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Showing papers on "Silicon oxide published in 1974"


Journal ArticleDOI
TL;DR: In this paper, the composition of anodically and thermally grown silicon oxide layers was determined by backscattering and channeling measurements with 2.0 −MeV 4He+ ions.
Abstract: The composition of anodically and thermally grown silicon oxide layers was determined by backscattering and channeling measurements with 2.0‐MeV 4He+ ions. The oxide thickness was determined by ellipsometry and, for anodic films, the silicon removal rate was also determined by layer removal measurements. The surface layer consists of stoichiometric silicon dioxide plus a silicon‐rich transition layer between the substrate and the silicon dioxide. The number of silicon atoms in this layer was found to be 6 × 1015 atoms/cm2 (about three atomic layers).

98 citations


Patent
22 Oct 1974
TL;DR: A method for the production, without thermal treatment, of an anti-reflection coating on surfaces of optical elements of transparent, thermally sensitive material such as organic polymeric plastic material which comprises coating the surface with a layer of silicon oxide by vaporizing said silicon oxide, by applying the energy of an electron beam under vacuum in such manner that the vaporized molecules are ionized by said beam and are deposited on said elements in ionized condition as discussed by the authors.
Abstract: A method for the production, without thermal treatment, of an anti-reflection coating on surfaces of optical elements of transparent, thermally sensitive material such as organic polymeric plastic material which comprises coating the surface with a layer of silicon oxide by vaporizing said silicon oxide by applying the energy of an electron beam thereto under vacuum in such manner that the vaporized molecules are ionized by said beam and are deposited on said elements in ionized condition. A multi-layer coating may then be applied by depositing with an increasing rate on said coating a layer of a substance of higher refractive index than that of said plastic material while continuing the deposition of the silicon oxide, and then depositing thereon a final layer of anti-reflection material such as silicon oxide. The substance of higher refractive index may an oxide of cerium, tantalum, titanium or zirconium.

56 citations


Patent
11 Sep 1974
TL;DR: In this article, a method for coating silicon oxide SiO film and silicon dioxide SiO2 film on the surface of transparent optical material of glass or syntheic resin whose refractive indices are varied by changing the condition of vapor-deposition is presented.
Abstract: A method for coating silicon oxide SiO film and silicon dioxide SiO2 film on the surface of transparent optical material of glass or syntheic resin whose refractive indices are varied by changing the condition of vapor-deposition, under a predetermined condition of vapor-deposition so as to form a firm and durable anti-reflection film.

35 citations


Patent
Howard F. Ellis1
06 May 1974
TL;DR: In this paper, a zinc oxide compound nonlinear resistance surge arrester disc is provided with a glass anti-flashover collar having a relatively low fusing temperature and relatively low coefficient of thermal expansion.
Abstract: A zinc oxide compound non-linear resistance surge arrester disc is provided with a glass anti-flashover collar having a relatively low fusing temperature and a relatively low coefficient of thermal expansion. The glass comprises the following constituents in proportion to one-another by weight: About 44.5% lead oxide, About 24.5% zinc oxide, About 20.5% boric oxide, About 4.5% silicon oxide, and About 6.0% cupric oxide.

30 citations


Patent
13 Mar 1974
TL;DR: In this paper, an enhancement-type complementary MIS-type semiconductor is provided wherein the absolute value of the threshold voltage does not exceed 1.2 volts in both the P and N channels.
Abstract: An enhancement-type complementary MIS-type semiconductor is provided wherein the absolute value of the threshold voltage does not exceed 1.2 volts in both the P and N channels. The device is formed with either an N-type silicon single-crystal substrate having a specific resistance of more than 30 ohms-cm. and the crystal orientation characterized as ''''100,'''' or a silicon epitaxial substrate. The gate insulating film is formed from two layers, a silicon oxide film engaging the surface of the substrate and a silicon nitride film on the surface of said silicon oxide film. A vacuum evaporated film of aluminum defines the electroconductive electrodes of the device.

21 citations


Patent
Herbert S Lehman1
13 Mar 1974
TL;DR: In this article, an oxidation resistant masking layer for a semiconductor body having a first layer of oxygenated silicon nitride material having a refractive index in the range of 1.60 to 1.85, and a second overlying layer of Si3N4 bonded to the first layer having a thickness of at least 100 Angstroms.
Abstract: An oxidation resistant masking layer for a semiconductor body having a first layer of oxygenated silicon nitride material having a refractive index in the range of 1.60 to 1.85, and a second overlying layer of Si3N4 bonded to the first layer having a thickness of at least 100 Angstroms. A process for forming recessed thermal SiO2 isolation regions in a silicon semiconductor body wherein a masking layer is deposited on the silicon body by depositing a blanket layer of oxygenated silicon nitride and an overlying blanket layer of Si3N4, forming openings in the resultant composite masking layer and etching grooves into the silicon semiconductor layer to the desired thickness thus defining the desired recessed isolation regions, and exposing the resultant structure to an oxidizing environment for a time sufficient to form the desired silicon oxide recessed regions.

21 citations


Patent
29 Aug 1974
TL;DR: In this paper, a thermally stable semiconductor device is disclosed in which a thin aluminum film is formed over a silicon oxide film selectively formed on the silicon substrate, and a layer of a metal such as tantalum, tungsten, or molybdenum that does not enter into an alloy reaction with silicon at heat treatment temperatures is covered with a thick aluminum film.
Abstract: A thermally stable semiconductor device is disclosed in which a thin aluminum film is formed over a silicon oxide film selectively formed on the silicon substrate. A layer of a metal such as tantalum, tungsten, or molybdenum that does not enter into an alloy reaction with silicon at heat treatment temperatures is formed over the thin aluminum film and is covered with a thick aluminum film. Oxides of the upper thick aluminum layer as well as oxides of the non-alloying metal and the lower aluminum layer are selectively formed in alignment with one another at locations where the electrodes are not formed.

20 citations


Patent
02 Jul 1974
TL;DR: In this paper, a self-aligning process for fabrication of integrated circuits utilizing ion implantation to effect doping is described, where a composed masking technique is used to define self-aligned areas in a silicon oxide layer for definition of isolation, base, resistor and collector contact regions.
Abstract: A self-aligning process for fabrication of integrated circuits utilizing ion implantation to effect doping. A composed masking technique is used to define self-aligned areas in a silicon oxide layer for definition of isolation, base, resistor and collector contact regions. Only two oxide removal steps are required for isolation through emitter process steps, and the process uses the silicon oxide layer and photoresist material for implantation masking. Formation of the emitter region by ion implantation and by diffusion are described.

20 citations


Patent
06 May 1974
TL;DR: In this article, the authors describe a process of construction of an Nchannel charge coupled device, which is a step-by-step series of operations which will produce on a P-type substrate of silicon a series of interposed spaced polysilicon gates and aluminum gates.
Abstract: This abstract describes a process of construction of an Nchannel charge coupled device. It provides a step-by-step series of operations which will produce on a P-type substrate of silicon a series of interposed spaced polysilicon gates and aluminum gates. The polysilicon gates are deposited on a thin silicon nitrade layer which is positioned on a thin silicon oxide layer, both of minimum thickness, so there is good capacitive coupling between the polysilicon and the silicon. A thick layer of silicon oxide is formed over the polysilicon gate, after which the nitride layer between the polysilicon gates is etched away. A silicon oxide layer is deposited in the space between the nitride areas and on top of that an aluminum gate is deposited. Conventional means are provided to attach conductor leads to the polysilicon gates. If desired Boron or other elements can be implanted in the silicon before the oxide and aluminum gates are deposited.

12 citations


Patent
30 Sep 1974
TL;DR: In this article, it is shown how to add silicon oxide in readily accessible form or by dissolving some elemental silicon, which can be used in the manufacture of semiconductor devices.
Abstract: Thinning plate-shaped bodies of silicon or germanium, adhered to a glass-plate by chemically etching in an etchant comprising hydrofluoric acid and at least one oxidant, in which, prior to said etching, the etchant is given a content of silicon. This silicon may be added in several forms, for instance as silicon oxide in readily accessible form or by dissolving some elemental silicon. It is further possible for a similar process to use an etchant comprising the above etchant after first use. The method may be used in the manufacture of semiconductor devices.

11 citations


Journal ArticleDOI
TL;DR: In this paper, the gold electrode migration on C-SiOx-Au devices has been found for temperatures above the Au/Si eutectic point, and approximate concentration profiles have been determined by means of Rutherford scattering.
Abstract: Rapid migration of the gold electrode on C–SiOx–Au devices has been found for temperatures above the Au/Si eutectic point. Approximate concentration profiles have been determined by means of Rutherford scattering. Electrical measurements have been performed on both virgin and diffused devices. Comment is made on the relevance of electrode migration to the forming process and bistable memory switching in metal‐insulator‐metal devices.


Journal ArticleDOI
TL;DR: In this article, the influence of the space charge effect caused by mobile ions on the potential distribution and hence on the electron current is described by an effective electric field, which is proportional to the applied voltage across the capacitor.

Patent
08 Jul 1974
TL;DR: In this paper, a unitary multilayer photoconductive element having a support bearing a conducting layer and a hydrophobic organic layer coated over the conducting layer is disclosed, which is a binderless layer containing an electrically conducting metal such as chromium intermixed with a protective inorganic oxide such as silicon oxide or silicon dioxide.
Abstract: A unitary multilayer photoconductive element having a support bearing a conducting layer and a hydrophobic organic photoconductive layer coated over the conducting layer is disclosed. The conducting layer is a binderless layer containing an electrically conducting metal such as chromium intermixed with a protective inorganic oxide such as silicon oxide or silicon dioxide.


Journal ArticleDOI
TL;DR: In this article, the authors show that the SiO stretching band absorption peak in the IR-Spektrum shifts from wave number 1055-1060 cm−1 to 1095 cm −1 for thermally grown silicon oxide films.
Abstract: Die Warmebehandlung anodischer Oxidschichten bewirkt die Verschiebung der Absorptionsminima von SiO-Bindungen im Infrarotspektrum von 1055–1060 cm−1 Wellenzahlwerte auf den fur thermische Oxide kennzeichnenden Wellenzahl-Wert 1095 cm−1. ahnliches Verhalten wird auch bei Lagerung an Zimmertemperatur beobachtet. Die Erscheinung kann mit der Umordnung der SiO-Bindungen erklart werden. Heat-treatment of anodic of silicon oxide films results in the shift of the SiO stretching band absorption peak in the IR-Spektrum from wave number 1055–1060 cm−1 to 1095 cm−1 characteristic for thermally grown silicon oxide films. Similar tendency can be observed by storage in atmosphere, too. This phenomenon can be explained by rearrangement of the SiO stretching bands.

Patent
03 Oct 1974
TL;DR: In this article, the formation of a monocrystalline layer of a semiconductive cpd is possible when a SiO2-film is first removed by heating the silicon substrate in an atmos.
Abstract: Heteroepitactic formation of a monocrystalline layer of a semiconductive cpd. (esp. GaP) on a silicon substrate is possible when a SiO2-film is first removed by heating the silicon substrate in an atmos. of purified H2 at 950-1100 degrees C. The substrate is then additionally contacted with a HCl-contg atmos. cooled to a temp. suitable for the deposition from the vapour phase (pref. 800-850 degrees C). GaP (opt. doped) is pref. used as a source of Ga and P. The growth of the GaP layer is very rapid. The method is esp. suitable for the prodn. of luminescent diodes.


Journal ArticleDOI
TL;DR: Kossel diffraction patterns have been utilized to measure the lattice strains caused by insulating films deposited on silicon crystals as discussed by the authors. But the results are limited to the case of silicon nitride films.
Abstract: Kossel diffraction patterns have been utilized to measure the lattice strains caused by insulating films deposited on silicon crystals. The enhanced X-ray diffraction intensity has been found at the locally strained regions of crystals. The local lattice strain causes also the shifting and the kinkings of the Kossel diffraction lines. The deviations from the normal positions of the patterns indicate the magnitude of the lattice strains. The distributions across the film edges appear along the Kossel patterns when the diffracted region is made to cross the film edges perpendicularly. The depth distributions can also be measured by using appropriate X-ray sources to vary the extinction distance. This method has been applied to measure the lattice strain in silicon crystals coated with silicon nitride films. The strain compensation brought about by underlying silicon oxide films has been observed.

Patent
21 Mar 1974
TL;DR: Aluminum oxide or calcium oxide is added to the tin slag, which contains a relatively high silica content along with a source of carbon, and the mixture is fused as discussed by the authors, which facilitates a more effective ultimate separation of the metal alloy.
Abstract: Aluminum oxide or calcium oxide is added to tin slag, which contains a relatively high silica content along with a source of carbon, and the mixture is fused. The added aluminum oxide or calcium oxide combines with the silicon oxide and other metallic compositions present to form a slag phase of a new compositiom which has a melting point 100* - 400* C. higher than the original slag composition. In the fusion the carbon reduces the tantalum and niobium and other oxides to the respective metals and the higher melting range of the new slag composition results in super heating of the metal alloy which facilitates a more effective ultimate separation of the metal alloy.