Showing papers on "Silicon oxide published in 1976"

Origin of Interface States and Oxide Charges Generated by Ionizing Radiation

Abstract: The randomly located trivalent silicon atoms are shown to account for the thermally generated interface states at the SiO2-Si interface. The interface state density is greatly reduced in water containing ambients at low temperatures (450°C) by forming trivalent silicon hydroxide bonds. Interface states are regenerated when the ?Si-OH bonds are broken by ionizing radiation and the OH ions are drifted away. In the bulk of the oxide film, the trivalent silicon and the interstitial oxygen donor centers are shown to be responsible for the heat and radiation generated positive space charge build-up (oxide charge) in thermally grown silicon oxide.

Abstract: Stoichiometry of SiO2/Si interfacial regions. I. Ultrathin oxide films

Abstract: Nonstoichiometric interfacial transition regions located between thermally grown silicon oxide films and silicon substrates have been identified by variation in silicon and oxygen x‐ray photoelectron spectral data.1 Changes in Si 2p binding energies, and line intensities and linewidths of both Si 2p and O 1s photoelectron lines are detected in spectra of oxide films less than 25‐A thick and are each consistent with a silicon‐rich transition region. The composition and width of the nonhomogeneous oxide transition regions in ultrathin, thermally grown silicon oxide films are quantitatively evaluated in the present study using Si 2p binding energy and intensity data.Homogeneous reference films are used to relate Si 2p binding energies with oxygen content of the films. The determination of a mean escape depth for Si 2p photoelectrons from oxide films provides a relationship between Si 2p line intensities and oxide film thickness. Changes in Si 2p binding energies and intensity data are used to identify change...

Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen

Abstract: The invention relates to a method of manufacturing a semiconductor device in which a surface of a silicon semiconductor region covered at least partly with a silicon oxide-containing layer is subjected to a nitridation treatment forming a buried zone of a nitrogen-containing material between the silicon oxide layer and the silicon region, which zone is used in a further phase of the manufacture or in the manufactured semiconductor device.

Silicon oxide coated metal having improved corrosion resistance

Abstract: The present invention provides a process for preparing silicon oxide layers on a substrate, and particularly on metal, having improved corrosion-protective properties. This is accomplished by making the silicon oxide protective layer hydrophobic, preferably by incorporating therein hydrophobic organosilicon residues. The protective layers are preferably prepared by vapor deposition in a vessel containing silicon and/or silicon oxides in the gasous form, oxygen, and a organosilicon compound containing at least one hydrophobic group bonded to the silicon.

Silicon oxide/silicon nitride mask with improved integrity for semiconductor fabrication

Abstract: A semiconductor dielectric layer formed of silicon nitride having a uniform dispersion of carbon therein for providing reduced intrinsic tensile stresses of less than 10 × 10 9 dyn/cm 2 .

Method of making integrated circuit MOS capacitor using implanted region to change threshold

Abstract: An MOS capacitor for N-channel silicon gate integrated circuits employs a polycrystalline silicon layer as one plate, and a silicon oxide dielectric. The lower plate consists of a region which is implanted by an ion beam to produce a depleted region. This device has a constant capacitance regardless of gate voltage in normal operating logic levels.

Synthetic taeniolite and process of producing the same

Abstract: This invention relates to a process of producing taeniolite having the formula, LiMg2 Li(X4 O10)F2 (wherein X represents Si or Ge), which comprises mixing (a) lithium compound selected from the group of lithium oxide and lithium fluoride, (b) magnesium compound selected from the group of magnesium fluoride and magnesium oxide and (c) silicon oxide (or germanium oxide) in such a manner that the mixing ratio of Li : Mg : Si : (or Ge) : F becomes 1 : 1 : 2 : 1 (the fluoride is included in an excess amount of 10 - 30% to compensate the loss of fluorine during the process); melting the mixture at about 1,250° C-1,450° C and slowly cooling until the melt crystallizes. This invention further relates to a water sol of flake-like ultra-fine particles of taeniolite produced in accordance with the above mentioned process, wherein each flake-like particle dispersed in water has a thickness of less than 150 A and a ratio of a diameter of the flat plane of the flake/the thickness of the flake being more than 100/1.

Method for diffusing an impurity into a semiconductor body

Abstract: A silicon oxide layer containing a group III element such as boron, aluminum or gallium is formed on a semiconductor substrate. The substrate is then heat treated at 600° C - 1200° C in a nitrogen atmosphere and a diffusion process carried out thereafter. In this manner, the impurity diffused surface of the semiconductor body is controlled to a low concentration not higher than 10 18 /cm 3 of the group III element. This is due to the fact that the silicon oxide layer containing the group III element (that is, the so-called doped oxide) is partly converted to a nitride in the course of an ammonia treatment resulting in an impurity source for the low concentration diffusion. The present method is useful in forming the base region of an NPN transistor, for example.

Tetrahydrofuran prodn - by catalytic gas phase dehydration of 1,4-butanediol

Abstract: Tetrahydrofuran (THF) is made by heating 1,4-butanediol in the gas phase in the presence of a hydration catalyst chosen from a zeolite, silicon oxide, aluminium oxide, silicon oxide-aluminium oxide, silicon oxide-magnesium oxide or an acid clay MEthod gives practically quantitative yields of THF, there is no corrosion problem as when using acid catalyst, and the catalyst is permanent and can be re-used The raw material is pref a mixt of 1,4-butanediol, 1,2-butanediol and 2-methyl-1,3-propanediol made from propylene, oxygen and a carboxylic acid The dehydration reaction is carried out eg at 125-300 degrees C esp 180-270 degrees C

Catalyst for the production of isoprene

Abstract: A solid catalyst comprising (1) silver ion, (2) aluminum oxide and (3) silicon oxide, which may further comprise, as the fourth ingredient(s), the oxide and/or ion of one or more of transition elements, alkaline earth metals, boron, thallium, tin, lead and phosphorus gives a high yield of isoprene in the reaction of isobutylene and formaldehdye and has a prolonged catalytic activity.

Method for the application of a spectral-selective coating on a plate

Abstract: The invention relates to a solar collector comprising a fluid reservoir provided with a metal plate with a spectral-selective coating, which is brought on to the plate by providing the plate at first with a black enamel layer, then, during the cooling period of the enamelling process, by providing it with a layer of indium oxide by spraying indium chloride against the enamel and then by providing the plate with a layer of silicon oxide by atomizing silicon chloride against the indium oxide.

Gate fabrication method for mnos memory devices

Abstract: An improved method for growing the silicon oxide memory insulator of an MNOS memory transistor is disclosed. The oxide is grown by passing a mixture of inert gas and anhydrous HCL over the substrate while the temperature is maintained within a predetermined range.

Evaluation of selected chemical processes for production of low-cost silicon

Abstract: Plant construction costs and manufacturing costs were estimated for the production of solar-grade silicon by the reduction of silicon tetrachloride in a fluidized bed of seed particles, and several modifications of the iodide process using either thermal decomposition on heated filaments (rods) or hydrogen reduction in a fluidized bed of seed particles. Energy consumption data for the zinc reduction process and each of the iodide process options are given and all appear to be acceptable from the standpoint of energy pay back. Information is presented on the experimental zinc reduction of SiCl4 and electrolytic recovery of zinc from ZnCl2. All of the experimental work performed thus far has supported the initial assumption as to technical feasibility of producing semiconductor silicon by the zinc reduction or iodide processes proposed. The results of a more thorough thermodynamic evaluation of the iodination of silicon oxide/carbon mixtures are presented which explain apparent inconsistencies in an earlier cursory examination of the system.

A method of forming a thin film by sputtering

Abstract: PURPOSE:A thin film having superior electrical, mechanical and potical characteristics and particularly high adhesion to substrates is formed by sputtering of silicon oxide or aluminum oxide.

Method for etching silicon

Abstract: A solution comprising fluoroboric acid, nitric acid and ammonium fluoroborate is an isotropic etchant for monocrystalline and polycrystalline silicon which can be used to etch patterns which are delineated by etching masks formed of positive photoresists, thermally grown silicon oxide or deposited silox.

Formation process of silicon oxide film

Abstract: PURPOSE:The formation process of silicon oxide film by the use of gas plasma treatment technique.

Element for the maltilayer constitution surface elastic wave

Abstract: PURPOSE:To make possible of the optional setting of a therminal coefficient with making an electric machine connection coefficient bigger then crystal, by selecting the thickness of a silicon layer and a zinc layer as suitable value, setting a silicon oxide layer, a comb type electrode, a pieza-electric zinc oxide film andametal thin film in turn on a base.

Method of manufacturing silicon integrated circuits utilizing selectively doped oxides

Abstract: A method of forming buried regions in a printed circuit substrate in which; a first layer of doped silicon oxide is deposited on the substrate, a pattern of apertures is produced in this layer and a second layer of differently doped silicon oxide is deposited to fill in apertures. The first layer silicon dioxide acts as a mask to the doping material so that when the two layers are subjected to a common diffusion step both doping materials are driven into the substrate, with the second layer doping material restricted to the regions of the apertures.

Method for manufacturing a semiconductor device and the same

Abstract: A method for manufacturing a PNP type planar transistor, diffusing an acceptor impurity in a non-oxidizing atmosphere to form a P type emitter region in one portion of an N type base region with a first silicon oxide film as a selective mask, depositing a second silicon oxide film from vapor phase on the surface of said emitter region, diffusing selectively a donor impurity in another portion of said base region with said first and second silicon oxide films as selective masks thereby to form an N type highly doped region in said base region.