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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


Papers
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Journal ArticleDOI
01 Jul 2009-EPL
TL;DR: In this article, the three-dimensional imaging of silicon nanoclusters array in silicon-rich silicon oxide layers was evidenced and studied, and the atom probe tomography technique allowed to give the composition of the nan-clusters and their interface with the silica matrix, giving new insights for the understanding of the properties of Si-based photonic devices.
Abstract: Three-dimensional imaging of silicon nanoclusters array in silicon-rich silicon oxide layers was evidenced and studied. The atom probe tomography technique allows to give the composition of the nanoclusters and the composition of the interface with the silica matrix. These results give new insights for the understanding of the properties of Si-based photonic devices.

60 citations

Journal ArticleDOI
TL;DR: The fabrication of nanometric patterns on silicon surfaces by using the parallel-local anodic oxidation technique with soft stamps yields silicon oxide nanostructures 15 nm high, namely at least five times higher than the nanostructure made with local anodic oxidation using atomic force microscopy, and thanks to the size of the stamp enables one to pattern the surface across a centimetre length scale.
Abstract: We investigate the fabrication of nanometric patterns on silicon surfaces by using the parallel-local anodic oxidation technique with soft stamps This method yields silicon oxide nanostructures 15 nm high, namely at least five times higher than the nanostructures made with local anodic oxidation using atomic force microscopy, and thanks to the size of the stamp enables one to pattern the surface across a centimetre length scale To implement this technique, we built a machine to bring the metallized polydimethylsiloxane stamp in contact with the silicon surface, subsequently inserted in a sealed chamber with controlled relative humidity The oxide nanostructures are fabricated when a bias voltage of 36 V is applied between the stamp and the silicon for 2 min, with a relative humidity of 90% The flexibility of the stamp enables a homogeneous conformal contact with the silicon surface, resulting in an excellent reproducibility of the process Moreover, by means of two subsequent oxidations with the same stamp and just rotating the sample, we are able to fabricate complex nanostructures Finally, a detailed study of the oxidation mechanism, also using a finite element analysis, has been performed to understand the underlying mechanism

60 citations

Patent
27 Nov 2001
TL;DR: In this article, the authors describe a method to fabricate the active layer of a semiconductor device by sputtering on the substrate and then forming an amorphous silicon film by low pressure CVD on the silicon oxide film.
Abstract: A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.

60 citations

Journal ArticleDOI
TL;DR: In this paper, a pressure sensor with a 200 µm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized.
Abstract: A pressure sensor with a 200 µm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiNx) and silicon oxide (SiO2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 µm SiNx layer is considered to be an optimized design in terms of small initial central deflection (0.1 µm), relatively high sensitivity (0.6% psi−1) and good linearity within our measurement range.

60 citations

Journal ArticleDOI
TL;DR: In this article, the authors used an electrochemical detector to determine the oxygen permeation barrier of polyethylene terephthalate (PET) films by measuring the carrier gas using an electrostatic detector.
Abstract: Silicon oxide barrier layers are deposited on polyethylene terephthalate as permeation barriers for food packaging applications by means of a low pressure microwave plasma. Hexamethyldisiloxane (HMDSO) and oxygen are used as process gases to deposit SiOx coatings via pulsed low pressure plasmas. The layer composition of the coating is investigated by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy to show correlations with barrier properties of the films. The oxygen permeation barrier is determined by the carrier gas method using an electrochemical detector. The transition from low to high barrier films is mapped by the transition from organic SiOxCyHz layers to quartz-like SiO1.7 films containing silanol bound hydrogen. A residual permeation as low as J = 1 ± 0.3 cm3 m−2 day−1 bar−1 is achieved, which is a good value for food packaging applications. Additionally, the activation energy Ep of oxygen permeation is analysed and a strong increase from Ep = 31.5 kJ mol−1 for SiOx CyHz-like coatings to Ep = 53.7 kJ mol−1 for SiO1.7 films is observed by increasing the oxygen dilution of HMDSO:O2 plasma. The reason for the residual permeation of high barrier films is discussed and coating defects are visualized by capacitively coupled atomic oxygen plasma etching of coated substrates. A defect density of 3000 mm−2 is revealed.

60 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621