Silicon oxide

About: Silicon oxide is a research topic. Over the lifetime, 22220 publications have been published within this topic receiving 260986 citations.

Integrated palladium-based micromembranes for hydrogen separation and hydrogenation/dehydrogenation reactions

Abstract: The present invention relates to gas separation membranes including a metal-based layer (17) having sub-micron scale thicknesses. The metal-based layer (17) can be a palladium alloy supported by ceramic layers such as a silicon oxide layer and a silicon nitride layer. By using MEMS, a series of perforations (holes) (11) can be patterned to allow chemical components to access both sides of the metal-based layer. Heaters and temperature sensing devices can also be patterned on the membrane (16). The present invention also relates to a portable power generation system at a chemical microreactor comprising the gas separation membrane. The invention is also directed to a method for fabricating a gas separation membrane. Due to the ability to make chemical microreactors of very small sizes, a series of reactors can be used in combination on a silicon surface to produce an integrated gas membrane device.

Solar cell having doped semiconductor heterojunction contacts

Abstract: A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage

Abstract: A method for treating exposed surfaces of a low k carbon doped silicon oxide dielectric material in order to protect the low k carbon doped silicon oxide dielectric material from damage during removal of photoresist mask materials is described. The process comprises (a) first treating the exposed surfaces of a low k carbon doped silicon oxide dielectric material with a plasma capable of forming a densified layer on and adjacent the exposed surfaces of low k carbon doped silicon oxide dielectric material and (b) then treating the semiconductor wafer with a mild oxidizing agent capable of removing photoresist materials from the semiconductor wafer. These steps will prevent the degradation of the exposed surfaces of a low k carbon doped silicon oxide dielectric material during removal of an etch mask after formation of vias or contact openings in the low k carbon doped silicon oxide dielectric material.

Physical and chemical mechanisms in oxide-based resistance random access memory.

Abstract: In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.