Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Micromachined thin film bulk acoustic resonators

Abstract: We have fabricated thin film bulk acoustic resonators (FBARS) with measured Q's of over 1000 and resonant frequencies as low as 1.5 GHz and as high as 7.5 GHz. The device, as currently fabricated, consists of the piezoelectric material aluminum nitride (AlN) sandwiched between electrodes all of which lie on a thin low-stress silicon nitride (Si/sub x/N/sub y/) membrane. Integrated on the membrane are small microheaters for frequency tuning and/or temperature stabilization. We have observed frequency shifts of 50 to 80 ppm per degree C depending on relative material thicknesses. Maximum temperature excursions over 580 C could be achieved using the microheaters. We have also observed frequency shifts of 5 to 10 ppm per volt depending on harmonic. >

Barrier materials for display devices

Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm−3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.

Wafer flood polishing

Abstract: In a chem-mech polishing process for planarizing insulators such as silicon oxide and silicon nitride, a pool of slurry is utilized at a temperature between 85° F.-95° F. The slurry particulates (e.g. silica) have a hardness commensurate to the hardness of the insulator to be polished. Under these conditions, wafers can be polished at a high degree of uniformity more economically (by increasing pad lifetime), without introducing areas of locally incomplete polishing.

Selective electroless copper for VLSI interconnection

Abstract: Cu is studied as a candidate for low-resistance VLSI interconnection. Simulation studies show that for effective channel length less than 0.5 mu m, the RC time constant of interconnection is a major part of the total delay. By reducing the resistivity of the interconnect, the operating speed can be increased by more than 20% without any change in design rule. A selective electroless deposition process was used to solve the Cu patterning difficulty. Patterns of 2.2- mu m pitch have been achieved with this process. The copper contamination issue is also studied; dielectric films such as silicon oxynitride and silicon nitride are shown to be effective in stopping Cu diffusion. By coating a thin Ni film on Cu, Cu corrosion can be reduced from 0.2 mu /h to less than 0.05 mu m/h at 100 degrees C in 4% KCL solution. >