Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formation

Abstract: Published experimental data on silicon oxide precipitate growth kinetics are interpreted in the framework of the theory of Ham for diffusion limited precipitation. A growth law for plate‐like, octahedral and spherical precipitates is derived showing a size dependence which varies as the square root of time. Using well accepted data for the solubility and the diffusion constant of oxygen in silicon, the calculations suggest that the precipitated phase is closer to SiO than to SiO2.

van der Waals screening by single-layer graphene and molybdenum disulfide.

Abstract: A sharp tip of atomic force microscope is employed to probe van der Waals forces of a silicon oxide substrate with adhered graphene. Experimental results obtained in the range of distances from 3 to 20 nm indicate that single-, double-, and triple-layer graphenes screen the van der Waals forces of the substrate. Fluorination of graphene, which makes it electrically insulating, lifts the screening in the single-layer graphene. The van der Waals force from graphene determined per layer decreases with the number of layers. In addition, increased hole doping of graphene increases the force. Finally, we also demonstrate screening of the van der Waals forces of the silicon oxide substrate by single- and double-layer molybdenum disulfide.

Method of forming a shallow trench isolation structure featuring a group of insulator liner layers located on the surfaces of a shallow trench shape

Abstract: A process for forming a shallow trench isolation (STI), structure in a semiconductor substrate, featuring a group of insulator liner layers located on the surfaces of the shallow trench shape used to accommodate the STI structure, has been developed. After defining a shallow trench shape featuring rounded corners, a group of thin insulator liner layers, each comprised of either silicon oxide or silicon nitride, is deposited on the exposed surfaces of the shallow trench shape via atomic layer depositing (ALD), procedures. A high density plasma procedure is used for deposition of silicon oxide, filling the shallow trench shape which is lined with the group of thin insulator liner layers. The silicon nitride component of the insulator liner layers, prevents diffusion or segregation of P type dopants from an adjacent P well region to the silicon oxide of the STI structure.

Semiconductor device and manufacturing method thereof

Abstract: PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device.SOLUTION: A silicon nitride film (a first insulating film) 5 is formed so as to cover a plurality of gate electrodes 3b, and then an ozone tetraethylorthosilicate (TEOS) film (a first silicon oxide film) 6 and a plasma TEOS film (a second silicon oxide film) are laminated in order. After laminating the ozone TEOS film 6, the ozone TEOS film is polished by the CMP method using the silicon nitride film 5 as a CMP stopper film before laminating the plasma TEOS film. Therefore, uniform film thickness of the plasma TEOS film is obtained, and the reliability of a semiconductor device can be improved.

Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress

Abstract: An experimental investigation of breakdown and defect generation under combined substrate hot-electron and tunneling electrical stress of silicon oxide ranging in thickness from 2.0 nm to 3.5 nm is reported. Using independent control of the gate current for a given substrate and gate bias, the time-to-breakdown of ultrathin silicon dioxide under substrate hot-electron stress is observed to be inversely proportional to the gate current density. The thickness dependence (2.0 nm to 3.5 nm) of substrate hot-electron reliability is reported and shown to be similar to constant voltage tunneling stress. The build-up of defects measured using stress-induced-leakage-current and charge-pumping for both tunneling and substrate hot-electron stress is reported. Based on these and previous results, a model is proposed to explain the time-to-breakdown behavior of ultrathin oxide under simultaneous tunneling and substrate hot-electron stress. The results and model provide a coherent understanding for describing the reliability of ultrathin SiO/sub 2/ under combined substrate hot-electron injection and constant voltage tunneling stress.