Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Forming multi-layered interconnections with fluorine compound treatment permitting selective deposition of insulator

Abstract: A method of manufacturing a semiconductor device, incorporates the steps of: performing reactive ion etching using a fluorine compound gas to surface-treat the lower level wirings which permits selective deposition of the second silicon oxide film; selectively depositing a second silicon oxide film between said lower level wirings by a CVD method using an organic silicon compound gas and an oxidizable gas as source gases; depositing a third silicon oxide film on an entire surface and forming through holes connected to the lower wirings; and forming upper level wirings connected to the lower level wirings. Further, an additional silicon oxide film can be deposited on the major surface so as to form a side wall thereof on the lower level wirings. The reactive ion etching is then performed.

Formation of silicon oxide over gold layers on silicon substrates

Abstract: When a single‐crystal substrate of silicon is covered with evaporated gold and heated at relatively low temperatures (100–300°C) in an oxidizing atmosphere, a silicon‐dioxide layer is readily formed over the gold layer. The mechanism and factors controlling this low‐temperature oxide formation have been investigated using backscattering of 2‐MeV He+ ions. The oxide layer is nonuniform in thickness and the initial growth of this layer is proportional to (time)1/2. Both oxidizing ambient and orientation of the substrate influence the growth rate, and the amount of gold determines the final thickness of oxide. A model is proposed to explain the oxide‐growth mechanism.

Method of depositing silicon oxide films

Abstract: Methods of depositing a silicon oxide film are disclosed. One embodiment is a plasma enhanced atomic layer deposition (PEALD) process that includes supplying a vapor phase silicon precursor, such as a diaminosilane compound, to a substrate, and supplying oxygen plasma to the substrate. Another embodiment is a pulsed hybrid method between atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the other embodiment, a vapor phase silicon precursor, such as a diaminosilane compound, is supplied to a substrate while ozone gas is continuously or discontinuously supplied to the substrate.

Towards the First Silicon Laser

Abstract: Preface. Photograph of Participants. Introduction. Part I: Light emitting diodes. High efficiency silicon light emitting diodes M.A. Green, et al. Dislocation-based silicon light emitting devices M.A. Lourenco, et al. Efficient electroluminescence in alloyed silicon diodes O.B. Gusev, et al. Light emitting devices based on silicon nanocrystals A. Irrera, et al. Optical and electrical characteristics of LEDs fabricated from Si-nanocrystals embedded in SiO2 B. Garrido, et al. Electroluminescence in Si/SiO2 Layers L. Heikkilo, et al. Reverse biased porous silicon light emitting diodes S. Lazarouk. Strong blue light emission from ion implanted Si/SiO2 structures W. Skorupa, et al. Si/Ge nanostructures for LED G.E. Cirlin, et al. Part II: Silicon nanocrystals. Optical spectroscopy of single silicon quantum dots J. Valenta, et al. Luminescence from Si/SiO2 nanostructures Y. Kanemitsu. Electronic and dielectric properties of porous silicon D. Kovalev, J. Diener. Silicon technology used for size-controlled silicon nanocrystals M. Zacharias, et al. Structural and optical properties of silicon nanocrystals embedded in Silicon Oxide films M. Miu, et al. Part III: Optical gain in silicon nanocrystals. Stimulated emission in silicon nanocrystals L. Dal Negro, et al. Lasing effects in ultrasmall silicon nanoparticles M.H. Nayfeh. On fast optical gain in silicon nanostructures L. Khriachtchev, M. Rasanen. Experimental observation of optical amplification in silicon nanocrystals M. Ivanda, et al. Optical amplification in nanocrystalline silicon superlattices P.M. Fauchet, Jinhao Ruan.Optical gain from silicon nanocrystals: a critical perspective A. Polman, R.G. Elliman. Optical gain measurements with variable stripe length technique J. Valenta, et al. Part IV: Theory of silicon nanocrystals. Theory of silicon nanocrystals C. Delerue, et al. Gain theory and models in silicon nanostructures S. Ossicini, et al. Part V: Silicon/Germanium quantum dots and quantum cascade structures. Si-Ge quantum dot laser: What can we learn from III-V experience? N.N. Ledentsov. Promising SiGe superlattice and quantum well laser candidates G. Sun, et al. Optical properties of arrays of Ge/Si quantum dots in electric field A.V. Dvurechenskii, A.I. Yakimov. MBE of Si-Ge heterostructures with Ge nanocrystals P.P. Pchelyakov, et al. Strain compensated Si/SiGe quantum cascade emitters grown on SiGe pseudosubstrates L. Diehl, et al. Part VI: Terahertz silicon laser. Terahertz silicon laser: Intracenter optical pumping S.G. Pavlov, et al. Silicon lasers based on shallow donor centers: Theoretical background and experimental results V.N. Shastin, et al. Resonant states in modulation doped SiGe Heterostructures as a source of THz lasing A.A. Prokofiev, et al. THz lasing of strained p-Ge and Si/Ge structures M.S. Kagan. Terahertz emission from Silicon-Germanium quantum cascade R.W Kelsall, et al. Part VII: Optical gain in Er doped Si nanocrystals. Towards an Er-doped Si nanocrystal sensitized waveguide laser: The thin line between gain and loss P.G. Kik, A. Polman. Optical gain using nanocrystal sensitized Erbium Jung H. Shin, et al. Excitation mechanism of Er photoluminescence in bulk Si and SiO2 with nanocryst

Semiconductor device having STI without divot and its manufacture

Abstract: The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window; depositing a second silicon nitride film covering an inner surface of the isolation trench; forming a first silicon oxide film burying the isolation trench; etching and removing the first silicon oxide film in an upper region of the isolation trench; etching and removing the exposed second silicon nitride film; chemical-mechanical-polishing the second silicon oxide film; and etching and removing the exposed first silicon nitride film.