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Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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TL;DR: In this article, the surface properties of silicon carbide powder were investigated by zeta potential measurements and compared with silicon oxide powder, and the quantitative adsorption behavior of polyethylene imine onto silicon carbides in aqueous solution was measured with UV adsorsorption spectrum at three pH ranges.
Abstract: The surface properties of silicon carbide powder was investigated by zeta potential measurements and compared with silicon oxide powder. The quantitative adsorption behaviour of polyethylene imine onto silicon carbide powder in aqueous solution is measured with UV adsorption spectrum at three pH ranges. In acid and neutral pH ranges, the adsorption isotherms belong to Langmuir type and reach the maximum value around 0.038 mg/m 2 . In basic range, the adsorption amount is more than 10 times that in the low pH range, as high as 0.456 mg/m 2 . The FTIR spectra are presented to verify this adsorption. Improved rheological properties of slurries are obtained through addition of PEI. An optimum amount of dispersant is given as 1.0 dwb% when the solid content is kept as 40 vol%.
85 citations
TL;DR: In this paper, it was inferred that LPCVD oxynitrides are homogeneous on an atomic scale, i.e., the silicon atoms are randomly surrounded by oxygen and nitrogen atoms, and are therefore not to be conceived of as a physical two phase mixture of silicon oxide and silicon nitride.
Abstract: Silicon oxynitride (SiOxNy) films have been grown by a low‐pressure chemical vapor deposition (LPCVD) process from mixtures of SiH2Cl2, N2O, and NH3 at 820 °C. The overall layer composition can be varied by adjusting the N2O/NH3 gas flow ratio. Rutherford backscattering and Auger analysis of the films indicated a uniform composition throughout the layer, irrespective of the nature of the substrate. Both the thickness and the composition of these oxynitride films can conveniently be measured with ellipsometry; the oxygen to nitrogen ratio can be derived reliably from the value of the refractive index. It is inferred that LPCVD oxynitrides are homogeneous on an atomic scale, i.e., the silicon atoms are randomly surrounded by oxygen and nitrogen atoms, and are therefore not to be conceived of as a physical two phase mixture of silicon oxide and silicon nitride. Their stability in metal–oxynitride–oxide–silicon structures is found to improve with increasing oxygen content as regards flatband voltage shift upon temperature‐bias stress.
84 citations
TL;DR: In this article, the initial growth rate on hydroxyl-enriched silicon dioxide (SiO2) is found to be higher than on hydrogen-terminated silicon and the data show that the growth rate accelerated during the first several ALD cycles on both surfaces.
Abstract: Atomic layer deposition (ALD) of amorphous titanium dioxide (TiO2) at 100 °C using the precursors titanium tetrachloride (TiCl4) and water (H2O) was studied on two different surfaces by in situ X-ray photoelectron spectroscopy (XPS). The initial growth rate on hydroxyl-enriched silicon dioxide (SiO2) is found to be higher than on hydrogen-terminated silicon. Moreover, the data show that the growth rate is accelerated during the first several ALD cycles on both surfaces. The interface between the SiO2 substrate and TiO2 is abrupt and composed of Si−O−Ti bonds. On the hydrogen-terminated silicon surface, the XPS results provide evidence of direct Si−Ti bond formation without traces of interfacial oxide. However, a silicon oxide layer forms on this surface after vacuum annealing, concurrent with the reduction of TiO2, suggesting that the TiO2 film is the oxygen source for the silicon oxidation under these conditions. Chlorine incorporates into the TiO2 films on both surfaces and is found to concentrate near ...
84 citations
Patent•
29 Jul 2005
TL;DR: In this article, a light-shieldable film is formed on one principal plane of an optically transparent substrate, where the first light shieldable film consists of a first light-safe film 13 and a second light-helveable film 14 successively layered.
Abstract: PROBLEM TO BE SOLVED: To provide a photomask having a fine photomask pattern formed thereon with high precision, and also to provide a photomask blank for the photomask. SOLUTION: A light-shieldable film 12 is formed on one principal plane of an optically transparent substrate 11, wherein the light-shieldable film 12 comprises a first light-shieldable film 13 and a second light-shieldable film 14 successively layered. The first light-shieldable film 13 is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldale film 14 is the film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition metal nitride or silicon/transition metal oxynitride. The silicon-containing compound has a composition of 10 to 95 at% silicon, 0 to 60 at% oxygen, 0 to 57 at% nitrogen, and 0 to 35 at% transition metal, and the transition metal is, for example, molybdenum (Mo). COPYRIGHT: (C)2006,JPO&NCIPI
84 citations
TL;DR: In this paper, two competitive processes, namely, the quantum confinement (QC) and quantum confinement-luminescence center (QCLC) process, take place in the photoluminecence (PL) mechanisms of the nanoscale Si/Si oxide systems containing oxidized porous silicon and a NSP-embedded Si oxide.
Abstract: There is much debate about the photoluminescence (PL) mechanisms of the nanoscale Si/Si oxide systems containing oxidized porous silicon and a nanoscale-Si-particle (NSP)-embedded Si oxide deposited by chemical vapor deposition, sputtering, or Si-ion implanting into Si oxide. In this paper, we suggest that two competitive processes, namely, the quantum confinement (QC) process and the quantum confinement-luminescence center (QCLC) process, take place in the PL. The photoexcitation occurs in the NSPs for both of the processes, while the photoemission occurs either in the NSPs for the QC process or in the luminescence centers (LCs) in Si oxide adjacent to the NSPs for the QCLC process. The rates of the two processes are compared quantitatively. Which process plays the major role in PL is determined by the capture cross section, the luminescence efficiency, and the density of the LCs, and the sizes of the NSPs. For a nanoscale Si/Si oxide system with the LCs having certain capture cross-section and luminescence efficiency, the higher the LC density and the larger the sizes of NSPs, the more beneficial for the QCLC process to surpass the QC process, and vice versa. For certain LC parameters, there is a critical most probable size for the NSPs. When the most probable size of the NSPs is larger than the critical one, the QCLC process dominates the PL, and when the most probable size of the NSPs is smaller than the critical one, the QC process dominates the PL. When the most probable size of the NSPs is close to the critical one, both the QC and QCLC processes should be taken into account. We have used this model to discuss PL experimental results reported for some nanoscale Si/Si oxide systems.
84 citations