Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

SOI substrate having a high heavy metal gettering effect for semiconductor device

Abstract: An SOI substrate comprises a buried silicon oxide layer formed directly under an active silicon layer, and a layer containing phosphorus therein formed under the buried silicon oxide layer. The layer containing phosphorus therein acts as the getter layer, so that an effective gettering of heavy metals can be obtained in a wide temperature range from a low temperature region to a high temperature region. In addition, since the silicon oxide layer exists between the active layer and the getter layer, the diffusion of the phosphorus into the active layer is effectively prevented, and therefore, the phosphorus scarely diffuses to the active layer, so that the device manufactured is subjected to almost no adverse influence of the diffusion of the phosphorus.

Method of fabricating on-chip inductor

Abstract: A method of fabricating an on-chip inductor is disclosed. First, a semiconductor substrate is patterned and etched to form a trench into which an insulating layer is filled. The insulating layer is provided with a relative permitivity smaller than silicon oxide or a relative permeability greater than silicon oxide. Then, a spiral conductive coil is formed over the insulating layer.

Method of growing oxide films

Abstract: of Disclosure Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.

Metallization of Silicon Nanowires and SERS Response from a Single Metallized Nanowire

Abstract: A simple method was demonstrated to metallize silicon (Si) nanowire (NW) just by dipping it into an aqueous deposition solution for several minutes. During the metallization process, metal ions were reduced and deposited on the top of the Si NW (where surface Si was oxidized). The surface silicon oxide was simultaneously dissolved and removed by hydrogen fluoride (HF), so that the deposition reaction was sustainable and controllable. The deposited silver (Ag) nanoparticles (NPs) uniformly self-assembled along the Si NW and developed into a metal covering with the NW as its core. Not only Ag+ but also Cu2+, Pd2+, Co2+, Au3+, and Pt4+ were deposited to metallize the Si NW using the simplified metallization process. Applications of the new nanocomposite materials were also explored. When the resulting Ag NP/Si NW was tested as a surface-enhanced raman scattering (SERS) substrate, an extremely strong signal was observed and a detection limit of ∼600 molecules or 200−300 Ag NPs per laser spot was reached. The ...