Topic
Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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Patent•
23 May 2007TL;DR: In this article, a silicon oxide layer is deposited on a substrate by chemical vapor deposition (CVD) by reacting an organoaminosilane precursor, selected from specified categories, with an oxidizing agent under conditions for the formation of a silicon dioxide film.
Abstract: A silicon oxide layer is deposited on a substrate by chemical vapor deposition (CVD) by reacting an organoaminosilane precursor, selected from specified categories, with an oxidizing agent under conditions for the formation of a silicon oxide film. Diisopropylaminosilane is the preferred organoaminosilane precursor for the formation of the silicon oxide film.
190 citations
Patent•
31 Aug 2004TL;DR: In this article, an aluminum oxide/silicon oxide laminate film is formed by sequentially exposing a substrate to an organo-aluminum catalyst to form a monolayer over the surface, and remote plasmas of oxygen and nitrogen to convert the organoaluminum layer to a porous aluminum oxide layer, and a silanol precursor to create a thick layer of silicon dioxide over the porous oxide layer.
Abstract: Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide/silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of oxygen and nitrogen to convert the organoaluminum layer to a porous aluminum oxide layer, and a silanol precursor to form a thick layer of silicon dioxide over the porous oxide layer. The process provides an increased rate of deposition of the silicon dioxide, with each cycle producing a thick layer of silicon dioxide of about 120 Å over the layer of porous aluminum oxide.
189 citations
TL;DR: In this paper, various perfluorosulfonic acid membranes (PFSAs) were studied as pure and silicon oxide composite membranes for operation in hydrogen/oxygen proton exchange membrane fuel cells (PEMFCs) from 80 to 140°C.
189 citations
Patent•
05 Jun 1992
TL;DR: In this paper, a chemical vapor deposition method for forming a fluorine-containing silicon oxide film was proposed, which involves introducing a gaseous mixture of alkoxysilane or its polymers as a source gas with fluoroalkoxysilicane added thereto into a reaction chamber and performing decomposition of the gaseusous mixture to deposit the fluorine containing silicon oxide on a substrate.
Abstract: A chemical vapor deposition method for forming a fluorine-containing silicon oxide film comprises introducing a gaseous mixture of alkoxysilane or its polymers as a source gas with fluoroalkoxysilane added thereto into a reaction chamber and performing decomposition of the gaseous mixture to deposit the fluorine-containing silicon oxide film onto a substrate. During the formation of the fluorine-containing silicon oxide film, at least one of compounds containing phosphorus or boron such as organic phosphorus compounds and organic boron compounds may be evaporated and introduced into said gaseous mixture, thereby adding at least one of phosphorus and boron to said fluorine-containing silicon oxide film. The fluorine-containing oxide film may be formed by effecting the decomposition of the gaseous mixture in the presence of ozone gas, or under ultraviolet radiation, or gas plasma.
188 citations
TL;DR: Fluorescence interference-contrast (FLIC) microscopy is a powerful new technique to measure vertical distances from reflective surfaces and the distance of a membrane-bound protein from the membrane surface was measured, indicating an upright orientation of the rod-shaped t-SNARE/v- SNARE complex from the membranes surface.
188 citations