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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, it was shown that the performance of indium-oxide-based sensors is qualitatively very similar to that of tin-oxide based sensors, and that indiumoxide sensors are significantly more sensitive to butane and propane compared to other test gases.
Abstract: Reactively sputtered SnOx and InOx thin films, plain and surface doped with Pt, have been covered with layers of various insulating films and catalysts Test gases used are carbon monoxide, methane, ethanol, butane and propane Filters used are alumina (Al2O3), silicon oxide (SiO2) and tungsten trioxide (WO3) Palladium has also been added on the surface of alumina filters, while platinum is added on the surface of metal-oxide sensor films Response to hydrocarbons, and especially to butane and propane is found to be enhanced with the addition of noble metals on the sensing film or on the filter It is also found that a WO3 filter improves the carbon monoxide sensitivity at low working temperatures and reduces the sensor response to ethanol with respect to other test gases The behaviour of indium-oxide-based sensors is qualitatively very similar to that of tin-oxide-based sensors

75 citations

Journal ArticleDOI
TL;DR: In this article, the optical anisotropy of individual silicon nanowires has been investigated and a narrow emission band was observed associated with a fast luminescence decay in the picosecond region and is considered due to the recombination relaxation of confined electronic states.
Abstract: Photoluminescence (PL) spectroscopy of individual silicon nanowires has been investigated. A narrow emission band (85 meV) was observed associated with a fast luminescence decay in the picosecond region and is considered due to the recombination relaxation of confined electronic states. The optical anisotropy was found in the individual nanowires. When a wire was excited by linearly polarized light, the maximum intensity of linearly polarized PL was along the axis direction of the wire, and the maximum degree of polarization was determined to be 0.5. The value agrees well with the calculated one, which suggests that the polarization arise from the dielectric contrast between the crystalline cores and the silicon oxide sheathes of the nanowires.

75 citations

Patent
23 Dec 1999
TL;DR: In this paper, a low pressure strike is used to establish flows of the process gases such that the pressure in the chamber is between 5 and 100 millitorr, turning on a bias voltage for a period of time sufficient to establish a weak plasma, which may be capacitively coupled.
Abstract: A method of depositing a dielectric film on a substrate, comprising depositing a silicon oxide layer on the substrate; and treating the dielectric layer with oxygen. A layer of FSG having a fluorine content of greater than 7%, as measured by peak height ratio, deposited by HDP CVD, is treated with an oxygen plasma. The oxygen treatment stabilizes the film. In an alternative embodiment of the invention a thin (<1000 Å thick) layer of material such as silicon nitride is deposited on a layer of FSG using a low-pressure strike. The low pressure strike can be achieved by establishing flows of the process gases such that the pressure in the chamber is between 5 and 100 millitorr, turning on a bias voltage for a period of time sufficient to establish a weak plasma, which may be capacitively coupled. After the weak plasma is established a source voltage is turned on and subsequently the bias voltage is turned off. Silicon nitride layers deposited using the low pressure strike exhibit good uniformity, strong adhesion, and inhibit outgassing from underlying layers.

75 citations

Journal ArticleDOI
TL;DR: In this paper, a silicon oxide layer was prepared using a mixture of an organosilicon compound, that is, tetramethylsilane or tetramethoxysilane, and oxygen as a source gas.

75 citations

Journal ArticleDOI
TL;DR: In this paper, the power efficiency of a multilayer LED and a single-layer LED was compared under direct current and time-resolved pulsed-current injection schemes.
Abstract: Thin film metal-oxide-semiconductor light emitting devices (LEDs) based on nanocrystalline silicon multilayer structure were grown by plasma-enhanced chemical vapor deposition. Room temperature electroluminescence was studied under direct current and time-resolved pulsed-current injection schemes. Multilayer LEDs operating at voltages below 5 V and electroluminescence turn-on voltage of 1.4–1.7 V are demonstrated. The turn-on voltage is less than 3.2 V which corresponds to the barrier height at the silicon oxide interface for electrons. Electrical injection in the multilayer LED is controlled by direct tunneling of electrons and holes among silicon nanocrystals. This injection regime is different than the Fowler–Nordheim tunneling that controls the electron injection in single thick layer LED operating at high voltages. A comparison of the power efficiency for the multilayer based LED and a similar single thick layer LED shows larger power efficiency for the former than for the second. Our results open ne...

75 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621