Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Semiconductor device having an SOI substrate

Abstract: Silicon oxide layers are provided in a substrate. That part of the silicon oxide layer which is located in a memory cell section MC has a thickness. That part of the silicon oxide layer which is located in a peripheral circuit section PC has a thickness, which is less than the thickness. The memory cell section MC has transistors, each having a source region and a drain region which contact the silicon oxide layer. The peripheral circuit section PC has transistors, each having a source region and a drain region which are spaced apart from the silicon oxide layer. The transistors of the peripheral circuit section PC are provided in well regions. A back-gate bias is applied to the transistors of the peripheral circuit section PC through impurity layers.

A Photoelectron Spectroscopic Study of Small Silicon Oxide Clusters: SiO2, Si2O3, and Si2O4

Abstract: We present an anion photoelectron spectroscopic study of SiO2, Si2O3, and Si2O4. We obtained the photoelectron spectra of these small silicon oxide anion clusters at 4.66 eV photon energy. All the spectra show broad photodetachment features, suggesting that there is considerable geometry change between the anion and the neutral. The vertical detachment energies are determined to be 2.76 (0.10), 2.75 (0.10), and 3.63 (0.1) eV for SiO2-, Si2O3-, and Si2O4-, respectively. The spectrum of Si2O3- shows a weak feature at lower binding energy, suggesting existence of another isomer. The spectra of GeO2- and Ge2O3- are also obtained and are compared to the silicon analogs. They are similar to the silicon oxide species, but both have higher detachment energies, 2.93 (0.07) eV for GeO2- and 3.01 (0.07) eV for Ge2O3-. The Ge2O3- spectrum is consistent with only one isomer. The structure and bonding of these small oxide clusters are discussed.

Stable trapping of electrons and holes in deposited insulating oxides: Al2O3, ZrO2, and HfO2

Abstract: Charge trapping in high-permittivity metal oxides (Al2O3, ZrO2, and HfO2) grown on (100)Si using various types of chemical vapor deposition (CVD) was studied using generation of electron-hole pairs in the oxide by 10 eV photons For most of the CVD methods, thin (≈5 nm) oxide films exhibit positive charging suggesting hole trapping as most efficient charge trapping process Negative charge is observed only in as-deposited nitrogen-containing films grown from Hf(NO3)4 The trapped positive charge depends only weakly on the HfO2 thickness indicating that holes are trapped in a silicon oxide interlayer grown between the Si and HfO2 during deposition, which is further affirmed by enhanced positive charging after additional oxidation of the samples at high temperatures The work function of the metal electrode material has a large influence on hole trapping in thin oxides, indicating electron exchange between the metal and defect states in the oxide In addition, trapping of positive charge correlates with lib

Semiconductor device and manufacturing method of the same

Abstract: The present invention intends to provide a technique that can improve the capacitance density while securing the withstand voltage of a capacitor element. In order to achieve the above object, the present inventive manufacturing method of a semiconductor device includes forming a metal film on a silicon oxide film, forming a SiN film on the metal film, forming a metal film on the SiN film, etching the upper most metal film with a photoresist film as a mask to form an upper electrode, thereafter forming a silicon oxide film that covers the upper electrode, patterning by etching the silicon oxide film and the SiN film with a photoresist film as a mask to form a capacitor insulating film and sputter-etching the lowermost metal film with the patterned silicon oxide film as a mask to form a lower electrode.

Improving the Stability in Aqueous Media of Polymer Brushes Grafted from Silicon Oxide Substrates by Surface‐Initiated Atom Transfer Radical Polymerization

Abstract: Hydrophilic polymer brushes grown via surface-initiated ATRP from silicon oxide surfaces are susceptible to detachment via hydrolytic cleavage of the anchoring siloxane bond. This paper investigates the influence of the structure of the ATRP initiator on the stability of these brushes and seeks for strategies to further enhance their stability. It is found that increasing the hydrophobicity of the organosilane modified ATRP initiator reduces the susceptibility of the brushes toward cleavage. Robust, hydrophilic polymer brushes are prepared, which are obtained by introducing a short, hydrophobic PMMA or PEHMA block between the silicon oxide substrate and the hydrophilic polymer brush.