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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the formation of a silicon layer on a molybdenum (Mo) electrode at 850°C in a CaCl2 melt containing silicon oxide (SiO2) nanoparticles (NPs) was observed.

62 citations

Patent
14 Dec 2005
TL;DR: In this article, a method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process.
Abstract: A method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process. The process may include at least one cycle comprising a germanium oxide deposition sub-cycle and a silicon oxide deposition sub-cycle. The germanium oxide deposition sub-cycle may include contacting the substrate with a germanium reactant, removing excess germanium reactant, and contacting the substrate with a first oxygen reactant. The silicon oxide deposition sub-cycle may include contacting the substrate with a silicon reactant, removing excess silicon reactant, and contacting the substrate with a second oxygen reactant. The films of the present disclosure exhibit desirable etch rates relative to thermal oxide. Depending on the films' composition, the etch rates may be higher or lower than the etch rates of thermal oxide.

62 citations

Journal ArticleDOI
TL;DR: In this article, a uniformly distributed matrix of silicon dioxide pillars is embedded inside the silicon substrate to form a homogenous composite silicon oxide platform (SilOx) with nearly perfect temperature-compensated stiffness moduli.
Abstract: This paper presents a passive temperature compensation technique that can provide full cancellation of the linear temperature coefficient of frequency (TCF1) in silicon resonators. A uniformly distributed matrix of silicon dioxide pillars is embedded inside the silicon substrate to form a homogenous composite silicon oxide platform (SilOx) with nearly perfect temperature-compensated stiffness moduli. This composite platform enables the implementation of temperature-stable microresonators operating in any desired in- and out-of-plane resonance modes. Full compensation of TCF1 is achieved for extensional and shear modes of SilOx resonators resulting in a quadratic temperature characteristic with an overall frequency drift as low as 83 ppm over the industrial temperature range ( -40°C to 80°C). Besides a 40 times reduction in temperature-induced frequency drift in this range, SilOx resonators exhibit improved temperature stability of Q compared with their single crystal silicon counterparts.

62 citations

Patent
25 Jan 2002
TL;DR: In this article, a high-reliability semiconductor device and its manufacturing method which prevents the characteristics from varying due to etching damages or auto-doping of impurities is provided.
Abstract: PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device and its manufacturing method which prevents the characteristics from varying due to etching damages or auto-doping of impurities SOLUTION: The semiconductor device has a first insulation film 9 formed on semiconductor substrates 1, 2, semiconductor layer 10 at least a part of which is formed on the first insulation layer 9, second insulation film 11a composed of a nondoped silicon oxide film formed on the semiconductor layer 10, third insulation film 11b composed of a phosphorus-containing silicon oxide film formed on the second insulation film 11a, and fourth insulation film 11c composed of a nondoped silicon oxide film formed on the third insulation film 11b And its manufacturing method is provided

62 citations

Journal ArticleDOI
TL;DR: TEMPOS as mentioned in this paper is a family of tunable electronic material with pores in oxide on silicon structures, which can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon.
Abstract: The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. 1 The basic characteristics of these “TEMPOS” (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics.

62 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621