Topic
Silicon nitride
About: Silicon nitride is a research topic. Over the lifetime, 32678 publications have been published within this topic receiving 413599 citations. The topic is also known as: N₄Si₃.
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16 Jan 2012TL;DR: In this article, a method of forming a semiconductor device is disclosed, where Nitrogen layers of an IPD stack are deposited using silane and a nitrogen plasma to yield a nitride layer plasma treated through its entire thickness.
Abstract: A method of forming a semiconductor device is disclosed. Nitrogen layers of an IPD stack are deposited using silane and a nitrogen plasma to yield a nitride layer plasma treated through its entire thickness. In addition to nitriding the bottom nitride layer of the stack, the middle nitride layer may also be nitrided. Depositing silicon from silane in a nitrogen plasma may be accomplished using high density plasma, ALD, or remote plasma processes. Elevated temperature may be used during deposition to reduce residual hydrogen in the deposited layer.
121 citations
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TL;DR: In this paper, an epoxy/silicon nitride (Si3N4) nanowire composites were synthesized by the carbothermal reduction and nitridation of a homogeneous mixture of silica (SiO2), carbon, and a small amount of cobalt via the VLS mechanism.
Abstract: To improve the thermal conductivity of epoxy resins without losing the insulation, epoxy/silicon nitride (Si3N4) nanowire composites were produced. β-Si3N4 nanowires were synthesized by the carbothermal reduction and nitridation of a homogeneous mixture of silica (SiO2), carbon, and a small amount of cobalt via the vapor–liquid–solid (VLS) mechanism. The ratio of β to α phase in the product Si3N4 increased with heat-treatment temperature; however, the undesirable SiC also increased. By increasing the nitrogen gas pressure in the heat treatment, the ratio of β- to α-Si3N4 increased without producing SiC. The epoxy composite containing Si3N4 nanowires of 60 vol% showed a high thermal conductivity of 9.2 W m−1 K−1 along the preferred orientation of the nanowires.
121 citations
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31 Mar 2014TL;DR: In this article, the authors optimized the gas residence time during an excited species phase, where activated reactant is supplied such as from a plasma, to increase the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and reducing impurities in the layer.
Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.
120 citations
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TL;DR: In this article, the development of oxynitride glasses, the effects of nitrogen on properties and reports on the glassceramic heat treatments are reviewed and further improvements are possible if glass-ceramic processes using two-stage heat treatment are introduced.
Abstract: Silicon nitride-based ceramics contain oxynitride glass phases at the grain boundaries which can impair subsequent high temperature properties. Studies of bulk glasses in the Y-Si-Al-O-N system have been carried out and it has been shown that up to 10 atomic % N can be incorporated into these oxynitride glasses. Nitrogen increases the viscosity, hardness and glass transition temperature of the glasses. Heat treatments of Y-Si-Al-O-N glasses have been carried out and the crystalline phases formed are reported. Further improvements are possible if glass-ceramic processes using two-stage heat treatments are introduced. This paper reviews the development of oxynitride glasses, the effects of nitrogen on properties and reports on the glassceramic heat treatments.
120 citations
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TL;DR: It is found that the 1/f noise magnitude is very high for graphene nanopores: typically two orders of magnitude higher than for silicon nitride pores, which significantly lowers the signal-to-noise ratio in DNA translocation experiments and suggests that mechanical fluctuations may be the underlying cause of the high 1/F noise levels in monolayer graphene nanopore devices.
Abstract: Graphene nanopores are receiving great attention due to their atomically thin membranes and intrinsic electrical properties that appear greatly beneficial for biosensing and DNA sequencing. Here, we present an extensive study of the low-frequency 1/f noise in the ionic current through graphene nanopores and compare it to noise levels in silicon nitride pore currents. We find that the 1/f noise magnitude is very high for graphene nanopores: typically two orders of magnitude higher than for silicon nitride pores. This is a drawback as it significantly lowers the signal-to-noise ratio in DNA translocation experiments. We evaluate possible explanations for these exceptionally high noise levels in graphene pores. From examining the noise for pores of different diameters and at various salt concentrations, we find that in contrast to silicon nitride pores, the 1/f noise in graphene pores does not follow Hooge's relation. In addition, from studying the dependence on the buffer pH, we show that the increased noise cannot be explained by charge fluctuations of chemical groups on the pore rim. Finally, we compare single and bilayer graphene to few-layer and multi-layer graphene and boron nitride (h-BN), and we find that the noise reduces with layer thickness for both materials, which suggests that mechanical fluctuations may be the underlying cause of the high 1/f noise levels in monolayer graphene nanopore devices.
120 citations