Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Method of forming insulation layer in semiconductor devices for controlling the composition and the doping concentration

Abstract: The present invention relates to a method of forming an insulating film in a semiconductor device by which the composition and the doping concentration of oxide are controlled using an atomic layer deposition method. In case of silicon oxide, a thermal oxidization process and a deposition process are sequentially performed to form an oxide film having a good interface characteristic and the deposition speed. On the other hand, in case of depositing an oxide film, an oxynitride film and a metal oxide film, the pulse construction and the supply time of a source and radical are adjusted to form an optimum oxide film having a good interface characteristic.

Two silicon-containing precursors for gapfill enhancing dielectric liner

Abstract: Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

Method of forming interlayer insulating film

Abstract: A material containing, as a main component, an organic silicon compound represented by the following general formula: R.sup.1.sub.x Si(OR.sup.2).sub.4-x (where R 1 is a phenyl group or a vinyl group; R 2 is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R 1 is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R 1 is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

Effect of Solvents and Concentration on the Formation of a Self-Assembled Monolayer of Octadecylsiloxane on Silicon (001)

Abstract: We have explored the effects of solvent, adsorber concentration, and environment on the formation of high-coverage monolayers of alkylsiloxanes on silicon oxide surfaces from alkylsiloxane solutions. Specifically, we have varied the solvent polarity and the concentration of octadecyltrichlorosilane (OTS) used for the deposition process. We found that for a wide range of concentrations (25 μM to 2.5 mM) and normal laboratory air humidity (RH 45−85%) OTS dissolved in heptane causes the formation of a full-coverage self-assembled monolayer on hydrophilic silicon oxide. The resulting self-assembled layers were studied by atomic force microscopy, ellipsometry, and X-ray reflectometry. Deposition of OTS from dodecane solutions resulted in multilayered films. In contrast, the use of heptane as solvent (in which the solubility of water is at intermediate level between toluene and dodecane) caused the formation of high-quality monolayers. We found consistent and reproducible results for the effect of solvents (dod...

Adhesion of silicon oxide layers on poly(ethylene terephthalate). II: Effect of coating thickness on adhesive and cohesive strengths

Abstract: Reference LTC-ARTICLE-1997-007View record in Web of Science URL: http://www3.interscience.wiley.com/cgi-bin/jhome/36698 Record created on 2006-06-26, modified on 2016-08-08