Topic
Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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TL;DR: In this article, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that the gapfill portions of silicon oxide are selectively etched relative to other exposed portions exposed parallel to the ion implantation direction.
Abstract: Methods of forming self-aligned structures on patterned substrates are described. The methods may be used to form metal lines or vias without the use of a separate photolithography pattern definition operation. Self-aligned contacts may be produced regardless of the presence of spacer elements. The methods include directionally ion-implanting a gapfill portion of a gapfill silicon oxide layer to implant into the gapfill portion without substantially ion-implanting the remainder of the gapfill silicon oxide layer (the sidewalls). Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that the gapfill portions of silicon oxide are selectively etched relative to other exposed portions exposed parallel to the ion implantation direction. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.
81 citations
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TL;DR: In this article, a thin poly(styrene-block-methyl methacrylate) thin films with cylindrical microdomains oriented normal to the surface were used as templates for nanoscopic silica structures.
Abstract: Poly(styrene-block-methyl methacrylate) thin films with cylindrical microdomains oriented normal to the surface were used as templates for nanoscopic silica structures. Silicon oxide was synthesized using vapor-phase and liquid-phase sol−gel reactions of tetraethoxysilane (TEOS). The vapor-phase reaction selectively formed silicon oxide within the poly(methyl methacrylate) (PMMA) domains. The use of liquid sols led to reconstruction of the film by selective solvation of the PMMA chains, followed by mineralization of silicon oxide. In addition, the vapor-phase and liquid-phase reactions were used to deposit silica in porous polystyrene (PS) films made by selective etching of the PMMA cylinders. Removal of polymer by calcination in air at 500 °C resulted in ordered arrays of silica nanostructures. Dynamic wettability measurements were made on nanostructured surfaces after functionalization with hydrophobic organosilanes.
80 citations
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25 Dec 2003Abstract: After forming a gate insulating film on a semiconductor substrate, a silicon film is deposited on the gate insulating film, and a high-melting point metal film is deposited on the silicon film. After forming a hard mask made of a silicon oxide film or a silicon nitride film on the high-melting point metal film, the high-melting point metal film is dry etched by using the hard mask as a mask. After removing a residue or a natural oxide film present on the silicon film through dry etching, the silicon film is dry etched by using the hard mask as a mask. The residue or the natural oxide film is removed while suppressing excessive etching of the silicon film.
80 citations
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TL;DR: The formation of interfacial silicon oxide accompanying the deposition and annealing of zirconium oxide films on Si(100) has been examined in this paper, where the resulting films were exposed to ambient air and/or were annealed in O2 or N2.
80 citations
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TL;DR: In this paper, a hole-selective rear contact for p-type crystalline silicon solar cells is proposed, which is based on a layer stack comprising a chemically grown thin silicon oxide, an intrinsic silicon interlayer and an in-situ boron doped non-stoichiometric silicon-rich silicon carbide layer on top.
80 citations