Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature

Abstract: A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines.

Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide

Abstract: A new interlayer dielectric film using fluorine-doped silicon oxide (SiOF) for multilevel interconnection of very large scale integration (VLSI) has been fabricated The film is deposited by a simple technique, which is hexafluoroethane ( C2F6) addition to conventional tetraethoxysilane (TEOS)-based plasma-enhanced chemical vapor deposition (PE-CVD) Si–F bond formation in the film is detected by chemical bonding structural studies using Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) Low dielectric constants caused by Si–F bond formation and good gap-filling ability due to in situ etching by C2F6 plasma are obtained Therefore, SiOF film has very high applicability as an interlayer dielectric film for advanced VLSI devices

Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films

Abstract: Silicon-rich silicon oxide thin films have been prepared by thermal evaporation of silicon monoxide in vacuum. The SiOx film composition (1.1⩽ x ⩽1.7) has been controlled by varying the deposition rate and residual pressure in the chamber. Long time stability of all films has been ensured by a postdeposition annealing at 523 K for 30 min in Ar atmosphere. Some films were further annealed at 973 K and some others at 1303 K. Raman scattering measurements have implied the formation of amorphous silicon nanoparticles in films annealed at 973 K and Si nanocrystals in films annealed at 1303 K. The latter conclusion is strongly supported by high resolution electron microscopy studies which show a high density of Si nanocrystals in these films. Photoluminescence has been observed from both amorphous and crystalline nanoparticles and interpreted in terms of band-to-band recombination in the nanoparticles having average size greater than 2.5 nm and carrier recombination through defect states in smaller nanoparticles.

Fabrication method of semiconductor integrated circuit device

Abstract: The following defects are suppressed: when an interlayer insulating film including a silicon carbide film and an organic insulating film is dry-etched to form interconnection grooves over underlying Cu interconnections, an insulating reactant adheres to the surface of the underlying Cu interconnections exposed to the bottom of the interconnection grooves, or the silicon carbide film or the organic insulating film exposed to the side walls of the interconnection grooves are side-etched When a lamination film made of a silicon oxide film, an organic insulating film, a silicon oxide film, an organic insulating film and a silicon carbide film is dry-etched to form interconnection grooves over Cu interconnections, a mixed gas of SF 6 and NH 3 is used as an etching gas for the silicon carbide film to work side walls of the interconnection grooves perpendicularly and further suppress defects that a deposit or a reactant adheres to the surface of the Cu interconnections exposed to the bottom of the interconnection grooves

Oxide mediated epitaxy of CoSi2 on silicon

Abstract: Uniform, single‐crystal CoSi2 layers have been grown on Si by the technique of oxide mediated epitaxy (OME). Deposition of a thin layer of cobalt (1–3 nm) onto surfaces covered with a thin silicon oxide layer and annealing at 500–700 °C led to the growth of epitaxial, essentially uniform, CoSi2 layers on the (100), (110), and (111) surfaces of Si. The nucleation and growth of silicide apparently occurred subsurface, leaving the silicon oxide layer largely on the surface of the silicide after the growth. On all surfaces, thicker (10–30 nm), excellent quality, CoSi2 single‐crystal thin films have been grown by repeated growth sequences. Experimental results are presented along with a discussion on the possible roles played by the thin oxide layer in promoting the epitaxial growth of silicide.