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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


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Patent
15 Jul 1991
TL;DR: In this article, the authors proposed a method to obtain a selection ratio nearly equal to the one in the case where a silicon oxide film is used as mask material, by previously adding organic material having unsaturated bonds to etching gas.
Abstract: PURPOSE:To obtain a selection ratio nearly equal to the one in the case where a silicon oxide film is used as mask material, by previously adding organic material having unsaturated bonds to etching gas. CONSTITUTION:When dry etching is performed, in order to form contact holes and the like with a reactive ion etching equipment, by using a silicon oxide film as a mask, MMA (methacrylate methyl) being organic material having unsaturated bonds is added to etching gas. The organic material produces a polymerized film preventing the etching of substrate silicon, on the substrate silicon. Hence the decrease of the selection ratio of the silicon oxide film to the substrate silicon is avoided, and further the hole diameter dependency of the selection ratio can be decreased.

65 citations

Patent
16 May 2011
TL;DR: In this article, the anodes can be effectively combined into lithium ion batteries with high capacity cathode materials, and supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss.
Abstract: Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be effectively combined into lithium ion batteries with high capacity cathode materials. In some formulations, supplemental lithium can be used to stabilize cycling as well as to reduce effects of first cycle irreversible capacity loss. Batteries are described with surprisingly good cycling properties with good specific capacities with respect to both cathode active weights and anode active weights.

65 citations

Patent
30 Sep 1994
TL;DR: In this article, a new method of simultaneously forming differential gate oxide for both 3 and 5 V transistors is described, where a sacrificial silicon oxide layer is formed on the surface of a semiconductor substrate.
Abstract: A new method of simultaneously forming differential gate oxide for both 3 and 5 V transistors is described. A sacrificial silicon oxide layer is formed on the surface of a semiconductor substrate. Ions are implanted through the sacrificial silicon oxide layer into the planned 3 V transistor area of the semiconductor substrate wherein the implanted ions depress the oxidation rate of the semiconductor substrate. Alternatively, ions are implanted through the sacrificial silicon oxide layer into the planned 5 V transistor area of the semiconductor substrate wherein the implanted ions increase the oxidation rate of the semiconductor substrate. The sacrificial silicon oxide layer is removed and a layer of gate silicon oxide is grown on the surface of the semiconductor substrate. The growth rate of the gate silicon oxide will be slowed in the planned 3 V transistor area or will be increased in the planned 5 V transistor area resulting in a gate silicon oxide layer which is relatively thinner in the planned 3 V transistor area and relatively thicker in the planned 5 V transistor area. A layer of polysilicon is deposited over the gate silicon oxide layer and patterned to form gate electrodes for the 3V and 5V transistors.

65 citations

Journal ArticleDOI
Yu Zhu1, James M. Tour1
TL;DR: The GNRs, synthesized by unzipping carbon nanotubes, were reduced and functionalized, which are suitable to assemble thin films by electrostatic layer-by-layer absorption.
Abstract: Described here is a room temperature procedure to fabricate graphene nanoribbon (GNR) thin films. The GNRs, synthesized by unzipping carbon nanotubes, were reduced and functionalized. The functionalized GNRs are negatively or positively charged, which are suitable to assemble thin films by electrostatic layer-by-layer absorption. The homogenous full GNR films were fabricated on various substrates with controllable thicknesses. By assembling the GNRs films on silicon oxide/silicon surfaces, bottom-gated GNR thin-film transistors were fabricated in a solution processed technique.

65 citations

Journal ArticleDOI
TL;DR: Oxygen-implanted silicon-on-insulator (SIMOX) material, or SIMOX (separation by implantation of oxygen), is another chapter in the continuing development of new material technologies for use by the semiconductor industry as discussed by the authors.
Abstract: Oxygen-implanted silicon-on-insulator (SOI) material, or SIMOX (separation by implantation of oxygen), is another chapter in the continuing development of new material technologies for use by the semiconductor industry. Building integrated circuits (ICs) in a thin layer of crystalline silicon on a layer of silicon oxide on a silicon substrate has benefits for radiationhard, high-temperature, high-speed, low-voltage, and low-power operation, and for future device designs. Historically the first interest in SIMOX was for radiation-hard electronics for space, but the major application of interest currently is low-power, high-speed, portable electronics. Silicon-on-insulator also avoids the disadvantage of a completely different substrate such as sapphire or gallium arsenide. Formation of a buried-oxide (BOX) layer by high-energy, high-dose, oxygen ion implantation has the advantage that the ion-implant dose can be made extremely precise and extremely uniform. However the silicon and oxide layers are highly damaged after the implant, so high-temperature annealing sequences are required to restore devicequality material. In fact SIMOX process development necessitated the development of new technologies for high-dose implantation and high-temperature annealing.

64 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621