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Showing papers on "Silicon oxide published in 2012"


Journal ArticleDOI
TL;DR: It is shown that anodes consisting of an active silicon nanotube surrounded by an ion-permeable silicon oxide shell can cycle over 6,000 times in half cells while retaining more than 85% of their initial capacity.
Abstract: Although the performance of lithium ion-batteries continues to improve, their energy density and cycle life remain insufficient for applications in consumer electronics, transport and large-scale renewable energy storage. Silicon has a large charge storage capacity and this makes it an attractive anode material, but pulverization during cycling and an unstable solid-electrolyte interphase has limited the cycle life of silicon anodes to hundreds of cycles. Here, we show that anodes consisting of an active silicon nanotube surrounded by an ion-permeable silicon oxide shell can cycle over 6,000 times in half cells while retaining more than 85% of their initial capacity. The outer surface of the silicon nanotube is prevented from expansion by the oxide shell, and the expanding inner surface is not exposed to the electrolyte, resulting in a stable solid-electrolyte interphase. Batteries containing these double-walled silicon nanotube anodes exhibit charge capacities approximately eight times larger than conventional carbon anodes and charging rates of up to 20C (a rate of 1C corresponds to complete charge or discharge in one hour).

2,133 citations


Journal ArticleDOI
TL;DR: The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously, and allows conclusions to be drawn on the degree of amorphousness and roughness.
Abstract: The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54–14.29 μm (700–6500 cm−1). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

724 citations


Patent
09 Mar 2012
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
Abstract: A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

194 citations


Journal ArticleDOI
TL;DR: This work presents a route to fabricate highly transparent memory using SiO(x) as the active material and indium tin oxide or graphene as the electrodes, and two-terminal, nonvolatile resistive memory can be configured in crossbar arrays on glass or flexible transparent platforms.
Abstract: Flexible electronic devices are widely considered to have significant potential for a range of applications. Here the authors present a bendable and transparent memory based on graphene electrical contacts and silica as the memory element.

174 citations


Patent
26 Jul 2012
TL;DR: In this article, the authors suppress a void from occurring in a silicon oxide film formed in a spin-on-dielectric (SOD) method by annealing the polysilazane solution.
Abstract: PROBLEM TO BE SOLVED: To suppress a void from occurring in a silicon oxide film formed in a spin on dielectric (SOD) methodSOLUTION: A manufacturing method of a semiconductor device including a substrate, a groove-shaped region G formed on a surface of the substrate, and a silicon oxide film 8 buried in the groove-shaped region G comprises: a liner film formation step of forming a liner film 6 covering the surface of the substrate including the groove-shaped region G; a water-washing step of washing a surface of the liner film 6 in water; a moisture removal step of removing residual water after water washing; a coating step of coating the surface of the substrate with a polysilazane solution by spin coating; and a reforming step of reforming the polysilazane solution into the silicon oxide film 8 by annealing

172 citations


Patent
09 Mar 2012
TL;DR: In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.
Abstract: A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

170 citations


Patent
04 Apr 2012
TL;DR: In this paper, the authors described a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor, where the plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials.
Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials

161 citations


Journal ArticleDOI
TL;DR: In situ transmission electron microscopy images of the real-time formation and evolution of the filament in a silicon oxide resistive switch provide insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.
Abstract: The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence for the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.

155 citations


Patent
23 Aug 2012
TL;DR: In this article, a method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride.
Abstract: A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride The substrate having the double patterning features is provided to a process zone An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C

137 citations


Journal ArticleDOI
TL;DR: The optical and electrical properties of these mixed-phase nanomaterials can be tuned independently, allowing for advanced light management in high efficiency thin-film silicon solar cells and for band-gap tuning via quantum confinement in third-generation photovoltaics.
Abstract: Nanometer wide silicon filaments embedded in an amorphous silicon oxide matrix are grown at low temperatures over a large area. The optical and electrical properties of these mixed-phase nanomaterials can be tuned independently, allowing for advanced light management in high efficiency thin-film silicon solar cells and for band-gap tuning via quantum confinement in third-generation photovoltaics.

123 citations


Journal ArticleDOI
TL;DR: In this article, all-atom equilibrium molecular dynamics simulations were employed to investigate the structural and dynamical properties of interfacial water on the magnesium oxide surface, and the solid support was modeled utilizing two different formalisms, both based on the CLAYFF force field.
Abstract: All-atom equilibrium molecular dynamics simulations were employed to investigate the structural and dynamical properties of interfacial water on the magnesium oxide surface. The solid support was modeled utilizing two different formalisms, both based on the CLAYFF force field. In one case, the atoms in the MgO substrate are allowed to vibrate, whereas in the other they are maintained rigid. The properties of water within the thin film are assessed in terms of density profiles in the direction perpendicular to the substrate as well as along planes parallel to the substrate, in-plane radial distribution functions, density of hydrogen bonds, residence times in contact with the substrate, and orientation distribution of interfacial water molecules. The contact angle for a small droplet on various substrates (MgO, SiO2, Al2O3) was also calculated and compared with experimental observations. On MgO, the substrate in which the atoms are maintained fixed is the one that most closely reproduces experimental contac...

Patent
31 Aug 2012
TL;DR: In this article, a method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided, which is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide.
Abstract: A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

Patent
25 May 2012
TL;DR: In this paper, a method of forming a silicon oxide layer is described, which first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical component chemical vapor deposition (CVD).
Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

Journal ArticleDOI
30 May 2012-Wear
TL;DR: In this paper, the authors provide a better understanding of the tribology of silicon nitride, an engineering ceramic with many applications in the automotive and aerospace industry, and provide a working model based on the tribo-emission process of low-energy electrons during friction with generation of positively charged silicon sites and nitrogen free radicals.

Journal ArticleDOI
TL;DR: Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications.
Abstract: We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.

Patent
14 Mar 2012
TL;DR: In this paper, a light-reflective anisotropic conductive adhesive is used for the connection of a lightemitting element to a wiring board, which includes a thermosetting resin composition containing a silicone resin and a curing agent, conductive particles and lightreflective insulating particles; the silicone resin is a glycidyloxyalkyl-alicyclic alkyl modified organopolysiloxane.
Abstract: A light-reflective anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board includes a thermosetting resin composition containing a silicone resin and a curing agent, conductive particles and light-reflective insulating particles. The light-reflective insulating particle is at least one kind of inorganic particles selected from the group consisting of titanium oxide, boron nitride, zinc oxide, silicon oxide, and aluminum oxide. The silicone resin is a glycidyloxyalkyl-alicyclic alkyl-modified organopolysiloxane.

Journal ArticleDOI
TL;DR: The results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure-Si heterojunction structures.
Abstract: Deposition of nanostructures such as carbon nanotubes on Si wafers to make heterojunction structures is a promising route toward high efficiency solar cells with reduced cost. Here, we show a significant enhancement in the cell characteristics and power conversion efficiency by growing a silicon oxide layer at the interface between the nanotube film and Si substrate. The cell efficiency increases steadily from 0.5% without interfacial oxide to 8.8% with an optimal oxide thickness of about 1 nm. This systematic study reveals that formation of an oxide layer switches charge transport from thermionic emission to a mixture of thermionic emission and tunneling and improves overall diode properties, which are critical factors for tailoring the cell behavior. By controlled formation and removal of interfacial oxide, we demonstrate oscillation of the cell parameters between two extreme states, where the cell efficiency can be reversibly altered by a factor of 500. Our results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure–Si heterojunction structures.

Journal ArticleDOI
16 May 2012-Langmuir
TL;DR: It is demonstrated here that the humidity level during processing is the most important parameter controlling the reaction, and the degree of chemical reaction with the surface OH groups depends on the chemical potential of interfacial water molecules.
Abstract: Phosphonic acid monolayers are being considered as versatile surface modification agents due to their unique ability to attach to surfaces in different configurations, including mono-, bi-, or even tridentate arrangements. Tethering by aggregation and growth (T-BAG) of octadecylphosphonic acid (ODPA) on silicon oxide surfaces has proven to be a robust method to establish a strong chemical bond. However, it requires a long processing time (> 48 h) that is a substantial drawback for industrial applications. We demonstrate here that the humidity level during processing is the most important parameter controlling the reaction. Using in situ Fourier Transform Infrared Spectroscopy (FTIR), we first show that the initially physisorbed layer obtained upon immersion in ODPA is composed of well-ordered bilayers and only reacts with the SiO(2) surface at 140 °C. Importantly, we show that the presence of water at the interface (determined by the humidity level) greatly influences the reaction time and completion. In humid environments (relative humidity, RH > 40%), there is no reaction, while in dry environments (RH < 16%), the reaction is essentially instantaneous at 140 °C. Ab initio calculations and modeling confirm that the degree of chemical reaction with the surface OH groups depends on the chemical potential (i.e., concentration) of interfacial water molecules. These findings provide a workable modification of the traditional T-BAG method consistent with many industrial applications.

Journal ArticleDOI
TL;DR: It is demonstrated that hydroxyl groups on oxide-free silicon are more reactive than on silicon oxide, and suggested new directions to functionalize silicon for sensors, photovoltaic devices, and nanoelectronics are suggested.
Abstract: Chemical functionalization of semiconductor surfaces, particularly silicon oxide, has enabled many technologically important applications (e.g., sensing, photovoltaics, and catalysis). For such processes, hydroxyl groups terminating the oxide surface constitute the primary reaction sites. However, their reactivity is often poor, hindering technologically important processes, such as surface phosphonation requiring a lengthy postprocessing annealing step at 140 °C with poor control of the bonding geometry. Using a novel oxide-free surface featuring a well-defined nanopatterned OH coverage, we demonstrate that hydroxyl groups on oxide-free silicon are more reactive than on silicon oxide. On this model surface, we show that a perfectly ordered layer of monodentate phosphonic acid molecules is chemically grafted at room temperature, and explain why it remains completely stable in aqueous environments, in contrast to phosphonates grafted on silicon oxides. This fundamental understanding of chemical activity an...

Patent
23 Feb 2012
TL;DR: In this article, a silicon nitride film (a first insulating film) is formed so as to cover a plurality of gate electrodes 3b, and then an ozone tetraethylorthosilicate (TEOS) film and a plasma TEOS film are laminated in order.
Abstract: PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device.SOLUTION: A silicon nitride film (a first insulating film) 5 is formed so as to cover a plurality of gate electrodes 3b, and then an ozone tetraethylorthosilicate (TEOS) film (a first silicon oxide film) 6 and a plasma TEOS film (a second silicon oxide film) are laminated in order. After laminating the ozone TEOS film 6, the ozone TEOS film is polished by the CMP method using the silicon nitride film 5 as a CMP stopper film before laminating the plasma TEOS film. Therefore, uniform film thickness of the plasma TEOS film is obtained, and the reliability of a semiconductor device can be improved.

Journal ArticleDOI
TL;DR: In this paper, the formation of a silicon layer on a molybdenum (Mo) electrode at 850°C in a CaCl2 melt containing silicon oxide (SiO2) nanoparticles (NPs) was observed.

Journal ArticleDOI
TL;DR: In this paper, a pressure sensor with a 200 µm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized.
Abstract: A pressure sensor with a 200 µm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiNx) and silicon oxide (SiO2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 µm SiNx layer is considered to be an optimized design in terms of small initial central deflection (0.1 µm), relatively high sensitivity (0.6% psi−1) and good linearity within our measurement range.

Patent
01 Mar 2012
TL;DR: In this paper, the carbon nanofibers having a cone geometry are coated with a silicon layer and a protective silicon oxide layer and the resulting composite material is suitable for high-capacity electrodes in lithium ion batteries.
Abstract: Methods and devices for an anode formed from coated carbon nanofibers are provided. The carbon nanofibers having a cone geometry are coated with a silicon layer and a protective silicon oxide layer. The resulting composite material is suitable for high-capacity electrodes in lithium ion batteries. The electrodes incorporating the coated carbon nanofibers have improved rate capacity and decreased initial cycle irreversibility.

Journal ArticleDOI
04 May 2012-ACS Nano
TL;DR: Measure and control of nanoscale single-asperity friction is demonstrated by using cantilever probes featuring an in situ solid-state heater in contact with silicon oxide substrates and capillary condensation is observed to be a thermally activated process.
Abstract: We demonstrate measurement and control of nanoscale single-asperity friction by using cantilever probes featuring an in situ solid-state heater in contact with silicon oxide substrates. The heater temperature was varied between 25 and 790 °C. By using a low thermal conductivity sample, silicon oxide, we are able to vary tip temperatures over a broad range from 25 ± 2 to 255 ± 25 °C. In ambient atmosphere with ∼30% relative humidity, the control of friction forces was achieved through the formation of a capillary bridge whose characteristics exhibit a strong dependence on temperature and sliding speed. The capillary condensation is observed to be a thermally activated process, such that heating in ambient air caused friction to increase due to the capillary bridge nucleating and growing. Above tip temperatures of ∼100 ± 10 °C, friction decreased drastically, which we attribute to controllably evaporating water from the contact at the nanoscale. In contrast, in a dry nitrogen atmosphere, friction was not af...

Journal ArticleDOI
TL;DR: In this paper, the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, was studied based on the electrical resistance measurement of an aluminum single LFC point.
Abstract: In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c-Si and mc-Si solar cell fabrication: thermally grown silicon oxide (SiO2), deposited phosphorus-doped amorphous silicon carbide (a-SiCx/H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm2 have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.

Journal ArticleDOI
TL;DR: In this paper, the authors presented the study of thin silicon oxide film on silicon substrate with application of deep-UV Raman scattering, which reduced the penetration depth of the radiation into silicon substrate about 30 times.
Abstract: Raman spectroscopy is a powerful experimental technique for structural investigation of silicon based electronic devices such as metal‐oxide‐semiconductor-type structures. It is widely used for characterization of mechanical stress distribution in silicon substrate. However, in the case of Raman measurements of oxide layer on silicon substrate visible excitation makes this technique almost useless. The reason for this difficulty is two-phonon scattering from silicon substrate which masks the signal from oxide layer. Application of deep-ultraviolet (deep-UV) excitation reduces the penetration depth of the radiation into silicon substrate about 30 times. As a result, the simultaneous measurement of one-phonon scattering from silicon substrate and the Raman spectrum of the oxide layer become possible. This work presents the study of thin silicon oxide film on silicon substrate with application of deep-UV Raman scattering. The spectra measured for thin film are compared with reference spectra obtained for bulk material.

Journal ArticleDOI
TL;DR: In this paper, the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers on flat p-type wafers was reported.
Abstract: This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p-type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade-off between the open circuit voltage Voc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm2) was achieved with Voc = 664 mV, short circuit current Jsc = 35.7 mA/cm2 and FF = 78.0%. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Journal ArticleDOI
12 Nov 2012-ACS Nano
TL;DR: It is shown that both electronic transport and Raman characteristics change in a concerted manner as w shrinks and the charge transport mobility decreases with increasing top-down reactive ion etching.
Abstract: We demonstrate the fabrication and study of the structure–property relationships of large-area (>1 cm2) semiconducting nanoperforated (NP) graphene with tunable constriction width (w = 7.5–14 nm), derived from CVD graphene using block copolymer lithography. Size-tunable constrictions were created while minimizing unintentional doping by using a dual buffer layer pattern-transfer method. An easily removable polymeric layer was sandwiched between an overlying silicon oxide layer and the underlying graphene. Perforation-size was controlled by overetching holes in the oxide prior to pattern transfer into graphene while the polymer protected the graphene from harsh conditions during oxide etching and lift off. The processing materials were removed using relatively mild solvents yielding the clean isolation of NP graphene and thereby facilitating Raman and electrical characterization. We correlate the D to G ratio as a function of w and show three regimes depending on w relative to the characteristic Raman rela...

Journal ArticleDOI
TL;DR: A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale and exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and theossibility to expose the metal and the oxide interfaces by removing the top electrodes.
Abstract: A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.

Journal ArticleDOI
TL;DR: In this article, the authors successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology.
Abstract: In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.