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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


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Patent
15 Jul 1998
TL;DR: In this article, a method for forming self-aligned, metal silicide (salicide), layers, on polysilicon gate structures, and on source/drain regions, located in a first region of a semiconductor substrate, while avoiding the salicide formation, was developed.
Abstract: A method for forming self-aligned, metal silicide, (salicide), layers, on polysilicon gate structures, and on source/drain regions, located in a first region of a semiconductor substrate, while avoiding the salicide formation, on polysilicon gate structures, and on source/drain regions, located in a second region of a semiconductor substrate, has been developed. A composite insulator shape, comprising an overlying silicon nitride layer, and an underlying TEOS deposited, silicon oxide layer, is used to block polysilicon, as well as silicon regions, in the second region of the semiconductor substrate, from salicide formation. Unwanted silicon oxide spacers, created on the sides of polysilicon gate structures, during the patterning of the composite insulator shape, is selectively removed using dilute hydrofluoric acid solutions.

71 citations

Journal ArticleDOI
TL;DR: Time-of-flight secondary-ion mass spectroscopy and X-ray photoelectron spectroscopic investigations showed that the native silicon oxide films on the AFM probe surfaces are completely covered by organic contaminants for the as-received AFM probes, while the cleaning methods effectively remove much of the hydrocarbons and silicon oils to reveal the underlying oxidized silicon of the probes.
Abstract: The silicon surface of commercial atomic force microscopy (AFM) probes loses its hydrophilicity by adsorption of airborne and package-released hydrophobic organic contaminants. Cleaning of the probes by acid piranha solution or discharge plasma removes the contaminants and renders very hydrophilic probe surfaces. Time-of-flight secondary-ion mass spectroscopy and X-ray photoelectron spectroscopy investigations showed that the native silicon oxide films on the AFM probe surfaces are completely covered by organic contaminants for the as-received AFM probes, while the cleaning methods effectively remove much of the hydrocarbons and silicon oils to reveal the underlying oxidized silicon of the probes. Cleaning procedures drastically affect the results of adhesive force measurements in water and air. Thus, cleaning of silicon surfaces of the AFM probe and sample cancelled the adhesive force in deionized water. The significant adhesive force values observed before cleaning can be attributed to formation of a bridge of hydrophobic material at the AFM tip-sample contact in water. On the other hand, cleaning of the AFM tip and sample surfaces results in a significant increase of the adhesive force in air. The presence of water soluble contaminants at the tip-sample contact lowers the capillary pressure in the water bridge formed by capillary condensation at the AFM tip-sample contact, and this consequently lowers the adhesive force.

71 citations

Patent
24 Sep 1986
TL;DR: In this paper, a semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator.
Abstract: A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the insulator is a layer of deposited or thermal silicon oxide. The breakdown may be enhanced by voltage applied between the conductors while the laser beam is focused on the structure.

71 citations

Patent
29 Oct 1993
TL;DR: In this paper, a method for the formation of a thick silicon oxide film on the surface of a substrate is described, which consists of forming a hydrogen silsesquioxane resin film on a substrate followed by converting the hydrogen silsquioxANE resin into silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume %, up to, but not including, 100 vol % inert gas.
Abstract: Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate followed by converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 vol % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.

71 citations

Journal ArticleDOI
TL;DR: In this article, the spectral changes observed indicate the formation of bismuth metallic colloids as well as the bridged SiO 4 tetrahedra structure in the glass surface layer during reduction.
Abstract: Raman (10–1200 cm −1 ) and infrared reflectance (100–2000 cm −1 ) spectra are reported for bismuth silicate glasses of the formula x Bi 2 O 3 · (10− x )SiO 2 with x = 9, 8, 7, 6, 5, 4. The basic vibrational characteristics and the possible glass structure are discussed. The results provide evidence that bismuth oxide behaves as the network former while silicon oxide is present as isolated SiO 4 tetrahedra. Hydrogen treatment was performed at 300°C on a bismuth silicate glass with x = 5. The intensity of most Raman bands decreased with increasing exposure time. The infrared spectrum after reduction showed vibrational bands at 1124 and 1220 cm −1 which are characteristic of SiOSi stretching vibrational modes in a fused-silica network. The spectral changes observed indicate the formation of bismuth metallic colloids as well as the formation of the bridged SiOSi structure in the glass surface layer during reduction.

71 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621