Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Chemical-mechanical polishing slurry

Abstract: A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.

UV radiation source for densification of CVD carbon-doped silicon oxide films

Abstract: A UV radiation source is tunable to optimize the process of densifying a carbon-doped silicon oxide film. The composition and relative concentration of stimulated gases stimulated within an airtight bulb is controlled to produce radiation optimized for absorption by undesirable chemical bonds of the carbon-doped silicon oxide film, leading to disruption of these bonds and their replacement by more desirable stable chemical bonds. The energy of radiation emitted by the source is determined by the identity of excited chemical species, and the intensity of the radiation emitted by the source is determined by the concentration of the excited chemical species. By exciting a specific mixture of gases, radiation is emitted at a combination of energies and intensities calculated to disrupt populations of unstable bonds in the carbon-doped silicon oxide film while leaving desirable bonds in the film unaffected.

Plasma-deposited silicon oxide and silicon nitride films on poly(ethylene terephthalate): A multitechnique study of the interphase regions

Abstract: The “interphase” region between the deposited layer [e.g., plasma-enhanced chemically vapor deposited (PECVD) SiO2 or SiN] and the poly(ethylene terephthalate) (PET) substrate has been investigated and compared to physical vapor deposited (PVD) (electron beam evaporated) SiO2. Composition profiles determined by time-of-flight elastic recoil detection, electron microprobe analysis, and x-ray photoelectron spectroscopy all show an extended interphase region more than 50 nm in width, while the profile of the PVD SiO2 is narrower. However, since these analytical techniques are invasive and prone to artifacts, we have also examined ultrathin (about 10 and 20 nm) SiO2 and SiN PECVD layers on 50 nm spin-coated PET substrates by nondestructive infrared (IR) techniques. The IR spectra confirm that the thin PECVD deposits also comprise an organosilicon phase with Si–CHx bonds. We explain these observations in terms of a fragmentation/redeposition mechanism: During the earliest stage of PECVD, interaction between th...

A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics

Abstract: We compared the properties of ZnO thin-film transistors in the inverted coplanar geometry on thermally grown silicon oxide gate dielectric to devices on silicon nitride, grown by plasma-enhanced chemical vapor deposition at 150 °C or magnetron sputtering at room temperature. The ZnO semiconductor was sputtered without substrate heating at oxygen partial pressures in the range of 10−5−10−4 Torr. At the lowest oxygen partial pressure, transistor characteristics were similar for all dielectrics. The field-effect mobility approached ∼5 cm2/V s and devices generally operated in depletion mode. With increasing oxygen partial pressure, the mobility decreased by 1000× on SiO2, whereas the decrease on silicon nitride was considerably smaller. On SiO2 the threshold voltage was >30 V but <5 V on silicon nitride. Devices on SiO2 operated in enhancement mode, whereas they operated in depletion mode on PECVD silicon nitride. Photoluminescence of ZnO revealed that deep-level emission depended on the specific dielectric ...

Influence of the substrate on the early stage of the growth of hydrogenated amorphous silicon evidenced by kinetic ellipsometry

Abstract: Fast real‐time ellipsometry is used to study in situ, as a function of the substrate, the growth of the first tens of monolayers of hydrogenated amorphous silicon (a‐Si:H) deposited by a rf glow discharge of SiH4. The high sensitivity of this technique is illustrated and the early stage of the growth is found to strongly depend upon the nature of the substrate. A nucleation mechanism followed by incomplete coalescence is observed on metal and hydrogenated amorphous germanium (a‐Ge:H) substrates. On the contrary, fused silica (SiO2) and tin dioxide (SnO2) are superficially reduced: this reduction creates at the interface a mixed layer of a‐Si:H and silicon oxide on the silica substrate, and produces elemental tin at the surface of the SnO2 substrate. In this last case, tin is found to diffuse in the further a‐Si:H growing film. On crystalline silicon (c‐Si), the a‐Si:H growth shows incomplete coalescence followed by homogeneous growth, probably together with the reduction of the native c‐Si oxide layer.