Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: Amorphous specimens of silicon carbide, silicon nitride and germanium carbide have been prepared by decomposition of suitable gaseous mixtures in a r.f.c. glow discharge.
Abstract: Amorphous specimens of silicon carbide, silicon nitride and germanium carbide have been prepared by decomposition of suitable gaseous mixtures in a r.f. glow discharge. Substrates were held at a temperature T d between 400 and 800 K during deposition. In all three of the above materials the results of optical absorption and of d.c. conductivity measurements show a systematic variation with T d and with the volume ratio of the gases used. Electron microprobe results on silicon carbide specimens indicate that a wide range of film compositions can be prepared. The optical gap has a pronounced maximum at the composition Si00–32C0–68 where it is 2·8 eV for a sample deposited at T d = 500 K, but shifts to lower energies with increasing T d. The conductivity above about 400 K has a single activation energy approximately equal to half the optical gap and extended state conduction predominates if the silicon content exceeds 32%. If the latter is reduced, hopping transport takes over and it is suggested th...
411 citations
Patent•
20 Jun 2006TL;DR: In this paper, the UV photoexcitation process is used to remove native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films and increasing the excitation energy of precursors.
Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
404 citations
TL;DR: Friction and wear of Si3N4 sliding on itself were measured at room temperature in different gaseous and liquid environments as discussed by the authors, showing that wear occurs by two fracture mechanisms: within 1 μm of the surface, asperity contact produces very large local stresses and cracking on a very fine scale; 3-5 μm deeper the fracture follows weaknesses of the material and is intergranular fracture with some transgranular cleavage.
403 citations
TL;DR: In this article, the energy levels of defect states in amorphous silicon nitride have been calculated and the results are used to identify the nature of trap states responsible for charge trapping during transport and the charge storage leading to memory action.
Abstract: The energy levels of defect states in amorphous silicon nitride have been calculated and the results are used to identify the nature of trap states responsible for charge trapping during transport and the charge storage leading to memory action. We argue that the Si dangling bond is the memory trap in chemical vapor deposited memory devices and is also the center in plasma‐deposited nitride responsible for hopping at low electric fields and for charge‐trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors.
402 citations
13 Apr 2000
TL;DR: In this article, the authors present a structural and physicochemical analysis of ultrahard materials, including carbon and carbonitrides, based on the CO 2 -Laser Heating Technique in a diamond cell.
Abstract: Introduction: Novel Ultrahard Materials (A. Zerr & R. Riedel) STRUCTURES AND PROPERTIES Structural Chemistry of Hard Materials (W. Jeitschko, et al.) Phase Transitions and Material Synthesis using the CO 2 -Laser Heating Technique in a Diamond Cell (A. Zerr, et al.) Mechanical Properties and their Relation to Microstructure (D. Sherman & D. Brandon) Nanostructured Superhard Materials (S. Veprek) Corrosion of Hard Materials (K. Nickel & Y. Gogotsi) Interrelations Between the Influences of Indentation Size, Surface State, Grain Size, Grain-Boundary Deformation, and Temperature on the Hardness of Ceramics (A. Krell) Transition Metal Carbides, Nitrides, and Carbonitrides (W. Lengauer) New Superhard Materials: Carbon and Silicon Nitrides (J. Lowther) Effective Doping in Novel sp 2 Bonded Carbon Allotropes (G. Jungnickel, et al.) SYNTHESIS AND PROCESSING Directed Metal Oxidation (V. Jayaram & D. Brandon) Self-Propagating High-Temperature Synthesis of Hard Materials (Z. Munir & U. Anselmi-Tamburini) Hydrothermal Synthesis of Diamond (K. Nickel, et al.) Chemical Vapor Deposition of Diamond Films (C.-P. Klages) Vapor Phase Deposition of Cubic Boron Nitride Films (K. Bewilogua & F. Richter) Polymer to Ceramic Transformation: Processing of Ceramic Bodies and Thin Films (G. Soraru & P. Colombo) MATERIALS AND APPLICATIONS Diamond Materials and their Applications (R. Caveney) Applications of Diamond Synthesized by Chemical Vapor Deposition (R. Sussmann) Diamond-like Carbon Films (C.-P. Klages & K. Bewilogua) Ceramics Based on Alumina: Increasing the Hardness for Tool Applications (A. Krell) Silicon Carbide Based Hard Materials (K. Schwetz) Silicon Nitride Based Hard Materials (M. Herrmann, et al.) Boride-Based Hard Materials (R. Telle, et al.) The Hardness of Tungsten Carbide-Cobalt Hardmetal (S. Luyckx) Data Collection of Properties of Hard Materials (G. Berg, et al.) Index
401 citations