Silicon on insulator

About: Silicon on insulator is a research topic. Over the lifetime, 19592 publications have been published within this topic receiving 302534 citations. The topic is also known as: SOI.

Short-channel effect in fully depleted SOI MOSFETs

Abstract: The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness. >

Silicon-based visible light-emitting devices integrated into microelectronic circuits

Abstract: MICROELECTRONIC device integration has progressed to the point where complete 'systems-on-a-chip' have been realized1–3. Now that optoelectronics is becoming increasingly important for information and communication technologies, there is a need to develop optoelectronic devices that can be integrated with standard microelectronics. Conventional semiconductor technology is largely based on crystalline silicon, which (being an indirect bandgap semiconductor) is an inefficient light-emitting material. This has stimulated significant effort towards developing silicon-based optoelectronic components and, of the several strategies explored so far4,5, the use of porous silicon appears the most promising; porous silicon produces high-efficiency, room-temperature, visible photoluminescence6, and its material and optical properties have been studied in detail7,8. But the extreme reactivity and fragility of porous silicon have hitherto prevented its integration with conventional silicon processing technology. We have recently shown9,10 that the thermal and chemical stability of porous silicon can be greatly enhanced — while retaining desirable light-emitting and charge-transport properties — by partial oxidation. Here we take advantage of these improvements in material properties to demonstrate the successful integration of silicon-based visible light-emitting devices into a standard bipolar microelectronic circuit.

Frontiers of silicon-on-insulator

Abstract: Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. After more than three decades of materials research and device studies, SOI wafers have entered into the mainstream of semiconductor electronics. SOI technology offers significant advantages in design, fabrication, and performance of many semiconductor circuits. It also improves prospects for extending Si devices into the nanometer region (<10 nm channel length). In this article, we discuss methods of forming SOI wafers, their physical properties, and the latest improvements in controlling the structure parameters. We also describe devices that take advantage of SOI, and consider their electrical characteristics.

Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology

Abstract: High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-semiconductor processing techniques, including deep ultraviolet lithography, was studied. It is concluded that this technology is capable of commercially manufacturing nanophotonic integrated circuits. The possibilities of photonic wires and photonic-crystal waveguides for photonic integration are compared. It is shown that, with similar fabrication techniques, photonic wires perform at least an order of magnitude better than photonic-crystal waveguides with respect to propagation losses. Measurements indicate propagation losses as low as 0.24 dB/mm for photonic wires but 7.5 dB/mm for photonic-crystal waveguides.

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

Abstract: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion. This original method of transistor operation offers excellent device performance, in particular great increases in subthreshold slope, transconductance, and drain current. A simulation program and experiments on SIMOX structures are used to study the new device.