Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein

Abstract: A metal-oxide-semiconductor (MOS) structure with a buried monolayer of ferritin cores in the SiO2 layer was fabricated and the electron confinement in the cores was confirmed. A monolayer of ferritin molecule was adsorbed on the thermal silicon oxide layer. After the protein of the monolayer was eliminated, the ferrihydrite cores were buried in the silicon dioxide layer. We reduced the cores to conductive iron metal nanodots by low-temperature annealing. X-ray photoelectron spectroscopy and electron-energy-loss spectroscopy measurements confirmed the reduction of the cores. The MOS capacitance with the iron nanodots showed hysteresis in the capacitance-voltage measurement, indicating the charging and discharging behavior in iron nanodots.

Deposition of low dielectric constant thin film without use of an oxidizer

Abstract: An organic precursor compound is gasified and fed into the reaction chamber of a high density plasma chemical vapor deposition (HDP-CVD) reactor. The organic precursor comprises silicon, oxygen and carbon atoms. No reactive oxygen gas or other oxidizer is used in the reaction chamber. A thin film of carbon-containing low dielectric constant silicon oxide material is deposited and simultaneously etched in the reaction chamber to fill a gap having a high aspect ratio with low dielectric constant insulator material.

Ion bombardment induced changes in silicon dioxide surface composition studied by x‐ray photoelectron spectroscopy

Abstract: A model for the quantitative analysis of silicon oxide using x‐ray photoelectron spectroscopy (XPS) peak intensities is developed. This model is shown to have a precision of <5% in predicting the O/Si ratio within the XPS sampled volume. He+, Ne+, Ar+, and Xe+ bombardment of SiO2 are studied using this model. Results indicate that oxygen is preferentially depleted as a result of sputtering. Although elemental Si was not spectrally detected due to measurement noise and overlayer contamination, an equivalent upper limit to the elemental Si thickness of ∼2 A is determined for Ne+, Ar+, and Xe+; He+ results in about 4 A of elemental Si.

Role of alkali metal promoter in enhancing lateral growth of monolayer transition metal dichalcogenides

Abstract: Synthesis of monolayer transition metal dichalcogenides (TMDs) via chemical vapor deposition relies on several factors such as precursor, promoter, substrate, and surface treatment of substrate. Among them, the use of promoter is crucial for obtaining uniform and large-area monolayer TMDs. Although promoters have been speculated to enhance adhesion of precursors to the substrate, their precise role in the growth mechanism has rarely been discussed. Here, we report the role of alkali metal promoter in growing monolayer TMDs. The growth occurred via the formation of sodium metal oxides which prevent the evaporation of metal precursor. Furthermore, the silicon oxide substrate helped to decrease the Gibbs free energy by forming sodium silicon oxide compounds. The resulting sodium metal oxide was anchored within such concavities created by corrosion of silicon oxide. Consequently, the wettability of the precursors to silicon oxide was improved, leading to enhance lateral growth of monolayer TMDs.