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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


Papers
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Journal ArticleDOI
01 Oct 2001-Carbon
TL;DR: In this article, the diameters of the carbon nanotubes are distributed in the range 80-120 nm and the length is about 20 μm, and the emission current density is 1.1 mA/cm2 at an applied field of about 4.5 V/μm.

73 citations

Patent
08 Oct 1992
TL;DR: In this article, the dielectric layers between the conductive layers of an integrated circuit are formed and planarized via combining TEOS with ozone silicon oxide pyrolytic deposition with plasma-enhanced deposition processes and spin-on-glass processes.
Abstract: A new method of planarizing an integrated circuit is achieved. The dielectric layers between the conductive layers of an integrated circuit are formed and planarized via combining TEOS with ozone silicon oxide pyrolytic deposition with plasma-enhanced deposition processes and spin-on-glass processes. A first insulator layer is provided over the conductive layer by plasma-enhanced chemical vapor deposition (PECVD). This insulator layer is covered with a layer of TEOS with ozone deposited silicon oxide by pyrolytic chemical vapor deposition (THCVD). The TEOS with ozone silicon oxide layer will fill the irregular trenches and holes in the conductive layer structure not filled by the first insulator layer. The TEOS with ozone layer is anisotropically etched back leaving the TEOS with ozone layer only in the trenches and holes of the layer structure. A second insulating layer is deposited by PECVD and then is covered by at least one spin-on-glass layer to fill the wider valleys of the irregular structure. The spin-on-glass layer is cured, then partially blanket anisotropically etched through its thickness to the underlying second oxide layer at its highest points and leaving the spin-on-glass layer portions in the valleys. A top dielectric layer is deposited over the spin-on-glass layer to complete the planarization.

73 citations

Journal ArticleDOI
TL;DR: In this paper, X-ray Photoelectron Spectroscopy (XPS), Secondary Ion Mass Spectrometry (SIMS), and Atomic Force Microscopy (AFM) studies of 3-aminopropyltrimethoxysilane (APTMS) film on a silicon oxide substrate were reported.

73 citations

Journal ArticleDOI
TL;DR: In this paper, the Young's modulus of the silicon oxide is determined and the possibility of fabricating small three-dimensional structures, using focused ion beam deposition of silicon oxide, is explored.
Abstract: In this work, some of the possibilities of focused ion beams for applications in microsystem technology are explored. Unlike most previous studies, the emphasis is on `additive' techniques, i.e. localized maskless deposition of metals and insulators. More precisely, we will show the possibility of fabricating small three-dimensional structures, using focused ion beam deposition of silicon oxide. Deposition examples will show that the technique is most promising for small post-processing steps or prototyping, because of its high degree of flexibility. Furthermore, an investigation into the mechanical properties of the deposited material is presented. More specifically, the Young's modulus of the deposited silicon oxide is determined.

73 citations

Journal ArticleDOI
TL;DR: The starting point of the study was the electron beam induced deposition (EBID) technique and the aim here was to generate clean iron nanostructures on a SiOx layer on Si(001), a prototype example for conductive structures on an insulating material.
Abstract: The injection or removal of electrons can be used to trigger chemical processes, such as bond formation or dissociation. In this regard, electrons are an excellent and “clean” tool to modify or engineer the properties of different materials. The availability of localized electron probes, for example, in scanning electron microscopy (SEM), has made it possible to apply electron-induced processes on the nanometer and subnanometer scale. This approach can be used to target the generation of extremely small, pure nanostructures with lithographic control, which is one of the main goals in nanotechnology. The starting point of our study was the electron beam induced deposition (EBID) technique. The principle of EBID is outlined in Scheme 1a–c. A highly focused electron beam locally decomposes adsorbed precursor molecules to leave a deposit of nonvolatile fragments. The importance of EBID recently increased since it superseded focused ion beam processing as a method to repair lithographic masks in the semiconductor industry. The underlying physical and chemical principles of electron-induced bond making and breaking are in general also of great interest for important technological applications such as electron beam lithography (EBL), which is the standard method of generating the masks for UV lithography. As there is a large variety of precursor molecules and there are nearly no restrictions in regard to the substrate, EBID allows almost every combination of deposit material and substrate to be targeted. As a prototype example for conductive structures on an insulating material, our aim here was to generate clean iron nanostructures on a SiOx layer on Si(001). Scheme 1a–c depicts a schematic representation of

73 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621