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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


Papers
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Patent
24 Aug 2000
TL;DR: Carbon-doped silicon oxide films (SiC x O y ) produced by CVD of an organosilane gas containing at least one silicon carbon bond, are rapidly densified by exposure to ultraviolet radiation.
Abstract: Carbon-doped silicon oxide films (SiC x O y ) produced by CVD of an organosilane gas containing at least one silicon carbon bond, are rapidly densified by exposure to ultraviolet radiation. UV radiation exposure disrupts undesirable chemical bonds (such as Si—OH) present in the carbon-doped silicon oxide following deposition, replacing these bonds with more desirable chemical bonds characteristic of an ordered silicon oxide lattice. As a result of radiation exposure and the chemical bond replacement, gases such as water vapor are evolved and removed, producing a densified and stable carbon-doped silicon oxide film. Densification utilizing ultraviolet radiation is particularly useful because softness and fragility of freshly-deposited (SiC x O y ) films may preclude insertion and removal of coated substrates from conventional batch loaded thermal annealing chambers.

220 citations

Journal ArticleDOI
TL;DR: This research presents a novel, scalable, scalable and scalable approaches that can be scaled up and implemented in the field of nanotechnology with real-time, low-cost materials engineering.
Abstract: [*] Prof. C. A. Mirkin, J.-H. Lim, D. S. Ginger, K.-B. Lee, J. Heo, J.-M. Nam Department of Chemistry and Institute for Nanotechnology Northwestern University 2145 Sheridan Road, Evanston, IL 60208-3113 (USA) Fax: (+1)847-467-5123 E-mail: camirkin@chem.northwestern.edu [**] C.A.M. acknowledges the AFOSR, DARPA, and NSF for support of this research. D.S.G. thanks the NIH for an NRSA Postdoctoral Fellowship (1 F32 HG02463). Angewandte Chemie

218 citations

Patent
Kent Rossman1
08 Feb 2001
TL;DR: In this paper, the authors present a method of depositing an improved seasoning film on a substrate prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber.
Abstract: Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (Si n H 2n+2 ) process gas and/or is deposited from a plasma having a density of at least 1×10 11 ions/cm 3 .

218 citations

Patent
06 Aug 2010
TL;DR: In this article, a method of forming a silicon oxide layer is described, which may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon and/or nitrogen containing layer on a substrate.
Abstract: A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.

216 citations

Patent
03 Jun 2009
TL;DR: In this paper, the method of forming silicon nitride, silicon oxynitride, carbon-doped silicon oxide, silicon oxide and carbon-deposition of carbon dioxide at low deposition temperatures is described.
Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

215 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621