Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Self-Assembly Formation of Lipid Bilayer Coatings on Bare Aluminum Oxide: Overcoming the Force of Interfacial Water

Abstract: Widely used in catalysis and biosensing applications, aluminum oxide has become popular for surface functionalization with biological macromolecules, including lipid bilayer coatings. However, it is difficult to form supported lipid bilayers on aluminum oxide, and current methods require covalent surface modification, which masks the interfacial properties of aluminum oxide, and/or complex fabrication techniques with specific conditions. Herein, we addressed this issue by identifying simple and robust strategies to form fluidic lipid bilayers on aluminum oxide. The fabrication of a single lipid bilayer coating was achieved by two methods, vesicle fusion under acidic conditions and solvent-assisted lipid bilayer (SALB) formation under near-physiological pH conditions. Importantly, quartz crystal microbalance with dissipation (QCM-D) monitoring measurements determined that the hydration layer of a supported lipid bilayer on aluminum oxide is appreciably thicker than that of a bilayer on silicon oxide. Fluor...

Mos type semiconductor device

Abstract: PURPOSE:To eliminate the insulating breakdown of an insulating oxidized film layer due to high frequency surge by increasing the thickness of the film layer of an input unit larger than the other part in response to the peak value of the surge. CONSTITUTION:An Si3N4 11 is grown on the overall surface of a P type silicon wafer 1, an Si3N4 of a region 10 is removed, a window is opened (a), and a silicon oxidize layer 2a is formed on the opened region 10 (b). Then, a silicon oxide layer 2b and further a silicon oxide layer 2c are formed based on similar LOCOS method (a silicon local oxidizing method) (c) and (d). Thereafter, polycrystalline silicons 5, 5a are formed on silicon oxide layers 2a, 2c (e), and then or simultaneously a gate 8 is formed by diffusion (f). Metal wirings 3, 5 are eventually formed by the deposition of aluminum (g).

Silicon penetration device with increased fracture toughness and method of fabrication

Abstract: A silicon penetration device with increased fracture toughness and method of fabrication thereof are provided. The method comprises strengthening silicon penetration devices by thermally growing a silicon oxide layer on the penetration device and then subsequently stripping the silicon oxide. The method also includes strengthening silicon penetration devices through the sputtering of thin film coatings on the silicon penetration devices.

Mechanism of the Chemical Deposition of Nickel on Silicon Wafers in Aqueous Solution

Abstract: The deposition of metallic nickel on n-Si(100) wafers was performed without external potential control in aqueous NiSO 4 solutions of different compositions at pH 8.0. Without giving any catalyzation treatment, the deposition of nickel on hydrogen-terminated Si(100) was confirmed in a conventional electroless plating bath containing NaH 2 PO 2 as the reducing agent, sodium citrate as the complexing agent, and (NH 4 ) 2 SO 4 as the buffering agent. The deposition of nickel was found to take place also in a bath without the reducing agent, and even in a simple solution consisting of NiSO 4 and (NH 4 ) 2 SO 4 . By using a transmission electron microscope equipped with an energy dispersive X-ray spectrometer, the cross sections of the films deposited from these solutions were examined, which revealed formation of silicon oxide between the Ni deposit and Si substrate. Based on these results, the mechanism of the entire process of electroless Ni deposition on Si is discussed.

Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation

Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 10 11 ions/cm 3 . The process gas includes H 2 , a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.