Showing papers on "Silicon oxide published in 2006"

Method for forming silicon-containing materials during a photoexcitation deposition process

Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

Protein-Resistant Polymer Coatings on Silicon Oxide by Surface-Initiated Atom Transfer Radical Polymerization

Abstract: The modification of silicon oxide with poly(ethylene glycol) to effectively eliminate protein adsorption has proven to be technically challenging. In this paper, we demonstrate that surface-initiated atom transfer radical polymerization (SI-ATRP) of oligo(ethylene glycol) methyl methacrylate (OEGMA) successfully produces polymer coatings on silicon oxide that have excellent protein resistance in a biological milieu. The level of serum adsorption on these coatings is below the detection limit of ellipsometry. We also demonstrate a new soft lithography method via which SI-ATRP is integrated with microcontact printing to create micropatterns of poly(OEGMA) on glass that can spatially direct the adsorption of proteins on the bare regions of the substrate. This ensemble of methods will be useful in screening biological interactions where nonspecific binding must be suppressed to discern low probability binding events from a complex mixture and to pattern anchorage-dependent cells on glass and silicon oxide.

Effects of adsorbed water layer structure on adhesion force of silicon oxide nanoasperity contact in humid ambient

Abstract: The origin of the large relative-humidity (RH) dependence of the adhesion force in the single-asperity contact between silicon oxide surfaces is elucidated. As RH increases, the adhesion force measured with an atomic force microscopy (AFM) initially increases, reaches a maximum, and then decreases at high RH. The capillary force alone cannot explain the observed magnitude of the RH dependence. The origin of the large RH dependence is due to the presence of an icelike structured water adsorbed at the silicon oxide surface at room temperature. A solid-adsorbate-solid model is developed calculating the contributions from capillary forces, van der Waals interactions, and the rupture of an ice-ice bridge at the center of the contact region. This model illustrates how the structure, thickness, and viscoelastic behavior of the adsorbed water layer influence the adhesion force of the silicon oxide nanoasperity contact.

Uniform batch film deposition process and films so produced

Abstract: A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant. A process for forming such a batch of wafer substrates involves feeding the precursor into a reactor containing a batch of wafer substrates and reacting the precursor at a wafer substrate temperature, total pressure, and precursor flow rate sufficient to create such a layer of material. The delivery of a precursor and co-reactant as needed through vertical tube injectors having multiple orifices with at least one orifice in registry with each of the batch of wafer substrates and exit slits within the reactor to create flow across the surface of each of the wafer substrates in the batch provides the within- wafer and wafer-to-wafer uniformity.

Silicon Surface Morphologies after Femtosecond Laser Irradiation

Abstract: In this article, we present summaries of the evolution of surface morphology resulting from the irradiation of single-crystal silicon with femtosecond laser pulses. In the first section, we discuss the development of micrometer-sized cones on a silicon surface irradiated with hundreds of femtosecond laser pulses in the presence of sulfur hexafluoride and other gases. We propose a general formation mechanism for the surface spikes. In the second section, we discuss the formation of blisters or bubbles at the interface between a thermal silicon oxide and a silicon surface after irradiation with one or more femtosecond laser pulses. We discuss the physical mechanism for blister formation and its potential use as channels in microfluidic devices.

Method of forming silicon oxide containing films

Abstract: A method of forming a silicon oxide film, comprising the steps of: - providing a treatment substrate within a reaction chamber; - purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000C, - adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, - purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, - at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and - repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

Method of manufacturing charge storage device

Abstract: A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (Hf x Si y O z ) layer is formed. The silicon content is gradually changed throughout the duration of the Hf x Si y O z deposition process. The etching rate for the Hf x Si y O z layer in dilute hydrogen fluoride solution is dependent on the silicon content y in the Hf x Si y O z layer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.

Method of selective coverage of high aspect ratio structures with a conformal film

Abstract: Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area. The preferential application of the catalyst or catalyst precursor may occur either at the top of the gap, for example to form a sacrificial mask, or at the bottom of the gap to create a seamless and void-free gap fill.

Nano Si Cluster- SiO x ‐C Composite Material as High-Capacity Anode Material for Rechargeable Lithium Batteries

Abstract: Nanosilicon cluster-SiO x -C composites including nanosize Si particles were prepared by using the disproportionation of silicon mono-oxide and the polymerization of furfuryl alcohol. The applicability of nanosilicon composites as anode material for rechargeable lithium batteries was investigated on the basis of X-ray diffraction measurement, observation by transmission electron microscopy (TEM) and electrochemical studies. TEM analysis showed that Si clusters in the range of 2-10 nm were distributed homogeneously within silicon oxide phases. The nanosilicon composite anode had a large capacity of ca. 700 mAh/g and a long cycle life of >200 cycles. The improvement of cyclability is due to the nanosize Si particles and their uniform dispersion within the silicon oxide phase retained by the carbon matrix, which could effectively suppress the pulverizing of Si particles by the volume change during lithium insertion and extraction.

Oxidation of Nb–Si–Cr–Al in situ composites with Mo, Ti and Hf additions

Abstract: The effects of Mo, Ti and/or Hf additions on the isothermal oxidation behaviour of Nb–Si–Cr–Al-based in situ composites in static air at 800 °C and 1200 °C were studied for the as-cast and heat-treated materials. After heat treatment at 1500 °C, the microstructures of all the alloys consisted only of the niobium solid solution (Nb ss ) and Nb 5 Si 3 phases. The addition of Ti and the decrease of the Mo concentration to 2 at.% improved the oxidation resistance of the alloys at 800 °C dramatically. The Hf addition had no significant effect on the oxidation behaviour of Nb–24Ti–18Si–5Al–5Cr–2Mo–5Hf (at.%) at 800 °C. The oxidation resistance of the alloys was found to be sensitive to the volume fraction of Nb ss . The coarsening and the increase of the volume fraction of the Nb ss phase in the heat-treated alloys were mainly responsible for the degradation of their oxidation resistance. Preferential attack of the Nb ss phase was observed in all the alloys. Pesting oxidation behaviour was exhibited at 800 °C by the Nb–18Si–5Al–5Cr–5Mo (as-cast), Nb–24Ti–18Si–5Al–5Cr–5Mo (as-cast), Nb–24Ti–18Si–5Al–5Cr–2Mo (heat-treated) and Nb–24Ti–18Si–5Al–5Cr–2Mo–5Hf (heat-treated) alloys. Pesting of the alloys occurred due to a combination of the presence of elements that oxidised rapidly and the restricted deformation capability of the scales. Spallation of oxide scales during cooling was observed for the as-cast and heat-treated Nb–24Ti–18Si–5Al–5Cr–2Mo and Nb–24Ti–18Si–5Al–5Cr–2Mo–5Hf alloys at 1200 °C. In the diffusion zones formed in the alloys without Hf addition, the 5–3 silicide was not oxidised. The TiNbO 4 , TiNb 2 O 7 , Ti 2 Nb 10 O 29 and silicon oxide were present in the scales formed on the Nb–24Ti–18Si–5Al–5Cr–2Mo and Nb–24Ti–18Si–5Al–5Cr–2Mo–5Hf alloys at 1200 °C and Hf oxide was also present in the latter alloy. At 1200 °C, in the Ti containing alloys, large Ti oxide particles formed at the Nb ss and 5–3 silicide interface and fine Ti oxide particles formed inside the Nb ss . Needle-like Hf oxide formed inside the 5–3 silicide in the heat-treated Hf containing alloy, which resulted in the degradation of its oxidation resistance. No protective oxide scale was formed on any of the alloys studied in this work.

In-situ-etch-assisted HDP deposition

Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10 11 ions/cm 3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

Etching solution for silicon oxide method of manufacturing a semiconductor device using the same

Abstract: An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Synthesis and Properties of Single-Crystal FeSi Nanowires

Abstract: We report for the first time the chemical synthesis of free-standing single-crystal nanowires (NWs) of FeSi, the only transition-metal Kondo insulator and the host structure for ferromagnetic semiconductor FexCo1-xSi. Straight and smooth FeSi nanowires are produced on silicon substrates covered with a thin layer of silicon oxide through the decomposition of the single-source organometallic precursor trans-Fe(SiCl3)2(CO)4 in a simple chemical vapor deposition process. Unlike typical vapor−liquid−solid (VLS) NW growth, FeSi NWs form without the addition of metal catalysts, have no catalyst tips, and depend strongly on the surface employed. X-ray spectroscopy verifies the identity and the room-temperature metallic nature of FeSi NWs. Room-temperature electrical transport measurements using NW devices show an average resistivity of 210 μΩcm, similar to the value for bulk FeSi. Investigations into the low-temperature physical properties of the first one-dimensional Kondo insulator and the possible new NW growt...

Method for Thin Film Formation

Abstract: A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided. The method for thin film formation comprises generating plasma within a vacuum vessel to generate an active species (radical) and forming a silicon oxide film on a silicon substrate using this active species and a material gas, wherein, in addition to the material gas, a nitrogen atom-containing gas is introduced into the vacuum vessel in its film forming space where the active species (radical) and the material gas come into contact with each other for the first time and are reacted with each other to form a silicon film on the silicon substrate, and wherein the flow rate of the nitrogen atom-containing gas during the formation of the silicon oxide film on the silicon substrate is regulated so as to be the maximum value at least at the time of the start of formation of the silicon film on the silicon substrate.

Fabrication and functionalization of nanochannels by electron-beam-induced silicon oxide deposition.

Abstract: We report on the fabrication and electrical characterization of functionalized solid-state nanopores in low stress silicon nitride membranes. First, a pore of approximately 50 nm diameter was drilled using a focused ion beam technique, followed by the local deposition of silicon dioxide. A low-energy electron beam induced the decomposition of adsorbed tetraethyl orthosilicate resulting in site-selective functionalization of the nanopore by the formation of highly insulating silicon oxide. The deposition occurs monolayer by monolayer, which allows for control of the final diameter with subnanometer accuracy. Changes in the pore diameter could be monitored in real time by scanning electron microscopy. Recorded ion currents flowing through a single nanopore revealed asymmetry in the ion conduction properties with the sign of the applied potential. The low-frequency excess noise observed at negative voltage originated from stepwise conductance fluctuations of the open pore.

Switch mode power amplifier using fet with field plate extension

Abstract: Disclosed are a switch mode power amplifier and a field effect transistor especially suitable for use in a switch mode power amplifier. The transistor is preferably a compound high electron mobility transistor (HEMT) having a source terminal and a drain terminal with a gate terminal therebetween and positioned on a dielectric material. A field plate extends from the gate terminal over at least two layers of dielectric material towards the drain. The dielectric layers preferably comprise silicon oxide and silicon nitride. A third layer of silicon oxide can be provided with the layer of silicon nitride being positioned between layers of silicon oxide. Etch selectivity is utilized in etching recesses for the gate terminal.

Three-dimensional imaging of nonspherical silicon nanoparticles embedded in silicon oxide by plasmon tomography

Abstract: Silicon nanoparticles embedded in silica show promising optoelectronic properties, due to quantum confinement and/or radiative interface states that should correlate with the particles’ average size and shape. Here the authors report the combination of electron tomography with plasmon-filtered microscopy in order to reconstruct the three-dimensional morphology of silicon nanoparticles. They find that particles with complex morphologies and high surface to volume ratios are dominant, rather than the commonly assumed near-spherical structures. These results should affect quantum-confined excitons and the interface density of states. Their findings may help to explain the physical origin of the unusually broad photoluminescence bands and efficiencies.

Enhancing Electrochemical Performance of Silicon Film Anode by Vinylene Carbonate Electrolyte Additive

Abstract: The effect of vinylene carbonate (VC) as an electrolyte additive on the electrochemical performance of Si film anode is reported in this paper. The cycle performance and efficiency of Si film anode were enhanced significantly with the presence of VC in electrolyte. It was found that the SEI layer formed in VC-containing electrolyte was impermeable to electrolyte and its impedance remained almost invariant upon cycling. Moreover, silicon oxide was formed in solid electrolyte interface layer of Si film anode due to the reaction of lithiated silicon with permeated electrolyte in both VC-free and VC-containing electrolytes.

Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill

Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy

Abstract: Charge trapping properties of electrons and holes in ultrathin nitride-oxide-silicon (NOS) structures were quantitatively determined by variable-temperature electrostatic force microscopy (EFM). From charge retention characteristics obtained at temperatures between 250 and 370°C and assuming that the dominant charge decay mechanism is thermal emission followed by oxide tunneling, we find that there are considerable deep trap centers at the nitride-oxide interface. For electron, the interface trap energy and density were determined to be about 1.52eV and 1.46×1012cm−2, respectively. For hole, these are about 1.01eV and 1.08×1012cm−2, respectively. In addition, the capture cross section of electron can be extracted to be 4.8×10−16cm2. The qualitative and quantitative determination of charge trapping properties and possible charge decay mechanism reported in this work can be very useful for the characterization of oxide-nitride-silicon based charge storage devices.

Doped nitride film, doped oxide film and other doped films

Abstract: Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

Semiconductor device and manufacturing method thereof

Abstract: PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which is capable of enlarging the radius of curvature of a corner formed on the side surface of a connecting hole. SOLUTION: The manufacturing method of semiconductor device comprises a process for forming a mask film 50 on a silicon oxide film 8; a process for forming the upper parts 9a, 10a of the connecting holes on the silicon oxide film 8, by effecting wet etching of the silicon oxide film 8 employing the mask film 50 as a mask and etching liquid containing hydrogen fluoride and ammonium fluoride; a process for forming the remaining parts 9b, 10b of the connecting hole on the silicon oxide film 8 through dry etching of the silicon oxide film 8 employing the mask film 50 as a mask; and a process for removing the mask film 50. The concentration of ammonium fluoride contained in the etching liquid is not less than 15 wt% and not more than 25 wt%. COPYRIGHT: (C)2007,JPO&INPIT

Adhesion and friction studies of a nano-textured surface produced by spin coating of colloidal silica nanoparticle solution

Abstract: This paper presents the results of adhesion and friction studies on a nano-textured surface. The nano-textures were produced by spin coating colloidal silica nanoparticle solution on a flat silicon substrate. Surface morphology was characterized by environmental scanning electron microscopy (ESEM) and scanning probe microscopy (SPM). Adhesion and friction studies were conducted using a TriboIndenter employing diamond tips with 5 μm and 100 μm nominal radii of curvature. The results show that the adhesion forces and coefficients of friction of the nano-textured surface measured by the 100 μm tip were reduced up to 98 and 88%, respectively, compared to those of a baseline silicon oxide film surface.

Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD

Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10 11 ions/cm 3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

Method for manufacturing a semiconductor device

Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition

Abstract: Field effect induced luminescence has been achieved by alternate tunnel injection of electrons and holes into Si nanocrystals. The emitting device is a metal-oxide-semiconductor structure with a semitransparent polycrystalline Si contact ∼250nm thick and a silicon-rich silicon oxide layer of about 40nm deposited on a p-type Si substrate by plasma-enhanced chemical vapor deposition. The electroluminescence is optimized for a Si excess of 17% and annealing at 1250°C for 1h in nitrogen-rich atmosphere. The pulsed emission presents typical decay times of ∼5μs and external quantum efficiencies of ∼0.03%.