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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


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Patent
14 Jul 1997
TL;DR: In this article, the authors describe three-dimensional porous web structures with a homogeneous composition with a uniform ratio of silicon to the metal in an oxygen-containing atmosphere in a diffusion cloud chamber.
Abstract: Nanoparticles of silicon oxide alloys (i.e., oxides of SiMo, SiPt, and SiAl) are produced by laser vaporization of a silicon target and a target of a metal (i.e., Mo, Pt, or Al), in an oxygen containing atmosphere in a diffusion cloud chamber, where the target metal vapors aggregate into novel three-dimensional porous web structures. The structures have a homogeneous composition with a uniform ratio of silicon to the metal.

77 citations

Patent
19 Aug 1994
TL;DR: In this article, a first metallization layer is locally formed on the surface of a semiconductor substrate, leaving portions of the substrate's surface exposed, followed by the formation of an HMDS molecular layer on the first silicon oxide layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS.
Abstract: A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

77 citations

Journal ArticleDOI
TL;DR: In this paper, the growth of silicon dioxide in a microwave discharge was investigated, and the oxide growth can be characterized by a rate-limiting diffusion process modified by sputtering effects produced by the discharge.
Abstract: The growth of silicon dioxide in a microwave discharge was investigated. The oxide growth can be characterized by a rate‐limiting diffusion process modified by sputtering effects produced by the discharge. Analysis of the growth behavior leads to the conclusion that a limiting oxide thickness is obtained at infinite time. The growth process provides a technique for rapidly oxidizing silicon at temperatures estimated to be 500°C or lower. At these low temperatures, growth rates corresponding to steam‐oxidization rates at 1100°C can be obtained. Films about 2000 A thick can be grown in five minutes, and about 6000 A thick in sixty minutes. High‐quality oxides are produced by this process with properties which are for the most part indistinguishable from those of thermally grown oxides. MOS capacitance—voltage measurements indicate that these oxides are essentially free of mobile ions.

77 citations

Patent
24 Dec 2002
TL;DR: In this article, a barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide and a silicon nitride film, both formed on semiconductor substrate.
Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

77 citations

Patent
04 Jul 2006
TL;DR: In this article, a perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon.
Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

77 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621