Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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TL;DR: A review article on active metal/ceramic joining is subdivided into the description of research activities in the fields of active metal brazing and diffusion bonding published in the last decade as discussed by the authors.
Abstract: This review article on metal/ceramic joining is subdivided into the description of research activities in the fields of active metal brazing and diffusion bonding published in the last decade. Informations are given on active metal brazing of oxide, nitride, and carbide ceramics and on diffusion bonding of alumina, zirconia, magnesia, silicon nitride, aluminum nitride and silicon carbide ceramics to metals. Ultra high vacuum diffusion bonding and experiments using the model combination Nb/alumina are also regarded. Emphasis is laid on a concise reproduction of experimental data concerning the bonding conditions and the determintion of bond strength. The review demonstrates that much effort was devoted to studies on the formatin of interfacial reaction layers and on the efficiency of interlayers additonally introduced between the ceramic and the metal part to reduce internal stresses caused by thermal expansion misfit of the materials to be bonded.
128 citations
Patent•
20 Dec 2011TL;DR: In this paper, the authors describe a method for fabricating micro-scale or nanoscale polymer or metal structures on a substrate by photolithography and/or nano imprinting lithography.
Abstract: Devices, systems and techniques are described for producing and implementing articles and materials having nanoscale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography.
128 citations
TL;DR: In this paper, the effect of Si 3 N 4 doping on the suppression of the crystallization of chalcogenide glasses was confirmed for all three systems and attributed to the increased crosslinking upon substitution of the chal cogens by nitrogen atoms, presumably forming structural units that are similar to Ge 3 n 4.
Abstract: Glasses in the Ge-S, Ge-As-Se, and Ge-As-Se-Te systems, doped with Si 3 N 4 , were melted after sealing under reduced pressure, and their crystallization behavior was examined using differential thermal analysis/differential scanning calorimetry and X-ray diffractometry. The effect of Si 3 N 4 doping on the suppression of the crystallization of chalcogenide glasses was confirmed for all three systems and is attributed to the increased crosslinking upon substitution of the chalcogens by nitrogen atoms, presumably forming structural units that are similar to Ge 3 N 4 .
127 citations
TL;DR: In this article, a dual-metal gate complementary metal oxide semiconductor (CMOS) technology using titanium (Ti) and molybdenum (Mo) as the gate electrodes for the N-metal oxide field effect transistors (N-MOSFETs) was presented.
Abstract: We report the first demonstration of a dual-metal gate complementary metal oxide semiconductor (CMOS) technology using titanium (Ti) and molybdenum (Mo) as the gate electrodes for the N-metal oxide semiconductor field effect transistors (N-MOSFETs) and P-metal oxide semiconductor field effect transistors (P-MOSFETs), respectively. The gate dielectric stack consists of a silicon oxy-nitride interfacial layer and a silicon nitride (Si/sub 3/N/sub 4/) dielectric layer formed by a rapid-thermal chemical vapor deposition (RTCVD) process. C-V characteristics show negligible gate depletion. Carrier mobilities comparable to that predicted by the universal mobility model for silicon dioxide (SiO/sub 2/) are observed.
127 citations
TL;DR: In this paper, the influence of catalyst film thickness on carbon nanostructures grown by plasma-enhanced chemical-vapor deposition from acetylene and ammonia mixtures was investigated.
Abstract: A systematic study is presented of the influence of catalyst film thickness on carbon nanostructures grown by plasma-enhanced chemical-vapor deposition from acetylene and ammonia mixtures We show that reducing the Fe∕Co catalyst film thickness below 3nm causes a transition from larger diameter (>40nm), bamboolike carbon nanofibers to small diameter (∼5nm) multiwalled nanotubes with two to five walls This is accompanied by a more than 50 times faster growth rate and a faster catalyst poisoning Thin Ni catalyst films only trigger such a growth transition when pretreated with an ammonia plasma We observe a limited correlation between this growth transition and the coarsening of the catalyst film before deposition For a growth temperature of ⩽550°C, all catalysts showed mainly a tip growth regime and a similar activity on untreated silicon, oxidized silicon, and silicon nitride support
127 citations