Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Goniochromatic luster pigments with silicon-containing coating

Abstract: Goniochromatic luster pigments based on multiply coated platelet-shaped metallic substrates comprising at least one layer packet of A) a layer consisting essentially of silicon oxide, silicon oxide hydrate, aluminum oxide and/or aluminum oxide hydrate, and B) a nonselectively absorbing, silicon-containing layer which is at least partially transparent to visible light, and also, if desired, additionally C) an outer layer which consists essentially of colorless or selectively absorbing metal oxide, are useful for coloring paints, inks, including printing inks, plastics, glasses, ceramic products and decorative cosmetic preparations.

[method for forming an oxide/ nitride/oxide stacked layer]

Abstract: A method for fabricating a silicon oxide/silicon nitride/silicon oxide stacked layer structure is described. A bottom oxide layer is formed over a substrate. A surface treatment is then performed on the first silicon oxide layer to form an interface layer over the bottom oxide layer. The surface treatment is conducted in a nitrogen ambient. Thereafter, a silicon nitride layer is formed over the interface layer, followed by forming an upper silicon oxide layer over the silicon nitride layer.

Plasma nitridation for reduced leakage gate dielectric layers

Abstract: A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes nitridizing a thin silicon oxide film in a low power, direct plasma formed from nitrogen. A gas having a lower ionization energy than nitrogen, such as for example, helium, may be used in combination with nitrogen to produce a lower power plasma resulting in a steeper concentration curve for nitrogen in the silicon oxide film.

Glass body provided with an alkali diffusion-preventing silicon oxide layer

Abstract: A glass body comprising an alkali-containing glass substrate and a silicon oxide layer formed on its surface for preventing diffusion of alkali metal ions from the glass substrate. Said silicon oxide layer contains hydrogen bonded to silicon.

Isotropic atomic layer etch for silicon oxides using no activation

Abstract: Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of NO activation of an oxide surface. Once activated, a fluorine-containing gas or vapor etches the activated surface. Etching is self-limiting as once the activated surface is removed, etching stops since the fluorine species does not spontaneously react with the un-activated oxide surface. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where accurate removal of one or multiple atomic layers of material is desired.