Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Study of self-limiting oxidation of silicon nanoclusters by atomistic simulations

Abstract: We present molecular dynamics simulations directed at understanding self-limiting oxidation of nanoclusters. Atomic oxygen is inserted in an atom-by-atom way in the silicon bonds to form silicon oxide. First, we focus on planar oxidation to calibrate our model and test its capabilities. Then, we present results on oxidation of 50 A diam silicon spheres. Kinetic causes of self-limitation are investigated by drawing a map of the local stress in the Si/SiO2 system. We obtain stresses in contrast to in continuum models. For thin oxides, we find in particular tensile pressure in the silicon core and a pressure gradient in the oxide shell. We investigate the effect of pressure gradient on the O2 transport within the framework of Nerst–Eintein’s transport equation. We find that a pressure gradient compatible with experimental estimates yields self-limitation of the oxidation kinetics.

Silicon-silicon oxide-lithium based composite and its manufacturing method as well as negative electrode material for nonaqueous electrolyte secondary battery

Abstract: PROBLEM TO BE SOLVED: To provide a silicon-silicon oxide-lithium based composite containing amorphous silicon and/or microcrystal state silicon, a silicon-silicon oxide-lithium based composite coated by carbon partly fused with this, its manufacturing method as well as a nonaqueous electrolyte secondary battery constituted with this as a negative electrode active material. SOLUTION: This is a silicon-silicon oxide based composite applied with lithium dope, and the silicon-silicon oxide-lithium based composite having a structure that silicon of which the size of the particle is 0.5 to 50 nm is diffused in a silicon oxide in an atom order and/or in a microcrystal state. By using the silicon-silicon oxide-lithium based composite as the negative material for the nonaqueous electrolyte secondary battery, the nonaqueous electrolyte secondary battery which is high in initial efficiency and superior in cycle characteristics can be provided. COPYRIGHT: (C)2008,JPO&INPIT

High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces.

Abstract: High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si^+, Si^(2+), Si^(3+), and Si^(4+) were detected on the Cl-terminated surface, with the highest oxidation state (Si^(4+)) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p_(3/2) peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monolyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH_3-, C_2H_5-, or C_6H_5CH_2-terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed ≈0.20 ML of oxide. This oxide was principally composed of Si+ and Si^(3+) species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p_(3/2) peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si−C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7° vs ≤0.5° off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.

Method of detachable direct bonding at low temperatures

Abstract: A method for detachable bonding that forms an amorphous silicon layer, or a silicon oxide layer with a high hydrogen content, on an element such as a carrier substrate. A second element, such as a substrate, is bonded to the amorphous silicon layer or silicon oxide layer, and the second element may then have a portion removed. A third element, such as a host or carrier substrate, is bonded to the second element or to the remaining portion of the second element to form a bonded structure. The bonded structure is then heated to cause the first element to detach from the bonded structure.

Chemical Approach to Nanofabrication: Modifications of Silicon Surfaces Patterned by Scanning Probe Anodization

Abstract: Scanning probe microscope-induced local oxidation of a material surface with adsorbed water is a recent nanolithographic technology. We applied this technique to the nanoscale patterning of hydrogen-terminated silicon (Si-H) surfaces. Using the silicon oxide (SiO x ) patterns as masking, examples of two types of pattern transfer method through area-selective chemical modification were demonstrated. Nanostructures of substrate Si or deposited gold were fabricated by wet chemical etching or electroless plating, respectively. These area selectivities arose from the difference in surface chemical reactivities between anodic SiO x and the surrounding Si-H. The oxidation chemistry is discussed in terms of anodization.