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Showing papers on "Silicon on insulator published in 1971"


Patent
Rudolf Bauerlein1, Dieter Uhl1
14 Jul 1971
TL;DR: In this article, the radiation resistance of silicon transistors with a silicon oxide coating is improved by irradiating the semiconductor device with electrons at an energy below 150 keV and a dose between 109 and 1012 rad at the boundary layer between the silicon and silicon oxide.
Abstract: The radiation resistance of silicon transistors with a silicon oxide coating is improved by irradiating the semiconductor device with electrons at an energy below 150 keV and a dose between 109 and 1012 rad at the boundary layer between the silicon and silicon oxide coating. The temperature of the semiconductor device is maintained at a temperature of between 150 DEG and 450 DEG C during irradiation thereof.

10 citations


Journal ArticleDOI
TL;DR: In this paper, an earthed polycrystalline-silicon region is used as an electrostatic shield between metal and substrate for a silicon-gate m.o.s. integrated circuit.
Abstract: In a silicon-gate m.o.s. integrated circuit, because of the presence of the additional polycrystalline-silicon interconnection layer, it is possible virtually to eliminate parasitic thick-field transistor action at certain critical points in the circuit by employing an earthed polycrystalline-silicon region as an electrostatic shield between metal and substrate.

6 citations


Patent
J Dunkley1, B Smith1
18 Mar 1971
TL;DR: In this article, a method of producing a transistor and a resistor on a chip is disclosed in which the thickness of the layers of silicon dioxide over the base and collector areas and over the resistor areas are more nearly equal prior to the emitter-collector photoresist operation, whereby overetching is greatly reduced when the holes are etched through the silicon dioxide layers in the production of emitter and collector contacts.
Abstract: When transistors and resistors are provided on a chip or a wafer to become the electrical components of a digital or linear circuit, the emitter and collector regions must be etched simultaneously utilizing conventional photoresist techniques. In accordance with the prior art, the silicon dioxide layer over the area where the collector-contact is to be provided is substantially thicker than the silicon dioxide layer over the area where the emitter is to be provided, whereby the total time of etch must be great enough to etch the thicker silicon dioxide layer over the collector contacts, whereby the thinner layer is overetched, resulting in undercutting of the silicon dioxide layer in an umpredictable manner. The resulting emitters are larger in area than desired, resulting in a transistor having an emitter that is larger and therefore slower than is desired. A method of producing a transistor and a resistor on a chip is disclosed in which the thickness of the layers of silicon dioxide over the base and collector areas and over the resistor areas are more nearly equal prior to the emitter-collector photoresist operation, whereby overetching is greatly reduced when the holes are etched through the silicon dioxide layers in the production of the emitter and collector contacts. Furthermore, the silicon dioxide layer is grown, rather than being chemically deposited, since the grown silicon dioxide layer is denser, purer, and less likely to have pinholes therein than deposited silicon dioxide layers that have been used in the prior art.

5 citations


Journal ArticleDOI
01 Mar 1971
TL;DR: In this article, the authors developed procedures for the deposition of bothn-andp-type silicon on the same insulating substrate by a two-stage epitaxial process.
Abstract: Parasitic capacitances associated with large junction areas in bulk silicon MOS transistors can be virtually eliminated if MOS devices can be fabricated in silicon films on insulating substrates. The problem has been not only one of achieving suitable electrical properties in the thin films, but also of maintaining the “as-deposited” properties during the thermal treatments used in device processing. The changes in the electrical properties have made it particularly difficult to reproducibly fabricate deep depletion MOS devices, which require the deposition of thin films (less than 1.5μ) with carrier concentrations as low as ∼5 × 1014 per cu cm. Modifications in the film deposition procedures and in the pregrowth treatment of the substrate have enhanced the thermal stability of the electrical properties sufficiently for the fabrication of deep depletion MOS devices on 1.0 μ thick films. Procedures have also been developed for the deposition of bothn-andp-type silicon on the same insulating substrate by a “two-stage” epitaxial process. Thus, both components of the complementary pair circuit may be enhancement mode devices. Since relatively high carrier concentrations can be employed in the discreten andp-type films, the doping requirements and the processing of the device structures have been considerably eased. The deposition conditions and the ability to deposit high quality silicon on a substrate surface from which silicon has been previously removed are interrelated and are important considerations in performing the two-stage epitaxial process.

4 citations


Book ChapterDOI
TL;DR: In this article, the magnetic effect of the superconductive current from observed effects of the accelerating electrons, causing naturally the experienced changes of the electric field potential along the electric wire, was explained.
Abstract: This paper explains the magnetic effect of the superconductive current from the observed effects of the accelerating electrons, causing naturally the experienced changes of the electric field potential along the electric wire. The accelerating electrons explain not only the Maxwell Equations and the Special Relativity, but the Heisenberg Uncertainty Relation, the wave particle duality and the electron’s spin also, building the bridge between the Classical and Quantum Theories.

1 citations


Proceedings ArticleDOI
01 Sep 1971
TL;DR: In this article, the thermal silicon dioxide which is required for stable and controllable device characteristics must be protected by an outer, dense dielectric, such as phosphor-silicate glass and silicon nitride.
Abstract: Approaches to providing reliable semiconductor devices in non-hermetic packages has been reviewed and several conclusions are evident. First, the thermal silicon dioxide which is required for stable and controllable device characteristics must be protected by an outer, dense dielectric. Fortunately, both phosphor-silicate glass and silicon nitride are available for this purpose, and these are being used successfully.