Showing papers on "Silicon on insulator published in 1979"

Process for direct thermal nitridation of silicon semiconductor devices

Abstract: A process for the direct thermal nitridation of silicon semiconductor devices in which the semiconductor body is placed in an atmosphere of N2, at a temperature of less than 1000° C. The N2 is activated by an RF electrical field which ionizes the nitrogen, which then combines with the silicon surface.

Silicon-on-insulator m.o.s.f.e.t.s fabricated on laser-annealed polysilicon on SiO2

Abstract: N-channel-enhancement and light-depletion-mode m.o.s.f.e.t.s have been fabricated on laser-annealed 0.5 μm polysilicon films, deposited on 1 μm of SiO2 grown on single-crystal silicon substrates. Threshold voltages of 0.35–0.45 V and −0.5 – −0.7 V and surface mobilities of 170 cm2/Vs and 215 cm2/Vs were obtained on the enhancement and depletion devices, respectively. These results compare favourably with values realised in silicon-on-sapphire (s.o.s.) and bulk N-m.o.s. devices. In addition, the measured source-drain leakage currents match the best reported values for s.o.s. devices.

Monolithic distributed resistor-capacitor device utilizing polycrystalline semiconductor material

Abstract: A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics comprises a doped semiconductor body forming a substrate (10), an insulating layer (12) on a major surface of the substrate, and a doped polycrystalline semiconductor material (14) on the insulating layer. The polycrystalline layer (14) is the resistor and cooperates with the substrate as the capacitor. Fabrication of the device is compatible with integrated circuitfabri- cation and can be used with field-effect and bi-polar junction transistors. The body may comprise a single crystalline silicon substrate with the layer (12) comprising silicon oxide. The semiconductor material (14) may be polycrystalline silicon.

Semiconductor integrated circuit incorporating an active device and a distributed resistor-capacitor device

Abstract: A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics comprises a doped semiconductor body forming a substrate (108), an insulative layer (104) on a major surface of the substrate, and a doped polycrystalline semiconductor material (102) on the insulating layer. The polycrystalline layer (102) is the resistor and co-operates with the substrate as the capacitor. The device is incorporated in an integrated circuit together with a field- effect transistor (121) or a bipolar junction transistor. The body may comprise a single crystalline silicon substrate with the layer (104) comprising a silicon oxide. The semiconductor material (102) may be polycrystalline silicon.

MP-B6 a nonvolatile static RAM cell utilizing a silicon dioxide, thin silicon nitride layer-silicon dioxide gate insulator

Abstract: barriers at the semiconductor (such as Si)-wide energy bandgap insulator (such as SiOz) interface, few carriers of the opposite sign are injected. Therefore, the substrate Si-SiOz interface, for instance, can be used strictly for charge sensing (“read” operation) such as in a field-effect transistor (FET). Advantages of these structures over other nonvolatile semiconductor memory devices are mentioned. Experimental examples are given where various types of chemically vapor deposited (CVD) Si rich S i 0 2 films on SiOz give very large injected electron currents at low negative gate voltages. Electrically alterable read-only memory (EAROM) structures using a thin injecting layer of this material and a W charge storage layer in the SiOz are discussed.