Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: In this paper, the amplitude method was used to measure the thermal conductivity and diffusivity of free standing silicon nitride (Si•N) films of 0.6 and 1.4 μm in thickness.
Abstract: The thermal conductivity and diffusivity of free‐standing silicon nitride (Si‐N) films of 0.6 and 1.4 μm in thickness are measured. A new experimental technique, the amplitude method, is proposed and applied to measurement of the thin‐film thermal diffusivity. The thermal diffusivity is determined by three independent experimental approaches: the phase‐shift method, the amplitude method, and the heat‐pulse method. Good agreement among the measured thermal diffusivities obtained by the three methods indicates the validity of the amplitude method. High‐resolution electron microscopy studies show a large quantity of voids in the 1.4 μm Si‐N films. In contrast, very few voids are found in the 0.6 μm films. This difference may be responsible for the measured lower conductivity of the 1.4 μm Si‐N films as compared to the 0.6 μm thin films.
155 citations
TL;DR: In this article, the authors evaluated the wear properties of different types of ceramics (silicon nitride, silicon carbide, alumina and zirconia) for the case of oscillating sliding motion at room temperature.
154 citations
Patent•
22 Dec 2011TL;DR: A trench embedding method includes forming an oxidization barrier film on a trench, forming an expandable film on the oxidisation barrier film, embedding an embedding material that contracts by being fired on the trench, and firing the embedding materials as mentioned in this paper.
Abstract: A trench embedding method includes forming an oxidization barrier film on a trench; forming an expandable film on the oxidization barrier film; embedding an embedding material that contracts by being fired on the trench; and firing the embedding material, wherein the forming of the oxidization barrier film includes: forming a first seed layer on the trench by supplying an aminosilane-based gas; and forming a silicon nitride film on the first seed layer, wherein the forming of the expandable film includes: forming a second seed layer on the silicon nitride film by supplying an aminosilane-based gas; and forming a silicon film on the second seed layer.
154 citations
TL;DR: In this article, the results of a series of mutually related experiments are given about surface passivation with direct Plasma Enhanced Chemical Vapour Deposition (PECVD) of silicon oxide (Sioxide) and silicon nitride (Si-nitride), combined with harmonically modulated microwave reflection experiments are combined with Capacitance-Voltage measurements on Metal-Insulator-Silicon structures (CV-MIS), accelerated degradation tests and with Secondary Ion Mass Spectrometry (SIMS) and Elastic Recoil Detection (ERD) measurements of hydrogen and deuterium
154 citations
Patent•
18 Jul 2005TL;DR: In this article, it was shown that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet-layer uniformity of a-SiNx:H films.
Abstract: We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface off a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4 / NH3 / N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
154 citations