Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Semiconductor device with insulating isolation groove

Abstract: A semiconductor device comprising an insulating isolation groove which comprises a groove in a substrate, an insulating film on the inner surface of the groove, a polycrystal silicon film and a boron phosphosilicate glass film in order embedded within the groove, and a silicon oxide film on the boron phosphosilicate glass film. Since the polycrystal silicon film and boron phosphosilicate glass film are embedded within the groove, the crystal defect due to thermal expansion does not occur. And, since it is not necessary to oxidize the surface of the polycrystal silicon film within the groove, deformation due to an increased build-up at the time of oxidation does not occur.

Semiconductor device and method of manufacturing the same

Abstract: A semiconductor device according to the present invention includes a memory region in which a memory cell array is formed of non-volatile memory devices arranged in a matrix of a plurality of rows and columns. Each of the nonvolatile memory devices includes a word gate formed over a semiconductor layer with a gate insulating layer interposed in between, impurity layers formed in the semiconductor layer, and sidewall-shaped control gates formed along both side surfaces of the word gate. The control gate includes a first control gate and a second control gate which are adjacent to each other. The first control gate is formed on a first insulating layer formed of a first silicon oxide film, a silicon nitride film, and a second silicon oxide film. The second control gate is formed on a second insulating layer formed of a silicon oxide film.

Deposition of Si-DLC film and its microstructural, tribological and corrosion properties

Abstract: Silicon-incorporated diamond-like carbon (Si-DLC) films were deposited using a bipolar-type plasma based ion implantation and deposition technique, and the effects of Si-incorporation on the microstructural, tribological, anti-corrosion and lubricant bonding properties of the Si-DLC films were investigated. The analysis of Raman spectroscopy exhibited that the sp3 bonds in the DLC film increase due to Si addition. XPS analysis revealed that a thick oxide layer exists on the Si-DLC film surfaces. These explain the high lubricant bonding properties of the Si-DLC films compared to that of the Si-free DLC films. The silicon oxide layer on the Si-DLC film and the transferred silicon oxide layer on the steel ball prevents from the metal/DLC contact between the Si-DLC film and steel ball when sliding, which results in a low friction. Incorporation of Si in DLC films led to significant improvements in the corrosion resistance due to low internal stress and thick insulating oxide layer.

Atomic-layer-deposited transparent electrodes for silicon heterojunction solar cells

Abstract: We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.

Lanthanum Oxide-Based Dielectrics for Integrated Circuit Capacitors

Abstract: Lanthanum oxide-based gate dielectrics are provided for integrated circuit field effect transistors. The gate dielectrics may include lanthanum oxide, preferably amorphous lanthanum oxide and/or an alloy of lanthanum oxide and silicon oxide, such as lanthanum silicate (La 2 SiO 5 ). Lanthanum oxide-based gate dielectrics may be fabricated by evaporating lanthanum on a silicon surface of an integrated circuit substrate. The lanthanum may be evaporated in the presence of oxygen. Lanthanum and silicon may be co-evaporated. An anneal then may be performed. Lanthanum oxide-based dielectrics also may be used for integrated circuit capacitors.