Topic
Silicon oxide
About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.
Papers published on a yearly basis
Papers
More filters
Patent•
NEC1
TL;DR: In this paper, a semiconductor device formed at a substrate surface region is coated with a non-doped CVD silicon oxide film, and an interlayer insulating film composed of a BPSG film, a first ozone-TEOS NSG film and a second ozone -TEOS NG film is formed on the Silicon oxide film.
Abstract: A semiconductor device formed at a substrate surface region is coated with a non-doped CVD silicon oxide film, and an interlayer insulating film composed of a BPSG film, a first ozone-TEOS NSG film and a second ozone-TEOS NSG film is formed on the silicon oxide film. The BPSG film has a thickness of not less than 50 nm but not greater than 200 nm, and is heat-treated at a temperature of not lower than 700° C. but not higher than 800° C. In addition, the first and second zone-TEOS NSG films are also heat-treated at a temperature of not lower than 700° C. but not higher than 800° C.
148 citations
Patent•
28 Feb 2014
TL;DR: In this paper, methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided.
Abstract: Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power.
148 citations
TL;DR: In this article, an atomic transport in thermal growth of thin and ultrathin silicon oxide, nitride, and oxynitride films on Si is reviewed and the physico-chemical constitution of the involved surfaces and interfaces for each different dielectric material, as well as complementary studies of the gas, gas-surface, and solid phase chemistry.
148 citations
Patent•
26 Feb 2004TL;DR: In this article, the nitrogen element in silicon nitride diffuses into the semiconductor layer made of active polycrystalline silicon to compensate for lattice strain of the active poly-crystallines silicon film, to satisfy the desired quality of the interface between the semiconductors and the insulating layer.
Abstract: The present invention provides a semiconductor device capable of preventing deterioration in carrier mobility of a semiconductor layer, which is a quality of the interface between the semiconductor layer and an insulating layer, and a method of manufacturing the semiconductor device. In the semiconductor device, an interface layer is provided between a semiconductor layer made of active polycrystalline silicon and an insulating layer made of silicon oxide. The nitrogen element in silicon nitride diffuses into the semiconductor layer made of active polycrystalline silicon to compensate for lattice strain of the active polycrystalline silicon film, to satisfy the desired quality of the interface between the semiconductor layer and the insulating layer.
147 citations
03 May 2013
TL;DR: In this paper, low temperature silicon oxide (SiO2) with improved electrical properties and excellent film step-coverage was investigated, and the wet etch rate was controllable as a function of DENSIFICAION time due to repairing of the SiO2 network defects by the oxygen radicals.
Abstract: We have researched low temperature silicon oxide (SiO2) with improved electrical properties and excellent film step-coverage. In-situ O2 plasma densification (DENSIFICATION) effect on SiO2 that has been deposited by PE-ALD at temperature (<400°C) was investigated. The wet etch rate was controllable as a function of DENSIFICAION time due to repairing of the SiO2 network defects by the oxygen radicals. Angle Resolved X-ray Photoelectron Spectroscopy (AR-XPS) analysis was carried out to observe the core-level binding energies shifts (chemical shifts) in the different SiO2 films. The characteristics of wet etch rate of high quality low temperature SiO2 demonstrated lower than high temperature LP-CVD SiO2 values. Compared to LP-CVD SiO2, PE-ALD SiO2 with DENSIFICATION showed excellent I-V characteristics with lower leakage current and similar to the thermal SiO2 carrier transport plot.
147 citations