Silicon nitride

About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.

Fabrication and Secondary‐Phase Crystallization of Rare‐Earth Disilicate–Silicon Nitride Ceramics

Abstract: The fabrication and intergranular-phase devitrification of silicon nitride densified with rare-earth (RE) oxide additives has been investigated. The additions of the oxides of Sm, Gd, Dy, Er, and Yb, having high melting points and behaving similarly to Y2O3, were compositionally controlled to tailor a microstructure with a crystalline secondary phase of RE2Si2O7. The lanthanide oxides were found to be as effective as Y2O3 in densifying Si3N4, resulting in identical microstructures and densities of 98–99% of theoretical density. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a thin residual amorphous film which was observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification.

Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same

Abstract: The present invention discloses a novel insulating layer for use in semiconductor devices, the insulating layer having a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin films, each of a controlled, desired thickness, together with methods for forming the same The insulating layer of the present invention has a multi-layer nanolaminate structure consisting of alternating boron nitride thin films and silicon nitride thin filmsformed by the steps of: (a) depositing a silicon nitride thin film on a wafer, (b) depositing a boron nitride thin film on the silicon nitride thin film, and (c) forming the multi-layer nanolaminate thin film by alternately repeating steps (a) and (b)

Post-Deposition Treatment Methods For Silicon Nitride

Abstract: Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.

Preparation of metal silicon nitride films via cyclic deposition

Abstract: This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2 mH4-n-m (n=1,2; m=0,1,2; n+m=<3); and (R3 2N—NH)xSiR4 yH4-x-y (x=1,2; y=0,1,2; x+y=<3) wherein in the above formula R1-4 are same or different and independently selected from the group consisting of alkyl, vinyl, allyl, phenyl, cyclic alkyl, fluoroalkyl, silylalkyls.