Topic
Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
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Patent•
22 Sep 1998
TL;DR: In this article, the authors proposed a method of film formation in which a silicon oxide film (a NSG film: a Non-doped Silicate Glass) is formed on a substrate having a recess by a CVD method using a mixed gas containing TEOS and ozone.
Abstract: This invention relates to a method of film formation in which, when a silicon oxide film (a NSG film: a Non-doped Silicate Glass) is formed on a substrate having a recess by a CVD method using a mixed gas containing TEOS and ozone, surface dependency on the substrate is eliminated to embed a silicon oxide film into the recess of the surface. The invention includes forming a phosphorus containing insulating film as a base layer on the surface of a substrate and forming a silicon-containing insulating film on the phosphosilicate glass film by the chemical vapor deposition method, using a mixture of a ozone-containing gas and a silicon-containing gas.
167 citations
Patent•
11 Mar 2003TL;DR: In this article, a gate is formed between two impurity regions in a semiconductor substrate, and a gate electrode is formed on the gate insulating film, and then a silicon oxide film is created on the side of the gate electrode.
Abstract: A semiconductor device has a pair of impurity regions in a semiconductor substrate. A silicon layer is formed on the impurity region. A gate insulating film is formed between the impurity regions. A gate electrode is formed on the gate insulating film. A first silicon nitride film is formed on the gate electrode. A silicon oxide film is formed on a side surface of the gate electrode. A second silicon nitride film is partially formed on the silicon layer and on a side surface of the silicon oxide film. A conductive layer is formed on the silicon layer.
167 citations
TL;DR: The integration of electronic circuitry and neuronal networks requires a bidirectional electrical communication between silicon elements and nerve cells and the successful assembly of a neuron-to-silicon junction is reported with direct signal transfer from an individual neuron to a microscopic metal-free fieldeffect transistor.
Abstract: An identified nerve cell of the leech is attached to a planar silicon microstructure of p-doped silicon covered by a thin layer of insulating silicon oxide. A voltage step, applied between silicon and electrolyte, induces a capacitive transient in the cell which elicits an action potential. The capacitive extracellular stimulation is described by an equivalent electrical four-pole.
166 citations
Patent•
04 May 1999TL;DR: In this article, a low dielectric constant (LDC) film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process.
Abstract: A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.
166 citations
TL;DR: In this article, Braun et al. present a survey of the state of the art in the field of bioinformatics with respect to the use of artificial neural networks (ANNs).
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165 citations