Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

High aspect ratio shallow trench using silicon implanted oxide

Abstract: A trench is etched through the layers of pad oxide and silicon nitride that have been deposited on a substrate, the patterned layer of photoresist is left in place. A tilt angle nitrogen implant is performed into the surface of the substrate, a deep shallow STI trench is etched into the surface of the substrate. An oxygen implant of moderate intensity is performed in the created STI trench, the photoresist is removed. An anneal is performed on the implanted oxygen. A liner oxide is grown within the opening, High Density Plasma (HDP) oxide is deposited inside the opening and the top surface of the remaining silicon oxide. CMP is performed to the surface of the HDP oxide down to the surface of the pad oxide that completes the formation of the STI region under the first embodiment of the invention. The invention can be further extended by creating a LOCOS layer at the bottom of the STI opening or by further etching the bottom of the STI opening. Both extensions are to be implemented prior to growing the oxide liner.

Atomic layer deposited zirconium silicon oxide films

Abstract: A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include forming zirconium silicates as dielectric layers in devices in an integrated circuit. In an embodiment, a zirconium silicon oxide film is formed by atomic layer deposition using a zirconium precursor containing silicon and a silicon precursor. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing an atomic layer deposited zirconium silicon oxide film, and methods for forming such structures.

Interlayer insulation of TFT LCD device having of silicon oxide and silicon nitride

Abstract: There is disclosed a lightweight and small liquid crystal display which achieves low power consumption and in which the optical anisotropy of the liquid crystal material is compensated for in order to enhance the viewing angle characteristics and the response speed of the liquid crystal material. Display electrodes and a common electrode are formed on one of the substrates. The orientation of the liquid crystal material is of the HAN (hybrid alignment nematic) type. This compensates for the optical anisotropy of the liquid crystal material and improves the response speed.

Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof

Abstract: Ultra thin organo-ceramic and metal oxide films are prepared under room temperature and atmospheric conditions by exposing α,ω-functional siloxane oligomers and fatty acid metal soaps, respectively, to a combination of ultraviolet light (UV) and ozone (O3). The process includes the steps of preparing ultra thin α,ω-functional polysiloxane and fatty acid metal soap films using, but not limited to, the Langmuir-Blodgett (LB) technique. The LB technique permits construction of molecular monolayer or multilayer films on a variety of substrates. By using carboxylic acid end groups on the siloxane oligomers, metal ions can be incorporated into the SiOx film after UV-ozone exposure. This technique can be used to make electronically, optically, and chemically important organo-ceramic and metal oxide films on temperature sensitive substrates.