Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Low‐temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas

Abstract: Silicon dioxide films were deposited on crystalline silicon substrates by electron cyclotron resonant (ECR) microwave plasma‐enhanced chemical vapor deposition (PECVD). Films were grown on Si〈100〉 substrates at temperatures of 140–600 °C, flow rates of 0.5–10 sccm SiH4, 10–30 sccm O2, and at a pressure of 10−3 Torr. Infrared absorption spectroscopy of the samples indicated no detectable SiH, OH, or SiOH groups. Neither an afterglow chemistry nor He dilution was required to eliminate H impurities as was previously reported for silicon oxide films deposited from rf plasmas. This suggests that significant differences exist between rf and ECR microwave plasma chemistries. We have found that the stoichiometry and index of refraction was not sensitive to oxidant ratio for a wide range of conditions in contrast to other studies. Stoichiometric SiO2 films, with good physical properties, were grown for a much wider range of oxidant ratios relative to those which are characteristic of the rf PECVD technique. In add...

Silicon oxide particles

Abstract: A collection of silicon oxide nanoparticles have an average diameter from about 5 nm to about 100 nm. The collection of silicon oxide nanoparticles effectively include no particles with a diameter greater than about four times the average diameter. The particles generally have a spherical morphology. Methods for producing the nanoparticles involve laser pyrolysis. The silicon oxide nanoparticles are effective for the production of improved polishing compositions including compositions useful for chemical-mechanical polishing.

Semiconductor device and method for manufacturing same

Abstract: A semiconductor device is provided which is capable of improving its reliability by using a material having a high relative dielectric constant as a material for its gate insulating film, by suppressing degradation of an EOT (Equivalent oxide Thickness) and by preventing crystallization of the material having a high relative dielectric constant. The semiconductor device (Field Effect Transistor) has a silicon substrate, a seed layer made up of silicon oxide, a gate insulating film made of amorphous hafnium aliminate and a gate electrode made up of polycrystalline silicon formed the gate insulating film. The gate insulating film is so formed that a hafnium concentration decreases monotonously or step by step, whereas an aluminum concentration increases monotonously or step by step along a direction of a thickness of the gate insulating film from the silicon substrate side toward the gate electrode. In a boundary region between a lower layer side region and an upper layer side region in the gate insulating film, the hafnium and aluminum concentrations change continuously.

Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates

Abstract: A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds. The barrier coating is deposited by the instant method on a temperature sensitive substrate.

Swift heavy ion induced growth of nanocrystalline silicon in silicon oxide

Abstract: Recystallization of nanocrystalline silicon in silicon oxide has been initiated with swift heavy ion irradiation. 100 MeV Ni ions from pelletron were used for irradiating the thin films of silicon oxide (SiOx) at fluences varying from 1×1012 to 5×1013 ions/cm2. Phase separation between silicon and silicon oxide is seen to be responsible for the photoluminescence spectrum peaking around 350 and 610 nm. This spectral nature is understood on the basis of defects and interface states in SiOx matrix and silicon nanocrystals, respectively. The formation of silicon nanocrystals resulting from the phase separation has been confirmed from the complimentary evidence of change in the refractive index, Fourier transform infrared spectroscopy, and energy despersive x-ray analysis. High electronic loss associated with the 100 MeV Ni ions is thought to be responsible for the recrystallization, and rearrangement of silicon.