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Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a rational approach for fabricating multilevel silicon-based nanostructures via scanning probe oxidation (SPO) and anisotropic wet etching was described.
Abstract: A rational approach is described for fabricating multilevel silicon-based nanostructures via scanning probe oxidation (SPO) and anisotropic wet etching. Using silicon oxide nanopatterns on Si(100) and Si(110) surfaces created by SPO as masks, two-dimensional (2D) nanostructures with high aspect ratio and a variety of patterns can be formed by anisotropic wet etching with KOH. By employing a mixture of KOH solutions and isopropyl alcohol (IPA) as an alternative to KOH alone, control of the morphology of the etched silicon surfaces, crucial for further fabrication, was greatly improved. The SPO and etching processes can be continually repeated on the 2D nanostructures, permitting the formation of various multilevel silicon-based nanostructures, including a T-gate structure useful for electronic circuitry. In addition, these multilevel silicon structures can be used as nanoimprint moulds for their rapid replication.

53 citations

Journal ArticleDOI
TL;DR: In this paper, the chemical oxidation of hydrogen-terminated silicon surfaces in water was studied in situ with Fourier transform IR spectroscopy in the multiple total internal reflection mode, and it was concluded that reactions involving the oxidation of silicon hydride and the formation of silicon oxide are coupled.
Abstract: The chemical oxidation of hydrogen‐terminated silicon (111) surfaces in water was studied in situ with Fourier transform IR spectroscopy in the multiple total internal reflection mode. On the basis of measurements of the absorbance of the Si‐H and Si‐O‐Si vibrations as a function of time it is concluded that reactions involving the oxidation of silicon hydride and the formation of silicon oxide are coupled. The decrease in the hydride coverage and increase in the oxide coverage are linear functions of ln(t). The time dependence of oxide growth is explained in terms of electrostatic and mechanical changes at the Si/water interface.

53 citations

Patent
14 Jan 1999
TL;DR: In this article, the authors proposed a coating solution for forming a covered film capable of forming a highly refractive index film having colorless transparency and high refractive indices, and further excellent in resistance to hot water, resistance to sweat, weatherability, light resistance, abrasion resistance, wear resistance, impact resistance, flexibility and dyeability, and adhesiveness with a base material.
Abstract: PROBLEM TO BE SOLVED: To provide a coating solution for forming a covered film capable of forming a highly refractive index film having colorless transparency and high refractive index, and further excellent in resistance to hot water, resistance to sweat, weatherability, light resistance, abrasion resistance, wear resistance, impact resistance, flexibility and dyeability, and adhesiveness with a base material. SOLUTION: This coating solution contains complex oxide fine particles and a matrix. The complex oxide fine particles are composed of (i) nucleus particles and (ii) a covering layer covering the nucleus particles and each of the nucleus particles (i) is composed of an oxide of titanium and tin, or a complex solid solution oxide having a rutile-type structure, then the covering layer (ii) is composed of a complex oxide of a silicon oxide and an oxide of zirconium and/or aluminum.

53 citations

Patent
05 Mar 1993
TL;DR: In this article, the problem of deterioration of step coverage was solved by forming a thin-film semiconductor, which has a crystal semiconductor region and a not-crystalline region, on a substrate, and forming a gate insulating film to cover the thin-filtered semiconductor.
Abstract: PURPOSE:To remove the problem of deterioration of step coverage by forming a thin-film semiconductor, which has a crystal semiconductor region and a not crystal semiconductor region, on a substrate, and forming a gate insulating film to cover the thin-film semiconductor, and forming a gate electrode thereon, which crosses the crystal semiconductor region. CONSTITUTION:A base film 21 of silicon oxide is formed on a substrate 20, and further an amorphous silicon film 22 is stacked. Continuously, regions 23a and 23b are formed by stacking and patterning a silicon nickel film, and then, crystallized regions 24a and 24b are formed selectively by annealing them thereby crystallizing them. Next, a silicon oxide film 25 is stacked as a gate insulating film. Successively, a silicon film is deposited and patterned to form wirings 26a and 26b. Impurity regions 27a and 27b are formed by implanting phosphorus into the silicon region, with the wiring 26b as a mask, and wirings 29a and 29b are formed of metallic materials. That is, this does not have an island- shaped semiconductor region, the step coverage does not become the least problem.

53 citations

Patent
19 May 1992
TL;DR: In this paper, a method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices is described.
Abstract: A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer (3) surface to remove organics, followed by vapor phase etching. An integrated apparatus (1) for cleaning organic and, subsequently, vapor phase etching, is also described.

53 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202323
202253
2021199
2020524
2019649
2018621