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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


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Patent
30 Oct 2017
TL;DR: In this article, a method for forming a forming a semiconductor structure is disclosed, which may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si 1-x Ge x ) seed layer directly on the silicon oxide, and depositing an intermediate silicon Germanium seed layer.
Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si 1-x Ge x ) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si 1-x Ge x ) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si 1-x Ge x ) seed layer are also disclosed.

56 citations

Patent
29 May 2007
TL;DR: In this paper, the authors describe the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first layer to reduce the carbon content in the layer.
Abstract: Methods of filling a gap on a substrate with silicon oxide are described. The methods may include the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first silicon oxide layer to reduce the carbon content in the layer. The methods may also include forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the second layer. The silicon oxide layers are annealed after the gap is filled.

56 citations

Patent
11 Jul 2000
TL;DR: In this article, a method for deposition of an insulation layer on a substrate, disposed the substrate on a heater inside a chamber, including the method the following steps: heating the heater inside the chamber to 500 DEG C; charging pressure of the chamber with oxygen and silicon; introduction of silicon oxide film on he substrate on the heater and under the temperature.
Abstract: Method for deposition of an insulation layer on a substrate, disposed the substrate on a heater inside a chamber, including the method the following steps: heating the heater inside a chamber to 500 DEG C; charging pressure of the chamber to between 10 and 760 torr; introduction of oxygen and silicon into the chamber for deposition of a layer of silicon oxide film on he substrate on the heater and under the temperature.

56 citations

Patent
09 Aug 2002
TL;DR: In this article, a method for producing non-magnetic particles of an oxide such as cerium oxide, zirconium oxide and aluminum oxide has been proposed, which is extremely reduced in sintering or coagulation, and exhibits good crystallinity.
Abstract: Non-magnetic particles, in particular, of an oxide such as cerium oxide, zirconium oxide, aluminum oxide, silicon oxide or iron oxide which have the shape of a plate and have an average particle diameter in the direction of the plate surface in a range of 10 to 100 nm; and a method for producing the above non-magnetic particles of the oxide which comprises adding a salt of the above element to an aqueous alkaline solution to provide a hydroxide or hydrate thereof, heating the hydroxide or hydrate in the presence of water at a temperature in the range of 110 to 300 ˚ C, followed by filtration and drying, and further heating the resultant product in air at a temperature in the range of 300 to 1200 ˚ C, to thereby produce particles of the oxide. The above non-magnetic particles, in particular, of on oxide has a narrow distribution of particle diameter, is extremely reduced in sintering or coagulation, and exhibits good crystallinity.

56 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621