Showing papers on "Silicon on insulator published in 1974"

Complementary MIS-type semiconductor devices and methods for manufacturing same

Abstract: An enhancement-type complementary MIS-type semiconductor is provided wherein the absolute value of the threshold voltage does not exceed 1.2 volts in both the P and N channels. The device is formed with either an N-type silicon single-crystal substrate having a specific resistance of more than 30 ohms-cm. and the crystal orientation characterized as ''''100,'''' or a silicon epitaxial substrate. The gate insulating film is formed from two layers, a silicon oxide film engaging the surface of the substrate and a silicon nitride film on the surface of said silicon oxide film. A vacuum evaporated film of aluminum defines the electroconductive electrodes of the device.

Rapid annealing in irradiated CMOS transistors

Abstract: Data characterizing the transient annealing of the gate threshold voltage of contemporary CMOS transistors following exposure to pulsed ionizing radiation are presented and discussed. Devices tested during the study include those fabricated on both bulk silicon and silicon-on-sapphire substrates. Silicon dioxide and aluminum oxide gate dielectrics are evaluated. Leakage current phenomena associated with charge formation in dielectric substrates or dielectric isolation layers are also considered.

Application of silicon crystal orientation and anisotropic effects to the control of charge spreading in devices

Abstract: Advantageous use of the silicon, diamond cubic crystal structure is described from the aspect of orientation-dependent etching. The use of this technology can affect device characteristics, device and circuit isolation, circuit element densities, and process control. Several laboratories have reported advantageous use of }100{ oriented silicon. This paper discusses the advantageous use of both {100} and {110} silicon orientations. In particular, the {110} technology is discussed from a high packing density aspect as applied to the processing and characteristics of silicon diode array targets with improved television blooming control.

Low-valent silicon

Abstract: II. Monovalent Silicon . . . . . . . . . . . . . . . . 4 A) General Considerat ions . . . . . . . . . . . . . 4 B) Sil l . . . . . . . . . . . . . . . . . . . . . 5 C) Si l l ÷ . . . . . . . . . . . . . . . . . . . 7 D) Si2 . . . . . . . . . . . . . . . . . . . . 7 E) S i C Compounds . . . . . . . . . . . . . . . 9 F) SiN and HNSi . . . . . . . . . . . . . . . . 10 G) SiO and SiO + . . . . . . . . . . . . . . . . 11 H) SiS, SiSe and SiTe . . . . . . . . . . . . . . . 13 I) SiF . . . . . . . . . . . . . . . . . . . . 14 K) SiCl, SiBr and SiI . . . . . . . . . . . . . . . 16 L) SiAu . . . . . . . . . . . . . . . . . . . 17

Silicon technology the new steel

Abstract: It has been said that the path to future industrial power resides in the domain of those nations which can demonstrate a virtuosity in the evolving silicon technology. Whether it be a “time computer” C/MOS chip to control the red dots on the face of a digital watch, or the logic controlling the time-division multiplex coding used to automate a complex railway system, silicon devices are becoming amazingly pervasive. Power devices control large engines, solar cells power satellites, transistors in radios have added untold dB to the noise spectrum of the modern city. One thing is used in common by all the previously mentioned devices — silicon technology.