Showing papers on "Silicon oxide published in 2021"
04 Jan 2021
TL;DR: Silicon oxide-based materials are promising anode materials for the real application in lithium-ion batteries as discussed by the authors. But the solid electrolyte interphase is vital for the cyclability and rate capability of t
Abstract: Silicon oxide-based materials are promising anode materials for the real application in lithium-ion batteries. The solid electrolyte interphase is vital for the cyclability and rate capability of t...
22 citations
TL;DR: The findings indicate that full exploitation of the comprehensive advantages of biomass materials is beneficial for alleviating the problems encountered in the development of energy-related technologies.
18 citations
TL;DR: In this article, a thin layer of graphene oxide (GOx) was shown to prevent Si surfaces from oxidation under ambient conditions for more than 30 days, and the protective GOx layer can be modified with molecules enabling a functional surface that allows for further chemical conjugation or connections with upper electrodes, while preserving the underneath Si in a nonoxidized form.
Abstract: The presence of a natural silicon oxide (SiOx) layer over the surface of silicon (Si) has been a roadblock for hybrid semiconductor and organic electronics technology. The presence of an insulating oxide layer is a limiting operational factor, which blocks charge transfer and therefore electrical signals for a range of applications. Etching the SiOx layer by fluoride solutions leaves a reactive Si-H surface that is only stable for few hours before it starts reoxidizing under ambient conditions. Controlled passivation of silicon is also of key importance for improving Si photovoltaic efficiency. Here, we show that a thin layer of graphene oxide (GOx) prevents Si surfaces from oxidation under ambient conditions for more than 30 days. In addition, we show that the protective GOx layer can be modified with molecules enabling a functional surface that allows for further chemical conjugation or connections with upper electrodes, while preserving the underneath Si in a nonoxidized form. The GOx layer can be switched electrochemically to reduced graphene oxide, allowing the development of a dynamic material for molecular electronics technologies. These findings demonstrate that 2D materials are alternatives to organic self-assembled monolayers that are typically used to protect and tune the properties of Si and open a realm of possibilities that combine Si and 2D materials technologies.
17 citations
TL;DR: Li et al. as discussed by the authors explored the reaction mechanism between TEOS and Li and proposed that fresh Li can directly react with TEOS even though no lithium hydroxide exists on the lithium surface, and the participation of water will accelerate the reaction process.
16 citations
TL;DR: In this article, an in situ crosslinked network is prepared as the binder of silicon (Si), Si-graphite and silicon oxide (SiO)-graphite anodes.
16 citations
TL;DR: In this paper, a nanostructure of graphene oxide films was deposited on the surface of silicon oxide to form a hybrid heterojunction diode, which exhibited a high rectification ratio at high voltage bias.
16 citations
TL;DR: In this article, the dominant electron transport mechanism changes from tunneling to drift-diffusion via pinholes in the SiOx layer for increasing Tann in the range of 850°C-950°C for a 1.3-1.5-nm thick thermal oxide, and 700-C-750-C for an oxide with tox ≥ 2-nm.
15 citations
15 citations
TL;DR: In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in lateral implanted 4HSiC MOSFETs.
15 citations
TL;DR: In this article, a combination of thermally driven reactions with microbubble-assisted printing was used for multilayered laser microprinting of conducting platinum and insulating silicon oxide layers.
Abstract: Production of multilayered microstructures composed of conducting and insulating materials is of great interest as they can be utilized as microelectronic components. Current proposed fabrication methods of these microstructures include top-down and bottom-up methods, each having their own set of drawbacks. Laser-based methods were shown to pattern various materials with micron/sub-micron resolution; however, multilayered structures demonstrating conducting/insulating/conducting properties were not yet realized. Here, we demonstrate laser printing of multilayered microstructures consisting of conducting platinum and insulating silicon oxide layers by a combination of thermally driven reactions with microbubble-assisted printing. PtCl2 dissolved in N-methyl-2-pyrrolidone (NMP) was used as a precursor to form conducting Pt layers, while tetraethyl orthosilicate dissolved in NMP formed insulating silicon oxide layers identified by Raman spectroscopy. We demonstrate control over the height of the insulating layer between ∼50 and 250 nm by varying the laser power and number of iterations. The resistivity of the silicon oxide layer at 0.5 V was 1.5 × 1011 Ωm. Other materials that we studied were found to be porous and prone to cracking, rendering them irrelevant as insulators. Finally, we show how microfluidics can enhance multilayered laser microprinting by quickly switching between precursors. The concepts presented here could provide new opportunities for simple fabrication of multilayered microelectronic devices.
15 citations
TL;DR: The effect of ceria concentration on the removal rate of silicon oxide via chemical mechanical planarization was investigated in this article, where a wide adsorption layer was formed on the wafer surface with ceria abrasive of both positive and negative charges.
01 Mar 2021
TL;DR: In this paper, it was shown that ex situ phosphorus-doped polycrystalline silicon on silicon oxide (poly-Si/SiOx) passivating contacts can suffer a pronounced surface passivation degradation when...
Abstract: It has previously been shown that ex situ phosphorus-doped polycrystalline silicon on silicon oxide (poly-Si/SiOx) passivating contacts can suffer a pronounced surface passivation degradation when ...
TL;DR: In this article, an electron selective passivating contact metallized with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells was presented.
TL;DR: In this paper, a full lithium-ion-sulfur cell with a remarkable cycle life was achieved by combining an environmentally sustainable biomass-derived sulfur-carbon cathode and a pre-lithiated silicon oxide anode.
Abstract: A full lithium-ion-sulfur cell with a remarkable cycle life was achieved by combining an environmentally sustainable biomass-derived sulfur-carbon cathode and a pre-lithiated silicon oxide anode. X-ray diffraction, Raman spectroscopy, energy dispersive spectroscopy, and thermogravimetry of the cathode evidenced the disordered nature of the carbon matrix in which sulfur was uniformly distributed with a weight content as high as 75 %, while scanning and transmission electron microscopy revealed the micrometric morphology of the composite. The sulfur-carbon electrode in the lithium half-cell exhibited a maximum capacity higher than 1200 mAh gS-1 , reversible electrochemical process, limited electrode/electrolyte interphase resistance, and a rate capability up to C/2. The material showed a capacity decay of about 40 % with respect to the steady-state value over 100 cycles, likely due to the reaction with the lithium metal of dissolved polysulfides or impurities including P detected in the carbon precursor. Therefore, the replacement of the lithium metal with a less challenging anode was suggested, and the sulfur-carbon composite was subsequently investigated in the full lithium-ion-sulfur battery employing a Li-alloying silicon oxide anode. The full-cell revealed an initial capacity as high as 1200 mAh gS-1 , a retention increased to more than 79 % for 100 galvanostatic cycles, and 56 % over 500 cycles. The data reported herein well indicated the reliability of energy storage devices with extended cycle life employing high-energy, green, and safe electrode materials.
TL;DR: In this paper, the authors presented a novel method to produce graphene oxide nanoparticles based on burning polyvinyl alcohol upon the surface of SiO2/p-Si surface.
TL;DR: In this article, the impact of hydrogen desorption on the electrical properties of TiOx on crystalline silicon (c-Si) with SiOy interlayers is studied for the development of high-performance TiOx carrier-selective contacts.
TL;DR: In this paper, the stability and degradation mechanism of SiNx and SiOx barrier films at high temperature and under high humidity using water vapor transmission rate (WVTR) measurements and cyclic bending tests was investigated.
TL;DR: In this article, a novel passivation contact structure based on nanocrystalline silicon oxide (nc-SiOx) films was investigated for TOPCon solar cells to enhance transparency.
TL;DR: In this article, simple hot pressing and vacuum pre-treatment at 1600°C followed by hot pressing were used for obtaining dense composites of ZrB2 −15% SiC −5% Mo2C.
Patent•
20 May 2021
TL;DR: In this paper, the negative electrode material of the present application comprises silicon-containing particles and carbon layer coating at least part of the surface of SiOx, and the ratio of the height I510 of the peak at 510 cm-1 to the height i1350/I1350 < 12.
Abstract: The present application relates to a negative electrode material, an electrochemical device comprising same, and an electronic device. The negative electrode material of the present application comprises silicon-containing particles. The silicon-containing particle comprises: silicon oxide SiOx, , wherein x is 0.5-1.6; and a carbon layer coating at least part of the surface of SiOx, wherein in Raman spectroscopy, the ratio of the height I1350 of the peak of the silicon-containing particle at 1,350 cm-1 to the height I1580 of the peak at 1,580 cm-1 satisfies 0
TL;DR: In this article, the role of the SiO2 layer in the functionality of Fe3O4/SiO2/Si heterostructures was analyzed and its role on the transport, magnetic and magneto transport response was revealed.
Abstract: In this work we analyze the role of the SiO2 layer in the functionality of Fe3O4/SiO2/Si heterostructures, which have been proved to present a strong potential for spin-based applications. Nevertheless, a complete control of the interfaces properties is fundamental for application. In this work, high quality heterostructures are fabricated avoiding chemical exchange and achieving good quality interfaces. The chemical interaction between the Fe3O4 and SiO2 layers during the heterostructures manufacture is deeply analyzed and its role on the transport, magnetic and magneto transport response is revealed. It is proven that during Fe3O4 deposition a competitive interplay happens between the catalytic action of Fe atoms, the transport of dissociated oxygen through SiO2 and the stabilization of Fe3O4. A defective silicon oxide layer is found to grow on top of the native SiO2 enabling the formation of single phase Fe3O4 layer. Such a defective layer and the granular character of the Fe3O4 determine the magnetic and transport response of the heterostructures. The present results prove that the defects in the SiO2 layer induce the switching of the MR sign, so that anomalous positive MR at RT exceeding 17% at 80 kOe is obtained in heterostructures with 19 nm thick magnetite layer, while conventional negative MR response is obtained for thicker films.
DOI•
02 Dec 2021TL;DR: In this article, the authors conduct extensive experiments and simulations to clarify the underlying dynamics of the junction featuring local pinholes, including pinhole formation processes and charge-carrier transport mechanisms.
Abstract: Summary Tunnel oxide passivating contact (TOPCon) technology has attracted much attention in the crystalline silicon (c-Si) photovoltaic (PV) community due to overwhelming advantages for device efficiency and cost. However, fundamental device physics of the core structure of TOPCon (i.e., the polycrystalline silicon [poly-Si]/silicon oxide [SiOx]/c-Si junction), are not yet fully understood. Here, we conduct extensive experiments and simulations to clarify the underlying dynamics of the junction featuring local pinholes, including pinhole formation processes and charge-carrier transport mechanisms. The pinhole formation process is investigated by following the film dynamics, which suggest that stress due to thermal expansion is probably responsible for SiOx film fracture. The carrier transport mechanism of the poly-Si/SiOx/Si junction is numerically investigated, revealing that tunneling charge-carrier transport couples with direct transport through pinholes. Moreover, a detailed current-recombination analysis in conjunction with predictions of device efficiencies is demonstrated, providing a specific technical route to promote device efficiencies to 27%.
01 Apr 2021
TL;DR: In this article, temperature-dependent ac conductivity, impedance spectroscopy, and complex dielectric properties have been investigated on boron-doped silicon oxide (SiOX:H) films grown by radio frequency plasma-e...
Abstract: Temperature-dependent ac conductivity, impedance spectroscopy, and complex dielectric properties have been investigated on boron-doped silicon oxide (SiOX:H) films grown by radio frequency plasma-e...
TL;DR: In this paper, the application of Bayesian optimization (BO) to accelerate the time-intensive process optimization of many parameters, to fabrication of the high-performance titanium oxide/silicon oxide/crystalline silicon passivating contact was reported.
TL;DR: In this article, a Si nanoparticles with a thick surficial oxide layer of ∼20nm (Si@SiOx) were fabricated through thermal oxidation and investigated electrochemically.
TL;DR: In this article, the authors demonstrate the charge storage dependency on the size of a gold-nanoparticle (Au-NP) by using a contact mode atomic force microscope, where individually dispersed Au-NPs are sandwiched between a thin layer of TiO2 blocking layer and SiO2 tunneling layer thin films.
Abstract: Nonvolatile memory technology is a necessary component in many electronic devices. With the scaling down of memory devices to achieve high density and low power consumption, floating gate devices encounter various challenges like high leakage current, which leads to reliability issues and a decrease in charge density. Therefore, the use of metal nanoparticles (NPs) as charge storage centers is becoming a promising candidate due to their excellent scalability and favorable reliability. In this work, we demonstrate the charge storage dependency on the size of a gold-nanoparticle (Au-NP) by using a contact mode atomic force microscope. The individually dispersed Au-NPs are sandwiched between a thin layer (3 nm) of TiO2 blocking layer and SiO2 (2 nm) tunneling layer thin films. The consecutive I–V sweeps on a pristine device of stacking TiO2/Au-NP/SiO2/n-Si show that the threshold voltage (ΔV) increases with the increase in the Au-NP size, whereas the retention shows much more stability time with smaller size NPs, in the range of 10 nm.