Showing papers on "Silicon oxide published in 1978"

Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms

Abstract: Thermally deposited silicon films doped with oxygen atoms and used as passivation films on silicon devices have been studied with transmission electron microscopy, x‐ray diffraction, and ESCA. The films contain at least two phases, silicon microcrystals and silicon oxide. The size of the microcrystals in as‐deposited films was dependent both on the deposition temperature and on the oxygen concentration. Heat treatment caused crystal growth which depended mainly on the annealing temperature and weakly on the annealing time. The lattice constant of the microcrystals was directly related to their size. The silicon oxide phase in as‐deposited films was found to be SiO1.4. The results suggest ’’mosaic’’ model of the films which are amorphous when the diameter of the silicon microcrystals was less than 10 A.

Dry etching method

Abstract: A radio frequency and a static electric field are superposedly applied to a low pressure gas to generate a gaseous plasma and to drive ions of selected polarity in a predetermined direction. The processing chamber is pre-evacuated to a sufficiently high vacuum, and an etching gas is introduced into the chamber to be rendered to a low pressure at which the mean free path of the ions is sufficiently long. The pressure of the etching gas may range from the order of 10 -2 Torr to several Torr for etching silicon, using a silicon oxide as a mask material. This method improves the treating accuracy, especially minimizes the amount of side etch, as compared with the conventional plasma etching, and reduces the surface damage when compared with the known ion beam etching.

Method of depositing a silicon oxide dielectric layer

Abstract: This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, dielectric layer on a substrate by utilizing a glow discharge and a dielectric precursor having the formula ##STR1## wherein R1 is selected from the group consisting of H and --CH3, R2 and R3 are independently selected from the group consisting of H, --CH3, --OCH3 and --OC2 H5 and R4 is selected from the group consisting of --OCH3 and --OC2 H5.

Technique of growing thin silicon oxide films utilizing argon in the contact gas

Abstract: A particular embodiment involves the oxidation of hot monolithic silicon circuit substrates to grow thin silicon dioxide films (<500 A° thick) free of "nitrogenous micro-defects", using pre-oxidation and post-oxidation sequences where the Nitrogen content (as the atmosphere) is reduced, if not eliminated, to avoid problems created by such micro-defects, especially degradation of breakdown voltage across the oxide. N2 is preferably replaced by Argon which generates no such micro-defects.

Identification of oxide precipitates in annealed silicon crystals

Abstract: We have investigated the electron loss spectra of precipitates formed in annealed silicon crystals. The precipitates, as well as residue of the precipitates in precipitation sites, uniquely give rise to an energy loss at 532 eV. The energy loss is due to the excitation of oxygen 1s electrons. The precipitates are therefore identified as silicon oxide.

PNAF Etchant for aluminum and silicon

Abstract: A chemical etchant and a process for chemically etching thin films of aluminum, silicon, and aluminum-silicon alloy on composite structures which may be, for example, integrated circuit devices The etching process utilizes a mixture of phosphoric acid, nitric acid, acetic acid, a fluoroborate anion containing compound such as fluoroboric acid for providing fluoride ions, a surfactant, and water This PNAF etchant may be used in fabricating a wafer of integrated circuit devices without lifting photoresist maskant thereon The formulation provides relatively rapid dissolution of silicon as compared to its etch rates for silicon oxide and silicon nitride In addition, the etchant has been found suitable for relatively long term use in a production environment

Method of selective oxidation in manufacture of semiconductor devices

Abstract: A method of selectively enhancing the growth rate of silicon oxide in the manufacture of semiconductor devices results in a reduction in encroachment of oxide into the edges of areas masked by silicon nitride. Implanting an impurity material into the monocrystalline silicon surface, without annealling to correct implant damage, causes the surface to oxidize at lower temperatures and faster rates.

Thin-film microcircuits adapted for laser trimming

Abstract: Microcircuit structures including thin-film electrical components are provided with a multilayer passivation coating that permits laser trimming of the components through the coating without damaging it. Such a passivation coating suitably includes an underlayer of silicon oxide or other oxygen-containing material and an outer layer of silicon nitride.

MOS Devices having buried terminal zones under local oxide regions

Abstract: A method of making MOS devices, primarily in integrated circuit form, is disclosed. Device areas first are defined on a silicon semiconductor chip, typically by means of a silicon nitride pattern 13A-13B. This pattern then is used to locate impurity introductions and to define areas of semiconductor surface portion removal. The latter operation produces mesas 16-17 coincident with the device areas. By this combination of steps and silicon oxide regrowth 27 where silicon has been removed, well-defined conductivity type zones are formed under the silicon oxide portions to function as buried terminal zones 28, 29, 30 of MOS devices. In the sole critical mask registration step, one edge 38 of the gate electrode 31 is located relative to the boundary 39 of a buried terminal zone 28. Finally, the channel zone 34 and the other terminal zone 33 of an MOS transistor are emplaced by a self-alignment process, followed by a heating step which adjusts final device dimensions.

Vapor phase diffusion of aluminum with or without boron

Abstract: A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 1017 atoms/cm3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.

Enhanced bonding of silicon oxides and silver by intermediate coating of metal

Abstract: Interference filters having a vapor deposited layer of a silicon oxide adjacent to a vapor deposited layer of silver have adhesion between these layers improved by a very thin intermediate coating of chromium, nickel or an alloy containing about 90% chromium and nickel. Plastic articles having infrared reflecting interference filters with improved adhesion between layers, such as lenses and welding faceplates, are also disclosed.

Liquid crystal cell having an insulating layer of a silicon oxide base

Abstract: A liquid crystal cell having a pair of spaced carrier plates with inner surfaces forming a cavity for receiving a layer of liquid crystal material, each of said inner surfaces being provided with a conductive coating and at least one of the carrier plates having its conductive coating covered with an insulated layer of silicon oxide base characterized by the insulating layer containing an additive selected from a group consisting of boron oxide, tin oxide, titanium oxide and mixtures thereof so that the insulating layer causes homeotropic orientation of the molecules of the liquid crystal layer.

Mos type semiconductor device

Abstract: PURPOSE:To prevent the shortcircuit of a gate by extending a gate electrode onto a field section oxide film from the upper section of a gate silicon oxide film through an insulating film, which is formed on the boundary between the field section oxide film and the gate silicon oxide film and is thicker than the gate silicon oxide film but thinner than the field oxide film. CONSTITUTION:A metallic wiring 208 extending onto a gate silicon oxide film 203 does not pass on regions 210, 210' surrounded by dotted lines on a boundary section between a field section oxide film 209 and the gate silicon oxide film 203, passes on a drain region 202, and extends to the field section oxide film 209. An oxide film on the drain region 202 is generally thicker than the gate silicon oxide film 203. Accordingly, the problem of a shortcircuit in a gate is not generated because dielectric resistance in a section 211 where the metallic wiring 208 crosses in a section being in contact with the field section oxide film 209 is higher than that of gate silicon oxide film 203.

The negative role of the fast electrons in the microwave oxidation of silicon

Abstract: The influence of the fast electrons (up to approx. 100 eV), created in the magnetoactive oxygen plasma, with respect to the silicon oxide growth and oxide properties has been studied. The low values of the oxide dielectric strength and great density of the oxide defect charges have been found on damaged oxides. An upper energy limit (less than approx. 30 eV) has been introduced for the plasma electrons to prevent the oxide defects and extremal heating of the silicon sample during oxidation process.

DC-bias-dependent dielectric dispersion properties of evaporated silicon oxide films

Abstract: The measurements of low-frequency dielectric dispersion properties of evaporated silicon oxide films under high DC biasing voltage are reported. The results show that the total conductance consists of frequency-dependent and independent parts. The latter part agrees with the differential conductance derived from the DC I-V characteristics and it increases with increasing DC biasing voltage. The former part, which contributes to the relaxation phenomena, decreases with increasing DC biasing voltage. The results of the DC-bias-dependent relaxation phenomena are interpreted by using the two-site hopping model, which is consistent with the results of an electrically excited thermally stimulated current (ETSC) and an absorption current.

Method of continuously casting steel

Abstract: A method of continuously casting steel in an open-bottom mould, with an addition of aluminum to molten steel, as the latter enters the mould, includes the addition of a fluxing agent to the molten steel, as the latter enters the mould, to fluidize viscous slags and thereby to mitigate detrimental surface characteristics which would otherwise be produced in the steel, when cast, as a result of such slags. Preferably, the fluxing agent is a metal oxide, e.g. manganese oxide, silicon oxide, boron oxide or sodium oxide, or a mixture of metal oxides, provided as a coating on an aluminum wire, which wire may constitute the aluminum addition. The invention further includes a steel additive comprising such a coated aluminum wire.

Liquid crystal dispaly device

Abstract: PURPOSE:To make the gap between both glass plates even by forming the package of the liquid crystal display device by the use of a pair of glass plates deposited with silicon oxide films on the surfaces opposite from electrode forming surfaces CONSTITUTION:The package is formed by forming protecting films 6, 7 composed of silicon oxide films and transparent electrodes 8, 9 of specified patterns on a pair of glass plates 1, 2 respectively on the side in contact with liquid crystal, forming silicon oxide films 10, 11 of a film thickness larger than that of the abovementioned protecting films 6, 7 on the side opposite from the electrode forming surfaces and hermetically sealing the abovementioned glass plates 1, 2 at their periphery by means of a bonding agent 4 with micro inorganic materials 3 of granular form (linear form) being interposed therebetween Liquid crystal 5 is sealed therein to provide the liquid crystal display device In case the protecting films 6, 7 are not provided, the thickness of the silicon oxide films 10, 11 may be arbitrary

Plasma deposition device

Abstract: PURPOSE:To enhance a capacity for processing while reducing a time needed for electrode cleaning, wafers are placed on both electrodes in a capacity type plasma deposition device using parallel flat electrodes. CONSTITUTION:In a capacity type plasma deposition device, high-frequency voltage is applied to parallel flat type electrodes, and silicon nitride or silicon oxide, for example, is deposited on substrates such as silicon wafers 2. In such a case, the wafers 2 are placed on the elctrodes 1a, 1b and heaters 3 are installed outside the elecrodes. The electrodes may be further installed in multiple stages. In this system, all the electrodes are utilized for plasma deposition, resulting in an enhanced process efficiency and a reduced amount of reaction products deposited on the electrodes, thus decreasing the time needed for cleaning.

Impurity diffusion method

Abstract: PURPOSE:To obtain an emitter free from surface defects by introducing 8 to 20 mol% of arsenic in the form of oxide and 8 to 60 mol% of germanium oxide to a silicon oxide and using this as a diffusion source

Integrated circuit device

Abstract: PURPOSE:To increase the effect of a capacity, by a construction wherein a capacity of P-N junction is provided between an N-type region and a substrate electrode, in parallel with a capacity between an electrode and the N-type region, so that the capacity of P-N junction between the N-type region and a P-type region of high concentration is made to be the capacity of P-N junction. CONSTITUTION:A P-type region 102 is formed in a non-active region on the surface of a P-type silicon single crystal substrate 101, for instance, and a silicon oxide film 103 is made to grow therein. A silicon oxide film 104 is formed in an active region. A part of the active region is covered with a photoresist 105 which serves as a mask. Next, ions are implanted to form a P-type region 106 and an N-type region 107 on the surface of the substrate, and also an electrode 108 of a capacity element and a gate electrode 109 of MIST on the upper surface of the silicon oxide film 104. An N-type region 110 and an N-type region 111 serving as a digit line are formed on the surface of the substrate. The N-type region 110 is connected to the N-type region 107 in the output region of MIST. The N-type region 111 is the other output region of MIST. Thereafter an interlayer insulating film 112 is formed on the surface of the substrate. In addition, an electrode wiring 113 is led out, and a substrate electrode 114 giving a substrate bias is connected conductively thereto.

Production of aluminum chloride from clay using staged reactors

Abstract: Aluminum chloride is produced from clay containing aluminum oxide and silicon oxide by chlorinating clay in at least two stages with a mixture consisting of a chlorinating agent, a reducing agent, an alkali metal compound catalyst and silicon tetrachloride in which the proportions and amounts of the feed gases to each stage are separately regulated to suit the needs of the aluminum chloride production reaction in that stage. The effluent gases from the successive stages are collected and the silicon tetrachloride is separated from such gases and recycled back into the reactors to promote chlorination of the aluminum oxide in the clay while suppressing net chlorination of the silicon oxide fraction of the clay.

Flux for use in centrifugal casting of bimetallic pipes

Abstract: Disclosed is a flux intended for use in centrifugal casting of bimetallic pipes and comprising calcium oxide, silicon oxide, boron oxide, sodium oxide and sodium fluoride, said components being contained therein in the following amounts: Percent by weight CaO, the base SiO 2 : . . 7 to 10 B 2 O 3 . . . 10 to 12 Na 2 O . . . 18 to 24 NaF . . . 20 to 25

Infrared detector cell - with getter layer coating semiconductor substrate partly

Abstract: An infrared detector cell is designed on the basis of CdHgTe or PbSnTe semiconductors. The surface of the semiconductor body and/or the metal contacts covering it are partly coated with a getter layer. The pref. material for the latter is a silicon oxide, silicon nitride, polysilicon or a mixt. of them. Such an infrared detector cell is distinguished by a long life and a high sensitivity at very low temp. (77 degrees K).

Element for elastic surface wave

Abstract: PURPOSE:To improve various characteristics including temperature coefficient and electromechanical coupling coefficient, by confirming the optimum range for the film thickness of silicon oxide film coated on a substrate and for the Y axis rotational angle of the substrate.

Washing bath preventing adhesion of silicon oxide on steel plate

Abstract: PURPOSE:Washing bath, made so as not to adhere silicon oxideon the surface of steel plate, by adding one kind or both of metal ion blockading agent and protective colloid forming agent in alkaline washing bath, containing sodium silicate.