Showing papers on "Silicon oxide published in 1972"

Formation of silicon oxide over gold layers on silicon substrates

Abstract: When a single‐crystal substrate of silicon is covered with evaporated gold and heated at relatively low temperatures (100–300°C) in an oxidizing atmosphere, a silicon‐dioxide layer is readily formed over the gold layer. The mechanism and factors controlling this low‐temperature oxide formation have been investigated using backscattering of 2‐MeV He+ ions. The oxide layer is nonuniform in thickness and the initial growth of this layer is proportional to (time)1/2. Both oxidizing ambient and orientation of the substrate influence the growth rate, and the amount of gold determines the final thickness of oxide. A model is proposed to explain the oxide‐growth mechanism.

Multilevel conductor structure and method

Abstract: The present invention relates to a multilevel conductor structure and to a method of insulating an upper level of conductors from a lower level of conductors on a silicon substrate of an integrated circuit. An undoped silicon oxide insulator layer and a doped silicon oxide insulator layer are successively placed on the lower level of conductors and the structure is heated to a temperature which is sufficient to cause the doped oxide insulator layer to soften and to flow above the lower conductors to produce tapered steps over the edges of the lower level of conductors. An upper level of conductor is then formed on the tapered doped silicon oxide insulator layer. The undoped silicon oxide insulator layer formed between the doped silicon oxide insulator layer and the lower level of conductors prevents doping atoms of the doped silicon oxide insulator layer from penetrating into source or drain regions of the silicon substrate which are usually in the vicinity of the lower level of conductors to change their conductivity.

Article having a hydrophilic colloid layer adhesively bonded to a hydrophobic polymer support

Abstract: An article is disclosed characterized by a hydrophobic polymer support and a supported portion having a surface comprising a hydrophilic colloid layer which is bonded to the support by an adhesive layer containing an inorganic oxide such as silicon oxide, aluminum oxide, magnesium oxide, tantalum oxide, titanium oxide, boron-silicon oxide, and mixtures thereof The article can be a photographic article including a radiation sensitive material such as silver halide

Solid diffusion sources containing phosphorus and silicon

Abstract: 1. A SOLID PHOSPHORUS CONTAINING SOURCE BODY FOR SEMICONDUCTOR DIFFUSION DOPING TREATMENT, SAID BODY COMPRISING ABOUT 5 TO ABOUT 70 WT. PERCENT OF COMPOUNDS OF PHOSPHORUS AND SILICON AND THE BALANCE SILICON CONTAINING ADDITIVES, WHEREIN THE COMPOUNDS OF PHOSPHORUS AND SILICON ARE SELECTED FROM THE GROUP CONSISTING OF COMPOSITIONS OF SIO2. P2O5, 2SIO2.P2O5, AND SIO2.2PO5, AND THE SILICON CONTAINING ADDITIVES ARE SELECTED FROM THE GROUP CONSISTING OF SILICON NITRIDE, SILICON OXIDE AND SILICON METAL.

Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods

Abstract: METHODS OF FORMING IMPURITY DOPED SILICON OXIDE LAYERS ON SEMICONDUCTOR SUBSTRATES BY FIRST FORMING A PAINT-ON COMPOSITION COMPRISING A SILOXANE AND A SOLUBLE IMPURITY COMPOUND, SUCH AS ALKOXIDES CONTAINING THE SUITABLE IMPURITIES SUCH AS B, P, AS AND SB. A SUBSTRATE COATED WITH THE PAINT-ON COMPOSITION IS HEAT-TREATED IN AN OXIDATIVE ATMOSPHERE IN ORDER TO CHANGE THE COATING TO A LAYER CONTAINING SILICON DIOXIDE DOPED WITH AN OXIDE OF ONE OR MORE OF THE IMPURITY ELEMENTS. A REACTIVE SILOXANE POLYMER OF A PARTICULAR STRUCTURE MAY BE ADDED TO THE PAINT-ON COMPOSITION TO IMPROVE ITS PERTINENT CHARACTERISTICS. THE IMPURITY OXIDE CONTAINED IN THE SILICON DIOXIDE SERVED AS A CONCENTRATED DEPANT SOURCE FOR DIFFUSION. THUS, IN THE INTERFACE LAYER BETWEEN SILICON AND THE MIXTURE OF THE IMPURITY OXIDE AND SILICON OXIDE THE SILICON REACTS WITH THE RESPECTIVE OXIDE TO FORM ELEMENTAL IMPURITIES AND SIO2. UNDER SILOXANES WE UNDERSTAND A CLASS OF COMPOUNDS DISTINGUISHED BY COVALENT LINKAGE OF SILICON-OXYGEN-SILICON WITH THE OTHER ELECTROVALENCE REQUIREMENTS SATISFIED BY ORGANIC AND/OR INORGANIC SUBSTITUENTS. THE TERM POLYSILOXANES REFERS TO MULTIPLE UNITS OF THE BASIC SILOXANE UNIT WHICH COMBINE TO FORM A BACKBONE STRUCTURE OF MOLECULES HAVING VARIOUS MOLECULAR WEIGHTS.

Conduction properties and microstructure of metal/SiO cermet thin films produced by recoil atom implantation

Abstract: Thin cermet type films have been prepared by the introduction of metal atoms into silicon oxide films by using recoil atom implantation techniques. This method of implantation has been found to be efficient for doping thin films of thickness ⩽ 500 A . As the metal concentration in the silicon oxide increases the resistivity changes slowly from that of a dielectric with an activated conduction process to that of a metal exhibiting a positive temperature co-efficient. Structure studies show that the metal atoms form clusters within the dielectric film, the size of the clusters increasing with increasing metal concentration. Under dc fields a single modified form of the Poole-Frenkel mechanism dominated the conduction.

Method for making an extremely thin silicon oxide film

Abstract: Gaseous oxygen vaporized from a liquid oxygen cooled by a refrigerant, such as liquid nitrogen, having a boiling point lower than that of liquid oxygen is guided into an oxidizing furnace along with an inert carrier gas so as to form an extremely thin oxide film on the surface of a silicon substrate which is placed in said oxidizing furnace and maintained at a relatively high temperature.

Precise Measurements of the Infrared Spectra near 9µm Obtained from RF-Sputtered Silicon Oxide (SiOX) Films

Abstract: Optical properties of RF-sputtered silicon oxide films is studied as a function of sputtering voltage, film thickness and heat treatment conditions. The wavelength of 9-µm absorption band becomes shorter with increasing sputtering voltage and film thickness for as-sputtered films, but this is not the case for films heat-treated above 700°C in Ar. This phenomenon can be explained by oxygen deficiency in the sputtered films, the degree of which is estimated at 6% after the heat-treatment.

An investigation of the stoichiometry and impurity content of thin silicon oxide films using Rutherford scattering of MeV α‐particles

Abstract: It is described how the Rutherford scattering of MeV α-particles may be used to study the stoichiometry and impurity content of thin silicon oxide films. The relative concentrations of silicon to oxygen can be measured to ≈ 5%, and in the most favourable cases, impurity concentrations as low as ≈1018 ions cm−3 can be measured. Es wird beschrieben, wie die Rutherfordstreuung von MeV-α-Teilchen zur Untersuchung der Stochiometrie und des Verunreinigungsgehalts von dunnen Siliziumoxidschichten benutzt werden kann. Die relativen Konzentrationen von Silizium zu Sauerstoff konnen bis auf ≈ 5% gemessen werden und in den gunstigsten Fallen lassen sich Storstellen-konzentrationen bis herab zu ≈1018 Ionen cm−3 messen.

Ceramic capacitor and method of forming same

Abstract: A ceramic capacitor is disclosed herein having ceramic layers formed of a composition of lead oxide, aluminum oxide, silicon oxide, barium oxide, and calcium oxide. Deposited on the ceramic layers are silver electrodes and the entire ceramic capacitor including the electrodes are fired at a temperature below 961*C which is below the melting temperature of the silver electrodes.

Electrode structure for a semiconductor device having a shallow junction and method for fabricating same

Abstract: A thermally stable semiconductor device is disclosed in which a thin aluminum film is formed over a silicon oxide film selectively formed on the silicon substrate. A layer of a metal such as tantalum, tungsten, or molybdenum that does not enter into an alloy reaction with silicon at heat treatment temperatures is formed over the thin aluminum film and is covered with a thick aluminum film. Oxides of the upper thick aluminum layer as well as oxides of the non-alloying metal and the lower aluminum layer are selectively formed in alignment with one another at locations where the electrodes are not formed.

Semiconductor device and the method of making the same

Abstract: A semiconductor device comprising a p type semiconductor substrate including an n channel depletion mode metal-oxide-semiconductor field effect transistor provided with a gate insulating double layer formed of a silicon oxide layer and a phosphosilicate glass layer and an n channel enhancement mode metal-oxide-semiconductor field effect transistor provided with a gate insulating double layer formed of a silicon oxide layer and an alumina layer, the portions of the semiconductor substrate other than those where the field effect transistors are formed being provided with a double layer of a silicon oxide layer and an alumina layer, or of an alumina layer and a phosphosilicate glass layer.

Backscattering Studies of Anodization of Aluminum Oxide and Silicon Nitride on Silicon

Abstract: Anodic oxidation of amorphous and polycrystalline aluminum oxides and amorphous silicon nitride deposited by chemical reactions on silicon were investigated by use of 2 MeV 4He + ion backscattering spectra and optical microscope examination. In anodization, the oxide layer was formed underneath the original aluminum oxide film and on the top surface of the silicon nitride layer. For a fixed current, the anodic voltage characteristics for aluminum oxide exhibited breakdown effects. After breakdown the aluminum oxide became nonuniform, and was removed at later stages of anodization, leaving a silicon oxide layer. For 700°C‐grown aluminum oxide, irregular surfaces were formed after all stages of anodization while for 830°C‐grown aluminum oxide, the oxide layer formed at later stages was similar in thickness and uniformity to those of anodically grown silicon oxide layers on bare silicon. The anodic voltage characteristics for silicon nitride did not exhibit breakdown. Backscattering data showed linear dependences on anodizing time of the decrease in amount of nitrogen and increase in amount of oxygen, suggesting that the nitrogen was replaced by oxygen during anodization. A similar mechanism was proposed by Schmidt and Wonsidler, and by Tripp.

Luminescent screen for flying-spot cathode-ray tube

Abstract: A luminescent screen of a mean film thickness of 20 to 50 mu to be provided on the inner surface of the face of a flying-spot cathode-ray tube, which is formed of a cerium-activated rare-earth silicate phosphor having a mean particle diameter of 15 mu or less prepared by calcining at least either one of yttrium oxide or gadolinium oxide, cerium oxide, silicon oxide, and 1 to 20 percent by weight of an alkali metal halide in air or under a reducing atmosphere at 900 DEG to 1,300 DEG C. When the luminous output from such a cathode-ray tube is utilized as an image signal after having been converted into an electric signal, it is possible to ensure a high signal-to-noise ratio between the signal and the noise from a photo-cathode in response to said luminous output incident to the photocathode.

Process of fabricating silicon photomask

Abstract: AN IMPROVED "SEE-THROUGH" PHOTOMASK OF SILICON PATTERNED ON GLASS IS PRODUCED BY THE LOW-TEMPERATURE DEPOSITION OF SILICON, FOLLOWED BY THE LOW-TEMPERATURE DEPOSITION OF SILICON NITRIDE OR SILICON OXIDE ON THE SILICON. THE NITRIDE OR OXIDE IS THEN PATTERNED BY SELECTIVE ETCHING FOR USE AS AN ETCH-RESISTANT MASK IN THE SELECTIVE ETCHING OF THE SILICON TO PRODUCE THE PHOTOMASK. PREFERABLY, THE NITRIDE OR OXIDE PATTERN IS LEFT ON THE SILICON PATTERN AS AN ANTI-REFLECTION COATING.

Compensation of fabry-perot surface defects. 2: silicon oxide compensating layers.

Abstract: The properties of a Fabry-Perot etalon, with surface defects compensated by irradiating a silicon oxide film, are computed for the case in which the initial surface defects function is rectangular. As a result of absorption, the compensating layer of silicon oxide must be deposited before the reflecting coating if the etalon is to be used at uv wavelengths. For visible wavelengths, the compensating layer may be a half-wave silicon oxide film deposited over the reflecting coating. An example is discussed in which the rms deviation from the mean thickness of an etalon is reduced from 2.37 nm to 0.80 nm. An automatic self-compensating process is proposed in which the radiation transmitted by an etalon may be used to produce an appropriate change in the thickness profile of a silicon oxide film.

Scanning electron microscopy of defects in dielectric films

Abstract: A technique of the local analysis of defects in silicon oxide thin films and the expansion of the defects in semiconducting crystalline substrates is given. The technique is based on the use of a scanning electron microscope (electron beam induced current and secondary electron emission modes of operation). It is shown that local junctions are formed at temperatures in the interval 450 to 560 °C as a result of interaction of Al and SiO2 defects. It is suggested that the degradation of electrical properties of planar structures is due to the high density of defects arising near steps formed at the boundary between the original oxide film and the thin oxide layer thermally re-grown in the photolithographic openings. [Russian Text Ignored]

Silicon Contamination in Vapor-Grown Gallium Arsenide

Abstract: An analysis of silicon distribution in epitaxial gallium arsenide layers grown by halide synthesis transport is made using an Electron Probe Micro Analyzer. High concentration of silicon is detected not only in the sample grown on silicon doped substrate but on tellurium doped substrate. When high concentration silicon is detected at the interface between epitaxial layer and substrate, the sample shows high resistivity region at the interface. It is found that inclusions of silicon exist in the form of elemental silicon and silicon oxide. It is also observed that Pyramid or hillock formation is caused by silicon contamination.

Electron tunneling into amorphous silicon

Abstract: Tunneling through an oxide barrier into amorphous silicon was investigated between liquid nitrogen and room temperatures. The tunneling junctions consisted of platinum, silicon oxide, and amorphous silicon in a sandwich configuration. The tunneling conductance, obtained by electronic differentiation, was found to be nearly symmetrical in bias voltage and to increase smoothly from zero bias. The observed temperature dependence of the tunneling conductance is interpreted in terms of localized states within a mobility gap. A mobility gap of approximately 1.6 eV and a density of localized states at the Fermi level of about 1020/eV·cm3 are inferred from the conductance data.

Dielectric isolation in semiconductor bodies

Abstract: 1,274,726. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 17 Dec., 1970 [6 Jan., 1970], No. 59908/70. Heading H1K. A method of forming a dielectrically isolated region in a semi-conductor body comprises bombarding the region with ions of at least one element, and subsequently heating the body to react the implanted ions with ions within the body to produce an isolation area surrounding the region. The body 10, which may be of silicon, is bombarded with ions of oxygen, nitrogen, carbon, or a combination thereof through a mask 12 having apertures 14 with bevelled edges 15 (Step 1). The energies of the ions, e.g. 1 to 3 Mev., produces a region 21 and a surrounding region 22 containing ions to a concentration of 10 18 to 10 22 /c.c., the region 22 being formed by a reduction in the penetration of the body caused by the bevelled mask edge 15 (Step 2). The body is heated, e.g. to 1100‹ C. for 30 mins, in order that the ions react with the body to form an isolating region 23 of silicon dioxide, silicon nitride, or silicon carbide (Step 3). Within the isolated region 26 may be formed transistors (Step 4) to produce an integrated circuit. The body may alternatively be of GaAs or Ge in which case silicon ions are included in the bombardment. The mask edge 15 may be formed from a mask having four layers, each of 500 to 1000 S thickness, each layer being bombarded with inert ions following deposition, the radiation dose increasing with each layer to produce a mask with a controlled, variable, etch rate. A control mask may determine the position of the apertures 14 during etching. The mask may be of gold, silver, molybdenum, tungsten, silicon dioxide or silicon nitride. Alternatively the mask may be pyrolitically deposited silicon oxide having a controlled, variable, etching rate provided by doping with boron or phosphorus. Alternatively the energy of the ions could be varied to produce the region 22 without the need of a bevelled edge mask.