Topic
Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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TL;DR: In this article, a screw-dislocation-driven growth process is proposed for the formation of this novel structure based on detailed structural characterizations, which suggests that similar helical nanostructures of a wide range of materials may be synthesized.
Abstract: Helical crystalline silicon carbide nanowires covered with a silicon oxide sheath (SiC/SiO2) have been synthesized by a chemical vapor deposition technique. The SiC core typically has diameters of 10-40 nm with a helical periodicity of 40-80 nm and is covered by a uniform layer of 30-60 nm thick amorphous SiO2. A screw-dislocation-driven growth process is proposed for the formation of this novel structure based on detailed structural characterizations. The helical nanostructures may find applications as building blocks in nanomechanical or nanoelectronic devices. The screw-dislocation-induced growth mechanism suggests that similar helical nanostructures of a wide range of materials may be synthesized.
252 citations
Patent•
17 Aug 1992Abstract: A method of depositing good quality thermal CVD silicon oxide layers over a PECVD TEOS/oxygen silicon oxide layer comprising forming an interstitial layer by ramping down the power in the last few seconds of the PECVD deposition.
251 citations
TL;DR: In this paper, SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells.
Abstract: We show that SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells. By varying input gas ratios, SOIR layers with a wide range of optical and electrical properties are obtained. The influence of the SOIR thickness in the micromorph cell is studied and current gain and losses are discussed. Initial micromorph cell efficiency of 12.2% (Voc=1.40V, fill factor=71.9%, and Jsc=12.1mA∕cm2) is achieved with top cell, SOIR, and bottom cell thicknesses of 270, 95, and 1800nm, respectively.
244 citations
TL;DR: In this article, a sensor made by a bundle of etched silicon nanowires is presented, which exhibits a fast response, high sensitivity and reversibility, as well as the effect of silicon oxide sheath on the sensitivity.
243 citations
TL;DR: In this article, the authors investigated the nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface using infrared and x-ray photoelectron spectroscopies.
Abstract: The nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface is probed by infrared and x-ray photoelectron spectroscopies. The layer-by-layer composition of the interface is evaluated by uniformly thinning thermal oxide films from 31 A down to 6 A. We find that the thickness dependence of the frequencies of the transverse optical and longitudinal optical phonons of the oxide film cannot be reconciled by consideration of simple homogeneous processes such as image charge effects or stress near the interface. Rather, by applying the Bruggeman effective medium approximation, we show that film inhomogeneity in the form of substoichiometric silicon oxide species accounts for the observed spectral changes as the interface is approached. The presence of such substoichiometric oxide species is supported by the thickness dependence of the integrated Si suboxide signal in companion x-ray photoelectron spectra.
243 citations