Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Dielectrically isolated semiconductor devices

Abstract: Dielectrically isolated single crystal silicon of high quality is produced by an extremely convenient process. This process involves the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide. The bodies are contacted so that the silicon oxide is at an interface between the two bodies. The bodies are then heated to an elevated temperature while applying a nominal electrical potential across the interface. This combination of applied potential and temperature permanently fuses the two bodies without producing any significant damage to the crystal quality of these bodies.

Organic light emitting device and manufacturing method thereof

Abstract: PURPOSE: An organic light emitting device and a method for manufacturing the same are provided to improve a moisture preventive property and surface roughness by forming a barrier layer which includes a stack comprising a silicon oxide film and a silicon oxynitride film. CONSTITUTION: A barrier layer is formed on a substrate. A silicon oxynitirde inorganic film is stacked on a silicon oxide inorganic film in order to form the barrier layer. The density of the silicon oxynitride inorganic film is higher than that of the silicon oxide inorganic film. A first electrode is formed on the barrier layer. A second electrode is formed on the first electrode. An organic film is formed between the first electrode and the second electrode.

Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer

Abstract: The energy difference between the oxide and substrate Si 2p peaks for silicon oxide/Si structures increases with the oxide thickness. The dependence of the energy shift on the oxide thickness almost disappears with the deposition of a thin palladium overlayer, because of the avoidance of the surface charging effect due to photoemission and because of the nearly constant energy shift resulting from extra atomic relaxation. The true chemical shift of silicon oxide layers thicker than 2 nm is determined to be ∼3.8 eV. For the thickness dependence of the oxide Si 2p energy, the extra atomic relaxation and charging effect are dominant for oxide layers thinner than ∼2 nm and thicker than ∼4 nm, respectively. In the intermediate thickness region, both the effects are important.

Increases in photovoltage of ‘‘indium tin oxide/silicon oxide/mat‐textured n‐silicon’’ junction solar cells by silicon preoxidation and annealing processes

Abstract: Indium‐tin‐oxide (ITO)/silicon oxide/mat‐textured n‐Si junction solar cells having an energy conversion efficiency of 15% are fabricated by the spray pyrolysis method. Their characteristics and the junction properties are compared with the same junction solar cells having a flat Si surface. In cases where the ITO film is deposited on a hydrofluoric acid‐etched mat‐textured Si surface, the open circuit photovoltage (Voc) is low (405 mV). Scanning electron microscopy observation shows that high‐density dislocations are formed near the Si surface, and the temperature dependence of the current‐voltage characteristics suggests that the trap‐assisted multistep tunneling through the Si depletion layer is a dominant current flow mechanism. In cases where the ITO film is deposited on a thermal silicon oxide‐covered mat‐textured Si surface, the formation of the dislocations is suppressed, and consequently Voc is increased to 485 mV. For this solar cell, a surface recombination current takes the dominant part of the dark current in the bias region below ∼250 mV, and a thermionic‐assisted tunneling current is dominant in the higher bias region. For a cell where the thermal silicon oxide‐covered mat‐textured Si surface is annealed at 800 °C under nitrogen before the deposition of the ITO film, Voc is further increased to 540 mV, and the energy conversion efficiency of 15% is achieved. In this case, the thermionic‐assisted tunneling current density is decreased by an increase in the barrier height due probably to a reduction in the density of the positive charge in the silicon oxide layer. The surface recombination current density is also reduced by the removal of interface states, leading to the improvement of the fill factor.