Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Finfet devices with unique fin shape and the fabrication thereof

Abstract: A semiconductor device includes a PMOS FinFET and an NMOS FinFET. The PMOS FinFET includes a substrate, a silicon germanium layer disposed over the substrate, a silicon layer disposed over the silicon germanium layer, and a PMOS fin disposed over the silicon layer. The PMOS fin contains silicon germanium. The NMOS FinFET includes the substrate, a silicon germanium oxide layer disposed over the substrate, a silicon oxide layer disposed over the silicon germanium oxide layer, and an NMOS fin disposed over the silicon oxide layer. The NMOS fin contains silicon. The silicon germanium oxide layer and the silicon oxide layer collectively define a concave recess in a horizontal direction. The concave recess is partially disposed below the NMOS fin.

Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon

Abstract: The detailed structure of porous Si (PS) layers formed in p-type wafers with resistivities 0.01-25 Omega cm has been investigated using reflectance, transmission, ellipsometry and photoluminescence techniques. Marked differences were observed in the optical properties of PS formed in degenerate or non-degenerate Si and these results are correlated with the results of other techniques. The optical techniques together with effective medium modelling have been shown to be useful non-destructive methods for either assessment of PS density or detection of unsuspected phases. The degenerate PS layers consistently showed good retention of the single-crystal characteristics of the starting wafer, only c-Si and voids being detected. For these samples, good agreement was obtained between optical and gravimetric densities. However, the non-degenerate PS had much greater variability, with greater loss of crystallinity and significant incorporation of oxygen, due to partial oxidation having occurred on or immediately after anodisation. Oxide fractions have been determined both optically and gravimetrically, with up to 50% oxide being detected in some samples. Non-degenerate PS samples with high oxygen concentrations appeared to be in the form of a chemical mixture, SiOx, from interpretation of the optical constants. Photoluminescence measurements together with the other techniques indicated a complex mixture of phases in the latter samples-voids, alpha -Si:O (and/or alpha -Si:H), an unknown amorphous phase and silicon oxide. This complex structure probably contributes to the observed instability of thick non-degenerate PS layers when heated in UHV as part of the cleaning procedure prior to epitaxial growth, all degenerate samples being able to withstand heat treatment.

High quality silicon oxide films by remote plasma cvd from disilane precursors

Abstract: A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.

Influence of capillary condensation of water on nanotribology studied by force microscopy

Abstract: The influence of capillary condensation and humidity to friction and adhesion properties on a nanometer scale has been studied using a bidirectional force microscope. On a hydrophilic silicon oxide surface strong capillary formation could be observed at high humidities, whereas, on less hydrophilic amorphous carbon films and lubricated silicon oxide surfaces, capillary formation is suppressed. The hydrophilicity of the surface is also found to promote the lubricative effects of adsorbed water.

High selectivity Si-rich SiON etch-stop layer

Abstract: The present invention provides an anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer and two compatible oxide etch processes The Si-Rich Silicon oxynitride (SiON) etch barrier layer can be used as a hard mask in a dual damascene structure and as a hard mask for over a polysilicon gate The invention has the following key elements: 1) Si rich Silicon oxynitride (SiON) ARC layer, 2) Special Silicon oxide Etch process that has a high selectivity of Si-Rich SiON to silicon oxide or SiN; 3) Special Si Rich SiON spacer process for a self aligned contact (SAC) A dual damascene structure is formed by depositing a first dielectric layer A novel anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer is deposited on top of the first dielectric layer A first opening is etched in the first insulating layer A second dielectric layer is deposited on the anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer A second dual damascene opening is etched into the dielectric layers The anti-reflective Si-Rich Silicon oxynitride (SiON) etch barrier layer can also serve as an ARC layer during these operations to reduce the amount of reflectance from conductive region to reduce distortion of the photoresist pattern